KY3407

ShenZhen HanKingYuan Electronic Co.,Ltd KY3407 -30V P-Channel Mosfet SOT-23 FEATURES ● RDS(ON) ≤ 60mΩ( 48mΩ Typ.) @VGS=-10V ● RDS(ON) ≤ 85mΩ( 62mΩ Typ.) @VGS=-4.5V 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS ● Load Switch ● Power Management MARKING P-CHANNEL MOSFET 3407 3407：Device code MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current -4.1 A IDM Pulsed Drain Current note1 -16.4 A Ptot Total Power Dissipation W Thermal Resistance, Junction to Ambient 1.67 75 ℃/W Junction Temperature 150 ℃ -55 to +150 ℃ RθJA TJ TSTG Storage Temperature Range www.scr-ky.com 1／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3407 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Parameter Symbol bol Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V,ID = -250μA -30 - - V IDSS Zero Gate Voltage Drain Current VDS = -30V, VGS = 0V, TJ = 25℃ - - -1 μA IGSS Gate to Body Leakage Current VGS = ±20V,VDS = 0V - - ±100 nA Gate Threshold Voltage VDS =VGS,ID = -250μA -1.0 -1.4 -2.5 V Static Drain-Source VGS =-10V, ID =-4.1A - 48 60 On-Resistance note2 VGS =-4.5V, ID =-3.5A - 62 85 VDS =-5V, ID = -4.1A 5 - - S - 580 - pF - 98 - pF 74 - pF - 6.8 - nC - 1.0 - nC - 1.4 - nC - 14 - ns - 61 - ns - 19 - ns - 10 - ns On Characteristics VGS(th) RDS(on) gFS Forwar d Transconductance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =-15V, VGS = 0V f = 1.0MHz VDS=-15V, ID=-4.1A, VGS=-10V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VGS = -10V, VDS=-15V RG =2.5Ω, ID=-1A RL =15Ω, Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -4.1 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -16.4 A VSD Drain to Source Diode Forward Voltage - -0.89 -1.2 V VGS = 0V, ISD=-4.1A TJ = 25℃ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2 . Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% www.scr-ky.com 2／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3407 TYPICAL PERFORMANCE CHARACTERISTICS Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 20 -ID (A) -ID (A) 15 -5V -10V -4.5V TJ=25℃ 12 15 -4V 9 10 6 -3.5V 5 -VDS(V) 0 0 1 2 3 4 5 0 -VGS(V) RDS(ON) (mΩ) 1 0 2 3 4 5 6 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 70 TJ=125℃ 3 VGS=-3V 10 -IS(A) 60 VGS= -4.5V 50 TJ=150℃ VGS= -10V 40 30 TJ=-50℃ TJ=-25℃ 1 20 10 0 0 -ID(A) 1 2 3 4 5 6 7 8 0.1 0.0 Figure 5: Gate Charge Characteristics 8 0.2 0.4 -VSD(V) 0.6 0.8 1.0 1.2 1.4 Figure 6: Capacitance Characteristics -VGS(V) 103 VGS=-10V ID=-5.1A C(pF) Ciss 6 4 Coss 102 Crss 2 0 0 Qg(nC) 2 4 www.scr-ky.com 6 8 10 12 101 0 -VDS(V) 10 20 30 40 50 60 3／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3407 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS)(V) 1.3 Figure 8: Normalized on Resistance vs. Junction Temperature RDS(on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area -ID(A) 0.5 -100 1ms 150 200 -ID(A) 3 100ms DC 2 TC=25℃ Single pulse 1 100 4 10ms 0.1 0.1 50 5 100μs 1 0 6 10μs 10 -50 Figure 10: Maximum Continuous Drain Current vs. Case Temperature 7 Limited by RDS(on) Tj (℃) 1 -VDS (V) 10 0 100 0 25 50 Tc (℃) 75 100 125 150 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (SOP-8) 102 ZthJ-C(℃/W) 101 D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC TP(s) PDM 100 10-1 10-2 -4 10 10-3 10-2 www.scr-ky.com 10-1 100 101 102 4／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3407 SOT-23 PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 REF L1 0.300 0.500 0.012 θ 0° 8° 0° www.scr-ky.com 0.079 0.022 REF 0.020 8° 5／5