JSM3401

JSM3401 P-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.060Ω@-10V -30V 0.070Ω@-4.5V 3 -4.0A 1.GATE 2.SOURCE 0.100Ω@-2.5V 1 3.DRAIN 2 Equivalent Circuit MARKING General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package A11TF w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w：week code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Value Symbol Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current ID -4.0 Pulsed Drain Current IDM -25 Maximum Power Dissipation PD 1.2 W R θJA 104 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient(t ≤5s) V A ℃ MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static characteristics Drain-source breakdown voltage V -30 BVDSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA Drain-source on-resistance (note a) Forward tranconductance (note a) Gate threshold voltage Diode forward voltage (note a) RDS(on) gFS VGS(th) VSD VGS =-10V, ID =-4.0A 55 60 mΩ VGS =-4.5V, ID =-3.5A 65 70 mΩ VGS =-2.5V, ID =-1.2A 95 100 mΩ VDS =-5V, ID =-4.0A 7 10 VDS =VGS, ID =-250µA -0.6 -1 IS=-1A,VGS=0V S -1.2 V -1.2 V Dynamic characteristics (note b) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance 950 pF 115 pF Crss 75 pF td(on) 7.0 ns VDS =-15V, VGS = 0 V, f =1MHz Switching Characteristics (note b) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr VGS=-10V,VDS=-15V, 3.0 ns td(off) ID =-4.0A ,RGEN=6Ω 30 ns 12 ns tf Notes: a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.These parameters have no way to verify. Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ID- Drain Current (A） PD Power(W) Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) Figure 3 Power Dissipation Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 5 Output Characteristics ID- Drain Current (A) Figure 6 Drain-Source On-Resistance Normalized On-Resistance ID- Drain Current (A) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance 4.0A C Capacitance (pF) TJ-Junction Temperature(℃) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) 4.0A Qg Gate Charge (nC) Figure 11 Gate Charge Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward ID- Drain Current (A) Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° SOT-23 Suggested Pad Layout Dimensions In Inches Min Max 0.035 0.045 0.004 0.000 0.041 0.035 0.020 0.012 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8°