VBL1105

VBL1105 www.VBsemi.com N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.004 at VGS = 10 V 140a • TrenchFET® Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 125 °C Pulsed Drain Current ID IDM Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25 °C Maximum Power Dissipationb TA = 25 °C Operating Junction and Storage Temperature Range V 140a 87a 440 IAR 75 EAR 280 PD Unit 375c 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount (TO-263)d Junction-to-Case (Drain) °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). 服务热线：400-655-8788 1 VBL1105 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. VDS VDS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 100 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 ID(on) RDS(on) VDS ≥ 5 V, VGS = 10 V 120 0.004 VGS = 10 V, ID = 30 A, TJ = 125 °C 0.017 gfs VDS = 15 V, ID = 30 A V nA µA A VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea 4 Ω 0.025 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 280 Total Gate Chargec Qg 110 c Gate-Source Charge Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 5500 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 85 A td(off) 160 24 1.0 VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 °C Continuous Current pF nC 24 td(on) tr 750 6.2 20 30 125 200 55 85 130 195 IS 140 ISM 240 Forward Voltagea VSD Peak Reverse Recovery Charge Reverse Recovery Charge IF = 85 A, VGS = 0 V trr IRM(REC) Qrr ns b Pulsed Current Reverse Recovery Time Ω IF = 50 A, dI/dt = 100 A/µs A 1.0 1.5 V 70 140 ns 5.5 10 A 0.19 0.35 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 VBL1105 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 250 6V VGS = 10 V thru 7 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 150 100 5V 150 100 TC = 125 °C 50 50 - 55 °C 25 °C 4V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage Transfer Characteristics Output Characteristics 0.015 250 R D S(on) - On-Resistance (Ω) 200 25 °C 150 125 °C 100 g fs - Transconductance (S) TC = - 55 °C 50 0.012 0.009 VGS = 10 V 0.006 0.003 0.000 0 0 20 60 40 80 100 0 120 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 120 20 10 000 VG S - Gate-to-Source Voltage (V) VDS = 50 V ID = 85 A C - Capacitance (pF) 8000 Ciss 6000 4000 2000 16 12 8 4 Coss Crss 0 0 0 25 50 75 100 0 50 100 150 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 200 服务热线：400-655-8788 3 VBL1105 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 100 V GS = 10 V ID = 30 A I S - Source Current (A) 2.0 (Normalized) R DS(on) - On-Resistance 2.5 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0.3 0 T J - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 125 120 ID = 10 mA 100 115 V(BR)DSS (V) I Dav (A) IAV (A) at T A = 25 °C 10 IAV (A) at T A = 150 °C 110 105 100 1 95 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time 1 90 - 50 - 25 0 25 50 75 100 125 150 175 T J - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 服务热线：400-655-8788 4 VBL1105 www.VBsemi.com THERMAL RATINGS 1000 120 10 µs 100 I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 100 µs Limited by R DS(on)* 10 1 ms 10 ms 100 ms, DC 1 TC = 25 °C Single Pulse 20 0 0 50 25 75 100 125 150 175 0.1 0.1 TC - Ambient Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 VBL1105 www.VBsemi.com TO-263AB (HIGH VOLTAGE) A (Datum A) 3 4 L1 A 4 E A B c2 H Gauge plane 4 0° to 8° D 1 L2 B 2 C 3 C H 5 B Detail A Seating plane L L3 A1 L4 Detail “A” Rotated 90° CW scale 8:1 B A 2 x b2 c 2xb 0.010 M A M B E ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. 4 E1 Section B - B and C - C Scale: none View A - A INCHES MILLIMETERS MAX. MIN. MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-2018. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 服务热线：400-655-8788 6 VBL1105 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 (16.129) 0.635 (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 VBL1105 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.