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SLM2003ECA-DG

SLM2003ECA-DG

  • 厂商:

    SILLUMIN(数明半导体)

  • 封装:

    SOIC-8

  • 描述:

    驱动配置:半桥;负载类型:MOSFET;IGBT;是否隔离:非隔离;电源电压:10V~20V;峰值灌电流:-;峰值拉电流:-;特性:-;

  • 数据手册
  • 价格&库存
SLM2003ECA-DG 数据手册
Preliminary Datasheet SLM2003E 200V Half-Bridge Driver PRODUCT SUMMARY      VOFFSET IO+/- (min.) VOUT ton/off (typ.) Deadtime (typ.) FEATURES  200 V max. 130mA/270mA 10 V - 18 V 125 ns/125 ns 500 ns        Floating channel designed for bootstrap operation Fully operational to +200 V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 18 V Under-voltage lockout 3.3 V, 5 V logic compatible Cross-conduction prevention logic Matched propagation delay for both channels Internal set deadtime High-side output in phase with HIN input    Low-side output out of phase with LIN input RoHS compliant SOP8 package   GENERAL DESCRIPTION The SLM2003E is a high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET in the high-side configuration which operates up to 200 V. TYPICAL APPLICATION CIRCUIT up to 200V VCC VCC VB HIN HIN HO LIN LIN VS COM LO to load SLM2003E (Refer to Pin Configuration for correct configuration. This diagram shows electrical connections only.) Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2 May 2022 1 Preliminary Datasheet SLM2003E Table of Contents Product Summary .......................................................................................................................................................1 General Description ....................................................................................................................................................1 Features ......................................................................................................................................................................1 Typical Application Circuit ...........................................................................................................................................1 PIN Configuration........................................................................................................................................................3 PIN Description ...........................................................................................................................................................3 Ordering Information ...................................................................................................................................................3 Functional Block Diagram ...........................................................................................................................................4 Absolute Maximum Ratings ........................................................................................................................................5 Recommended Operation Conditions ........................................................................................................................5 Dynamic Electrical Characteristics ..............................................................................................................................6 Static Electrical Characteristics ...................................................................................................................................6 Package Case Outlines ..............................................................................................................................................8 Revision History ..........................................................................................................................................................9 Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2 May 2022 2 Preliminary Datasheet SLM2003E PIN CONFIGURATION Package Pin Configuration (Top View) 1 VCC VB 8 2 HIN HO 7 3 LIN VS 6 4 COM LO 5 SOP8 PIN DESCRIPTION No. Pin Description 1 VCC Low-side and logic fixed supply 2 HIN Logic input for high-side gate driver output (HO), in phase 3 Logic input for low-side gate driver output (LO), out of phase 4 LIN COM 5 LO Low-side gate drive output 6 VS High-side floating supply return 7 HO High-side gate drive output 8 VB High-side floating supply Low-side return ORDERING INFORMATION Industrial Range: -40°C to +125°C Order Part No. Package QTY SLM2003ECA-DG SOP8, Pb-Free 2500/Reel Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2 May 2022 3 Preliminary Datasheet SLM2003E FUNCTIONAL BLOCK DIAGRAM VB