HY1904D

HY1904D/U/V N-Channel Enhancement Mode MOSFET Feature Description  Pin Description 40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications  Power Management for Inverter Systems N-Channel MOSFET Ordering and Marking Information Package Code D HY1904 YYXXXJWW G U V HY1904 HY1904 YYXXXJWW G YYXXXJWW G D: TO-252-2L Date Code YYXXX WW U: TO-251-3L V:TO-251-3S Assembly Material G:Halogen Free Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hooyi.cc V1.0 1 HY1904D/U/V Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperature 175 °C -55 to 175 °C Tc=25°C 72 A Tc=25°C 288 A Tc=25°C 72 A Tc=100°C 51 A Tc=25°C 62.5 W Tc=100°C 31 W TJ TSTG Storage Temperature Range IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case 2.4 °C/W RJA Thermal Resistance, Junction-to-Ambient ** 110 °C/W EAS Single Pulsed-Avalanche Energy *** 134 mJ * ** *** L=0.3mH Repetitive rating；pulse width limited by max. junction temperature. Surface mounted on FR-4 board. Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY1904 Unit Min Typ. Max 40 - - V - - 1 μA - - 5 μA 3 V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* VGS=0V,IDS=250μA VDS=40V,VGS=0V TJ=55°C Gate Threshold Voltage VDS=VGS, IDS=250μA 1 1.7 Gate-Source Leakage Current VGS=±20V,VDS=0V - - VGS=10V,IDS=36A - 4.8 6.0 VGS=4.5V,IDS=36A - 5.8 7.0 ISD=36A,VGS=0V - 0.83 1.1 V - 53 - ns - 78 - nC Drain-Source On-State Resistance ±100 nA mΩ Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=36A,dISD/dt=100A/μs www.hooyi.cc V1.0 2 HY1904D/U/V Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY1904 Min Typ. Max - 1.6 - - 2164 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance VGS=0V,VDS=0V,F=1 MHz VGS=0V, Coss Output Capacitance VDS=25V, - 202 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 75 - td(ON) Turn-on Delay Time - 23 - Tr Turn-on Rise Time VDD=20V,RG=4Ω, - 28 - td(OFF) Turn-off Delay Time IDS=36A,VGS=10V - 29 - - 34 - - 51.5 - - 5.5 - - 11 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =32V, VGS=10V， ID=36A nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hooyi.cc V1.0 3 HY1904D/U/V Typical Operating Characteristics ID-Drain Current(A) Voltage Figure 2: Drain Current Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Impedance (℃/W) Thermal Normalized Transient Figure 4: Thermal Transient Impedance Zjc Voltage ID-Drain Current(A) Figure 3: Safe Operation Area Tc-Case Temperature(℃) Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) VDS-Drain-Source Voltage (V) Voltage RDS(ON)-ON-Resistance(Ω) Figure 6: Drain-Source On Resistance Voltage ID-Drain Current(A) Figure 5: Output Characteristics ID-Drain Current(A) www.hooyi.cc V1.0 4 HY1904D/U/V Typical Operating Characteristics(Cont.) VGS-Gate-Source Voltage (V) Tj-Junction Temperature(℃) Voltage IS-Source Current (A) Figure 10: Source-Drain Diode Forward Voltage Normalized On-Resistance Figure 9: On-Resistance vs. Temperature Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V) Voltage VDS-Drain-Source Voltage (V) Voltage Figure 12: Gate Charge Characteristics VGS-Gate-Source Voltage (V) Figure 11: Capacitance Characteristics C-Capacitance(pF) Voltage (mΩ) Normalized Threshold Voltage (V) Figure 8: Source-Drain Diode Forward Voltage RDS(ON)-On-Resistance(mΩ) Figure 7: Gate-Source On Resistance Q G-Gate Charge (nC) www.hooyi.cc V1.0 5 HY1904D/U/V Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Gate Charge Test Circuit and Waveforms www.hooyi.cc V1.0 6 HY1904D/U/V Device Per Unit Package Type Unit Quantity TO-252-2L TO-251-3L TO-251-3S Tube Tube Tube 75 75 75 Package Information TO-252-2L www.hooyi.cc V1.0 7 HY1904D/U/V TO-251-3L www.hooyi.cc V1.0 8 HY1904D/U/V TO-251-3S www.hooyi.cc V1.0 9 HY1904D/U/V Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tp to Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hooyi.cc V1.0 10 HY1904D/U/V Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness