WM02N70M

Document: W0803152, Rev: C WM02N70M M N-Channel MOSFET Features ⚫ ⚫ ⚫ VDS= 20V, ID = 7A RDS(on) < 25mΩ @ VGS = 4.5V RDS(on) < 30mΩ @ VGS = 2.5V High Power and Current Handing Capability ESD Protected Mechanical Characteristics ⚫ ⚫ ⚫ SOT-23 Package Marking : Making Code RoHS Compliant Schematic & PIN Configuration D G D G S S Device symbol SOT-23(Top View) Absolute Maximum Rating Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID 7 A Pulsed Drain Current 1 IDM 24 A Power Dissipation PD 1.3 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 to +150 °C Thermal Resistance from Junction to Ambient 2 RθJA 96 °C/W ©2019 WAYON Corporation www.way-on.com 1 / 4 N Channel MOSFET WM02N70M Electrical Characteristics (Tamb=25°C unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250µA 20 - - V Drain Cut-off Current IDSS VDS = 20V, VGS = 0 V - - 1 µA Gate Leakage Current IGSS VGS = ±10V, VDS = 0 V - - ±10 µA Gate Threshold Voltage3 VGS(th) VGS = VDS, ID = 250µA 0.4 0.62 1.0 V VGS = 4.5V, ID =6A - 14 25 Drain-Source on-State Resistance3 RDS(on) VGS = 2.5V, ID = 4A - 18 30 - 850 - - 140 - mΩ Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 105 - Total Gate Charge4 Qg - 11 - Gate-Source Charge4 Qgs - 2 - Gate-Drain Charge4 Qgd - 3.1 - Turn-on Time4 td(on) - 5.2 - - 14 - - 23 - - 15 - - - 1.2 VGS = 0 V, VDS = 10V, f = 1 MHz pF Switching Characteristics Rise Time4 Turn-off Time4 tr td(off) Fall Time4 VGS = 4.5V, ID = 6A, VDS = 10V VGS= 4.5V, VDD = 10V, RL = 1.5Ω, RGEN= 3Ω, tf nC nS Source-Drain Diode Characteristics Body Diode Voltage VSD VGS = 0V, IS= 1A V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface mounted on FR4 board using 1 square inch pad size,1oz single-side copper. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. 4. Guaranteed by design, not subject to product ©2019 WAYON Corporation www.way-on.com 2 / 4 N Channel MOSFET WM02N70M Typical Characteristics Figure 1. Output Characteristics Figure 3. RDS(on) vs. ID Figure 5. IS vs. VSD ©2019 WAYON Corporation Figure 2. Transfer Characteristics Figure 4. RDS(on) vs. VGS Figure 6. Capacitance Characteristics www.way-on.com 3 / 4 N Channel MOSFET WM02N70M Outline Drawing – SOT-23 PACKAGE OUTLINE D b 3 DIMENSIONS 0.25 E1 E θ 1 SYMBOL c 2 e e1 A b A MIN 0.035 MAX 0.045 A1 0.00 0.10 0.000 0.004 b 0.30 0.50 0.012 0.020 c 0.08 0.15 0.003 0.006 D 2.80 3.00 0.110 0.118 E 2.25 2.55 0.089 0.100 E1 1.20 1.40 0.047 0.055 DIM INCHES MILLIMETERS M 0.080 2.02 C 0.032 0.80 Z 0.111 2.82 e 0.037 BSC 0.95 BSC e1 0.075 BSC 1.90 BSC b 0.032 0.80 M C 0.95 BSC 0.0374 BSC e1 1.80 2.00 0.071 0.079 L 0.45 0.65 0.018 0.026 θ 0 8 0 8 。 。 Notes DIMENSIONS Z INCHES MAX 1.15 e A1 MILLIMETER MIN 0.90 L 1. Dimensioning and tolerances per ANSI Y14.5M, 1985. 2. Controlling Dimension: Inches 3. Pin 3 is the cathode (Unidirectional Only). 4. Dimensions are exclusive of mold flash and metal burrs. e e1 Marking Codes Part Number WM02N70M Marking Code 3416E Package Information Qty：3k/Reel CONTACT INFORMATION No.1001, Shiwan (7) Road, Pudong District, Shanghai, P.R.China.201207 Tel: 86-21-68969993 Fax: 86-21-50757680 Email: market@way-on.com WAYON website: http://www.way-on.com For additional information, please contact your local Sales Representative. ® is registered trademark of Wayon Corporation. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. ©2019 WAYON Corporation www.way-on.com 4 / 4