UV DETECT R Pulse Filter HIN S Pulse Gen VCC Dead time & Shoot-Through Prevention R Q HO VS VCC UVLO VCC LO LIN COM Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2 May 2022 4 Preliminary Datasheet SLM2003E ABSOLUTE MAXIMUM RATINGS Symbol Definition Min. Max. -0.3 220 Units VB High-side floating absolute voltage VS High-side floating supply offset voltage VB - 20 VB + 0.3 VHO High-side floating output voltage VS - 0.3 VB + 0.3 VCC Low-side and logic fixed supply voltage -0.3 20 VLO Low-side output voltage -0.3 VCC + 0.3 VIN Logic input voltage (HIN & LIN ) -0.3 10 Allowable offset supply voltage transient --- 50 V/ns PD Package power dissipation at TA ≤ +25°C --- 0.625 W θJA Thermal resistance, junction to ambient --- 200 °C/W TJ Junction temperature --- 150 TS Storage temperature -55 150 TL Lead temperature (soldering, 10 seconds) --- 300 dVS/dt V °C Note: Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. RECOMMENDED OPERATION CONDITIONS Symbol Definition Min. Max. VS + 10 VS + 18 VB High-side floating absolute voltage VS High-side floating supply offset voltage VHO High-side floating output voltage VS VB VCC Low-side and logic fixed supply voltage 10 18 VLO Low-side output voltage 0 VCC VIN Logic input voltage (HIN & LIN ) 0 10 TA Ambient temperature - 40 125 Units 200 V °C Note: For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at a 15 V differential. Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2 May 2022 5 Preliminary Datasheet SLM2003E DYNAMIC ELECTRICAL CHARACTERISTICS VBIAS (VCC, VBS) = 15 V, CL = 1000 pF and TA = 25°C unless otherwise specified. Symbol Parameter Condition Min. Typ. Max. ton Turn-on propagation delay VS = 0 V --- 125 200 toff Turn-off propagation delay VS = 0 V --- 125 200 tr Turn-on rise time --- 70 100 tf Turn-off fall time --- 25 40 DT Deadtime, LS turn-off to HS turn-on & HS turn-on to LS turn-off --- 500 --- MT Delay matching, HS & LS turn-on/off --- --- 60 Unit ns Note: See timing diagram in Figure 1, Figure 2,Figure 3 and Figure 4. STATIC ELECTRICAL CHARACTERISTICS VBIAS (VCC, VBS) = 15 V and TA = 25°C unless otherwise specified. The VIN, VTH, and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol Parameter VIH Logic “1” (HIN) & Logic “0” ( LIN ) input voltage VIL VOH Condition Min. Typ. Max. 2.5 --- --- Logic “0” (HIN) & Logic “1” ( LIN ) input voltage --- --- 0.8 High level output voltage, VBIAS - VO --- 0.4 0.6 --- 0.13 0.2 --- --- 50 --- 105 160 --- 245 390 Unit VCC = 10 V to 18V V IO = 20 mA VOL Low level output voltage, VO ILK Offset supply leakage current IQBS Quiescent VBS supply current VB = VS = 200 V Vo = 0 V IQCC Quiescent VCC supply current Logic “1” input bias current on HIN HIN = 5 V --- 100 150 Logic “1” input bias current on LIN LIN = 0 V --- --- 80 Logic “0” input bias current on HIN HIN = 0 V --- --- 5 Logic “0” input bias current on LIN LIN = 5 V --- --- -80 8 8.6 9.5 µA IIN+ IIN- VCCUV+ VCC supply under-voltage positive going threshold Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2 May 2022 V 6 Preliminary Datasheet SLM2003E Symbol Parameter Condition Min. Typ. Max. 7.6 8.2 9 VCCUV- VCC supply under-voltage going threshold negative VBSUV+ VBS supply under-voltage positive going threshold 8.6 VBSUV- VBS supply under-voltage going threshold 7.9 negative Unit VO = 0 V, VIN = VIH IO+ Output high short circuit pulsed current 130 PW ≤ 10 µs 290 mA VO = 15 V, VIN = VIL IO- Output low short circuit pulsed current 270 PW ≤ 10 µs HIN 600 50% 50% HIN LIN tr ton tf toff HO 90% HO 90% 10% 10% LO Figure 1. Input/Output Timing Diagram HIN Figure 2. High Side Switching Time Waveform LIN 50% 50% 50% 50% LIN 90% ton HO DT LO tr tf toff 10% DT 90% 90% 90% LO 10% 10% 10% Figure 3. Dead Time Waveform Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2 May 2022 Figure 4. Low Side Switching Time Waveform 7 Preliminary Datasheet SLM2003E PACKAGE CASE OUTLINES Figure 5. SOP8 Outline Dimensions Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2 May 2022 8 Preliminary Datasheet SLM2003E REVISION HISTORY Note: page numbers for previous revisions may differ from page numbers in current version Page or Item Subjects (major changes since previous revision) Rev 0.1 preliminary datasheet 2021-10-29 Whole document Rev 0.1 preliminary datasheet release Rev 0.2 preliminary datasheet 2022-05-09 Whole document Rev 0.2 preliminary datasheet release Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2 May 2022 9
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