KNB2408A

KIA 190A，80V N-CHANNEL MOSFET 2408A SEMICONDUCTORS 1.Description KNX2408A, uses advanced trench technology to provide excellent RDS(ON), Low gate charge,It can be used in a wide variety of applications. 2. Features  VDS=80V,ID=190A RDS(ON)（typ.)=3.7mΩ @ VGS=10V  High density cell design for lower Rdson  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS  Excellent package for good heat dissipation 3. Applications  Power switching application  Hard switched and High frequency circuits  Uninterruptible power supply 4.Symbol 1 of 5 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.0.Apr. 2021 KIA 190A，80V N-CHANNEL MOSFET 2408A SEMICONDUCTORS 5. Ordering Information Part Number Package Brand KNB2408A TO-263 KIA KNP2408A TO-220 KIA KNM2408A TO-247 KIA 6. Absolute maximum ratings Rating Parameter Symbol TO-220 Units TO-247 TO-263 Drain-source voltage VDSS 80 V Gate-source voltage VGSS +20 V TJ 175 ºC TSTG -55 to175 ºC Maximum junction temperature Storage temperature range Continuous drain current TC=25ºC ID 190 A Pulse drain current (Note1) TC=25ºC IDM 760 A Avalanche energy,single pulsed(Note2) L=0.5mH EAS 1.4 J Maximum power dissipation TC=25 ºC PD 270 326 W 7. Thermal characteristics Max TO-220 TO-247 TO-263 Symbol Parameter RθJC Thermal Resistance, Junction-to-Case 2 of 5 0.55 0.46 Unit ºC /W Rev 1.0.Apr. 2021 KIA 190A，80V N-CHANNEL MOSFET 2408A SEMICONDUCTORS 8. Electrical characteristics (TA=25°C,unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units BVDSS VGS=0V,ID=250μA 80 - - V - - 1 μA Off Characteristics Drain-source breakdown voltage VDS=80V, VGS=0V Drain-Source Leakage Current IDSS Gate-Soure Forward Leakage IGSS(F) VGS=+20V - - 100 nA Gate-Soure Reverse Leakage IGSS(R) VGS=-20V - - -100 nA Drain-source on-Resistance(Note3) RDS(on) VGS=10V,ID=40A - 3.7 4.5 mΩ Gate threshold voltage VGS(th) VDS=VGS, ID=250μA 2.0 2.8 4.0 V gfs VDS=5V,ID=15A - 15 - S - 260 - - 75 - - 80 - - 25 - - 21 - - 48 - tf - 18 - Input capacitance Ciss - 13500 - Output capacitance Coss - 950 - Reverse transfer capacitance Crss - 810 - - - 1.3 On Characteristics Forward Transconductance Dynamic Characteristics Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time VDS=64V, VGS=10V ID =80A VDD=40V, ID=40A, RGEN=3Ω, VGS=10V, tr td(off) nC ns Switching Characteristics (Note 4) VDS=25V,VGS=0V, f=1MHz pF Drain-Source Diode Characteristics Diode Forward voltage VSD VGS=0V,IS=40A Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition :T j=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production. 3 of 5 Rev 1.0.Apr. 2021 V KIA 190A，80V N-CHANNEL MOSFET 2408A SEMICONDUCTORS 9. Test circuits 4 of 5 Rev 1.0.Apr. 2021 KIA 190A，80V N-CHANNEL MOSFET 2408A SEMICONDUCTORS 5 of 5 Rev 1.0.Apr. 2021