VBL1101M

VBL1101M www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.100 at VGS = 10 V • • • • ID (A) 20 TrenchFET® Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested RoHS COMPLIANT APPLICATIONS • Isolated DC/DC Converters D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Parameter Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C IDM Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy ID b Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 25 °C d Operating Junction and Storage Temperature Range V 20 16 70 IAS 20 EAS 200 PD Unit 105 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) PCB Mount (TO-263)d RthJA 40 RthJC 0.4 °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). 服务热线：400-655-8788 1 VBL1101M www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS ± 100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) rDS(on) 120 0.100 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.110 gfs VDS = 15 V, ID = 20 A V nA µA A VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 175 °C Forward Transconductancea 3 Ω 0.120 S 25 b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Time 950 VGS = 0 V, VDS = 25 V, f = 1 MHz Fall Timec pF 110 28 VDS = 100 V, VGS = 10 V, ID = 65 A td(off) 4.8 1.7 3.3 VDD = 100 V, RL = 1.5 Ω ID ≅ 65 A, VGEN = 10 V, Rg = 2.5 Ω tf 120 ns 25 50 °Cb IS 65 Pulsed Current ISM 140 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 65 A, VGS = 0 V trr IRM(REC) Qrr Ω 8 Source-Drain Diode Ratings and Characteristics TC = 25 Continuous Current nC 15 0.5 td(on) tr c 280 IF = 50 A, di/dt = 100 A/µs A 1.0 1.5 V 130 200 ns 8 12 A 0.52 1.2 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 VBL1101M www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 140 VGS = 10 thr u6 V 5V 120 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 20 3V 10 100 80 60 TC = 125 °C 40 25 °C 20 - 55 °C 2V 0 0 0 2 4 6 10 8 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 180 0.040 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 150 25 °C 120 125 °C 90 60 0.030 0.020 VGS = 10 V 0.010 30 0.000 0 0 20 40 60 80 100 0 120 20 40 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 1400 20 VGS - Gate-to-Source Voltage (V) 1200 Ciss C - Capacitance (pF) 60 1000 800 600 400 Crss 200 VDS = 100 V ID = 65 A 16 12 8 4 Coss 0 0 0 20 40 60 80 100 120 0 25 50 75 100 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 125 150 服务热线：400-655-8788 3 VBL1101M www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 100 VGS = 10 V ID = 20 A I S - Source Current (A) 2.0 (Normalized) rDS(on) - On-Resistance 2.5 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 240 230 ID = 1.0 mA 100 V(BR)DSS (V) I Dav (A) 220 IAV (A) at TA = 25 °C 10 210 200 1 190 IAV (A) at TA = 150 °C 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time 1 180 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 服务热线：400-655-8788 4 VBL1101M www.VBsemi.com THERMAL RATINGS 1000 75 rDS(on) Limited* 60 10 µs I D - Drain Current (A) I D - Drain Current (A) 100 45 30 100 µs 10 1 15 0 25 0 50 75 100 125 150 0.1 0.1 175 TC = 25 °C Single Pulse 1 10 1 ms 10 ms 100 ms DC 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which rDS(on) is specified TC - Ambient Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 VBL1101M www.VBsemi.com TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. 4 E1 Section B - B and C - C Scale: none View A - A MILLIMETERS INCHES MAX. MIN. MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 2.54 BSC 0.25 BSC 4.78 5.28 0.100 BSC 0.070 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 6 服务热线：400-655-8788 VBL1101M www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.635 (9.017) (16.129) 0.355 (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 VBL1101M www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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