0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
KY2301H

KY2301H

  • 厂商:

    KY(韩景元)

  • 封装:

    SOT-23

  • 描述:

    类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):3A;功率(Pd):400mW;导通电阻(RDS(on)@Vgs,Id):76mΩ@4.5V,1A;

  • 数据手册
  • 价格&库存
KY2301H 数据手册
ShenZhen HanKingYuan Electronic Co.,Ltd KY2301H -20V P-Channel Mosfet SOT-23 FEATURES ● RDS(ON) ≤ 110mΩ( 76mΩ Typ.) @VGS=-4.5V ● RDS(ON) ≤ 140mΩ( 102mΩ Typ.) @VGS=-2.5V 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS ● Load Switch for Portable ● Devices DC/DC Converter P-CHANNEL MOSFET MARKING MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current -3 A IDM Pulsed Drain Current note1 -12 A PD Power Dissipation W Thermal Resistance, Junction to Ambient (t ≤5s) 0.4 312 ℃/W Junction Temperature 150 ℃ -55 to +150 ℃ RθJA TJ TSTG Storage Temperature Range www.scr-ky.com 1/4 ShenZhen HanKingYuan Electronic Co.,Ltd KY2301H MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Symbol Parameter Test Condition Min. Typ. Max. Units -20 -24.5 - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID= -250μA IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V, - - -1 μA IGSS Gate to Body Leakage Current VDS =0V, VGS = ±8V - - ±100 nA -0.4 -0.6 -1.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS= VGS, ID= -250μA RDS(on) Static Drain-Source on-Resistance VGS =-4.5V, ID =-1A - 76 110 note1 VGS =-2.5V, ID =-1A - 102 140 - 405 - pF - 75 - pF - 55 - pF - - 6 nC - 0.7 - nC - 1.3 - nC - 11 20 ns - 35 60 ns - 30 50 ns - 10 20 ns - -0.75 -1.2 V mΩ Dynamic Characteristics note2 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge Switching Characteristics VDS = -10V, ID = -3A, VGS = -2.5V note2 td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDS =-10V, VGS = 0V, f = 1.0MHz VDD = -10V, ID = -1A, RGEN=1Ω,VGS=-4.5V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings VSD Drain to Source Diode Forward Voltage VGS = 0V, IS = -0.7A Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 2. Guaranteed by design, not subject to production testing. www.scr-ky.com 2/4 ShenZhen HanKingYuan Electronic Co.,Ltd KY2301H TYPICAL PERFORMANCE CHARACTERISTICS www.scr-ky.com 3/4 ShenZhen HanKingYuan Electronic Co.,Ltd KY2301H SOT-23 PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP 1.800 L 2.000 0.071 0.550 REF 0.079 0.022 REF L1 0.300 0.500 0.012 θ 0° 8° 0° www.scr-ky.com 0.100 0.037 TYP 0.020 8° 4/4
KY2301H 价格&库存

很抱歉,暂时无法提供与“KY2301H”相匹配的价格&库存,您可以联系我们找货

免费人工找货