KNB3610A

KIA 60A，100V N-CHANNEL MOSFET 3610A SEMICONDUCTORS 1.Description KNX3610A, uses advanced trench technology to provide excellent RDS(ON), Low gate charge,It can be used in a wide variety of applications. 2. Features  VDS=100V,ID=60A RDS(ON)（typ.)=17mΩ @ VGS=10V  High density cell design for lower Rdson  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS  Excellent package for good heat dissipation 3. Applications  Power switching application  Hard switched and High frequency circuits  Uninterruptible power supply 4.Symbol http://www.kiaic.com/ 1 of 5 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.0.Apr. 2021 KIA 60A，100V N-CHANNEL MOSFET 3610A SEMICONDUCTORS 5. Ordering Information Part Number Package Brand KNB3610A TO-263 KIA KNP3610A TO-220 KIA 6. Absolute maximum ratings Parameter Symbol Rating Units Drain-source voltage VDS 100 V Gate-source voltage VGS +20 V Continuous drain curren ID 60 Pulsed drain current (Note1) IDM 240 A A Single pulse avalanche energy(Note2) EAS 250 mJ Derating Factor above 25ºC PD 160 W/ºC TJ, TSTG -55 to175 ºC Operation junction and temperature range 7. Thermal characteristics Symbol RθJC http://www.kiaic.com/ Parameter Thermal Resistance, Junction-to-Case 2 of 5 Max 0.93 Unit ºC /W Rev 1.0.Apr. 2021 KIA 60A，100V N-CHANNEL MOSFET 3610A SEMICONDUCTORS 8. Electrical characteristics (TA=25°C,unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units BVDSS VGS=0V,ID=250μA 100 - - V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V - - 1 μA Gate-Soure Forward Leakage IGSS(F) VGS=+20V - - 100 nA Gate-Soure Reverse Leakage IGSS(R) VGS=-20V - - -100 nA Drain-source on-Resistance(Note3) RDS(on) VGS=10V,ID=20A - 17 20 mΩ Gate threshold voltage VGS(th) VDS=VGS, ID=250μA 2.0 3.0 4.0 V gfs VDS=5V,ID=20A - 20 - S - 82 - - 24 - - 28 - - 13 - - 10 - - 21 - - 18 - - 3830 - - 235 - - 208 - - - 1.2 Off Characteristics Drain-source breakdown voltage On Characteristics Forward Transconductance Dynamic Characteristics Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time VDD=80V, VGS=10V ID =30A VDD=50V, ID=30A, RGEN=3Ω, VGS=10V, tr td(off) tf nC ns Switching Characteristics (Note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS=25V,VGS=0V, f=1MHz pF Drain-Source Diode Characteristics Diode Forward voltage VSD VGS=0V,IS=20A Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition :T j=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production. 9. Test circuits http://www.kiaic.com/ 3 of 5 Rev 1.0.Apr. 2021 V KIA 60A，100V N-CHANNEL MOSFET 3610A SEMICONDUCTORS Figure 1 Output Characteristics Figure 2 Transfer Characteristics Figure 3 On-Resistance vs. ID and VGS Figure 4 On-Resistance vs. Junction Temperature Figure 5 On-Resistance vs. VGS Figure 6 Body Diode Forward Voltage http://www.kiaic.com/ 4 of 5 Rev 1.0.Apr. 2021 KIA 60A，100V N-CHANNEL MOSFET 3610A SEMICONDUCTORS Figure 8 Capacitance Characteristics Figure 7 Gate-Charge Characteristics Figure 9 Maximum Forward Figure 10 Single Pulse Power Biased Safe Operation Area Rating Junction-to-Ambient Figure 11 http://www.kiaic.com/ Normalized Maximum Transient Thermal Impedance 5 of 5 Rev 1.0.Apr. 2021