VBL1203M

VBL1203M www.VBsemi.com Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC 200 RDS(on) () VGS = 10 V 0.30 Qg (Max.) (nC) 43 Qgs (nC) 7.0 Qgd (nC) 23 Single Configuration D D2PAK (TO-263) K G D S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage PARAMETER VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM UNIT V 10 6.7 A 36 Linear Derating Factor 0.59 Linear Derating Factor (PCB Mount)e 0.025 W/°C Single Pulse Avalanche Energyb EAS 250 mJ Repetitive Avalanche Currenta IAR 9.0 A EAR 7.4 mJ Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C Maximum Power Dissipation (PCB Mount)e TA = 25 °C PD 74 3.0 W * Pb containing terminations are not RoHS compliant, exemptions may apply Peak Diode Recovery dV/dtc 服务热线：400-655-8788 dV/dt 5.0 V/ns 1 VBL1203M www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT TJ, Tstg - 55 to + 150 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) UNIT °C 300d for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12). c. ISD  9.0 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). . THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)c RthJA - - 40 Maximum Junction-to-Ambient RthJA - - 62 Maximum Junction-to-Case (Drain) RthJC - - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. VDS TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VGS = 0, ID = 250 μA 200 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.24 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 VDS = 160V, VGS = 0 V, TJ = 125 °C - - 250 - 0.30 -  3.8 - - S - 800 - - 240 - - 76 - - - 43 VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 5.4 Ab VGS = 10 V VDS = 50 V, ID = 5.4 Ab μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 5.9 A, VDS = 160 V see fig. 6 and 13b VDD = 100 V, ID = 5.9 A Rg = 12 , RD= 16  see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D - - 7.0 - - 23 - 9.4 - - 28 - - 39 - - 20 - - 4.5 - - 7.5 - pF nC ns nH G S 服务热线：400-655-8788 2 VBL1203M www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - - 9.0 UNIT Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward IS Currenta ISM MOSFET symbol showing the integral reverse p - n junction diode D A G S - - 36 VSD TJ = 25 °C, IS = 9.0 A, VGS = 0 Vb - - 2.0 V Body Diode Reverse Recovery Time trr - 170 340 ns Body Diode Reverse Recovery Charge Qrr TJ = 25 °C, IF = 5.9 A, dI/dt = 100 A/μsb - 1.1 2.2 μC Forward Turn-On Time ton Body Diode Voltage Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 or G-10 material). TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 100 4.5 V 91032_01 101 100 Fig. 1 - Typical Output Characteristics, TC = 25 °C 服务热线：400-655-8788 10-1 10-1 101 VDS, Drain-to-Source Voltage (V) 4.5 V 100 20 µs Pulse Width TC = 25 °C 10-1 10-1 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top ID, Drain Current (A) ID, Drain Current (A) Top 91032_02 20 µs Pulse Width TC = 150 °C 100 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C 3 VBL1203M www.VBsemi.com 1600 Capacitance (pF) ID, Drain Current (A) 101 150 °C 25 °C 100 1200 Ciss 800 Coss 400 4 5 6 7 8 9 0 100 10 VGS, Gate-to-Source Voltage (V) 91032_03 Crss 20 µs Pulse Width VDS = 50 V 10-1 2.5 20 ID = 5.9 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 91032_04 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (V) RDS(on), Drain-to-Source On Resistance (Normalized) 3.0 101 VDS, Drain-to-Source Voltage (V) 91032_05 Fig. 3 - Typical Transfer Characteristics ID = 5.9 A VDS = 160 V 16 VDS = 100 V VDS = 40 V 12 8 4 For test circuit see figure 13 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature 4 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 0 91032_06 10 20 30 40 50 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 服务热线：400-655-8788 VBL1203M www.VBsemi.com ISD, Reverse Drain Current (A) 10 ID, Drain Current (A) 101 150 °C 25 °C 100 8 6 4 2 VGS = 0 V 0.5 0.7 0.9 VSD, Source-to-Drain Voltage (V) 91032_07 0 1.5 1.3 1.1 25 50 VGS 5 150 RD D.U.T. Rg Operation in this area limited by RDS(on) 125 Fig. 9 - Maximum Drain Current vs. Case Temperature VDS 103 100 TC, Case Temperature (°C) 91032_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage 75 + - VDD ID, Drain Current (A) 2 10 V 102 5 10 µs 2 10 100 µs Fig. 10a - Switching Time Test Circuit 5 1 ms 2 10 ms 1 5 VDS TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 0.1 91032_08 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 2 5 1 2 5 10 2 90 % 5 102 2 5 103 2 5 VDS, Drain-to-Source Voltage (V) 104 10 % VGS td(on) Fig. 8 - Maximum Safe Operating Area tr td(off) tf Fig. 10b - Switching Time Waveforms 服务热线：400-655-8788 5 VBL1203M www.VBsemi.com Thermal Response (ZthJC) 10 1 0 − 0.5 0.2 PDM 0.1 0.05 0.1 t1 0.02 0.01 t2 Single Pulse (Thermal Response) Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) 91032_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD Rg D.U.T. + - IAS V DD VDS 10 V tp 0.01 Ω IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 600 ID 4.0 A 5.7 A Bottom 9.0 A Top 500 400 300 200 100 0 VDD = 50 V 25 91032_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current 服务热线：400-655-8788 6 VBL1203M www.VBsemi.com Current regulator Same type as D.U.T. 50 kΩ QG 10 V 0.2 µF 12 V 0.3 µF QGS + QGD D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Fig. 13a - Basic Gate Charge Waveform Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel 服务热线：400-655-8788 7 VBL1203M www.VBsemi.com TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L2 B A1 L4 Detail “A” Rotated 90° CW scale 8:1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. 4 E1 Section B - B and C - C Scale: none View A - A MILLIMETERS INCHES MIN. MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 服务热线：400-655-8788 8 VBL1203M www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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