OSG60R099KSZF

  OSG60R099KSZF  Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor. Features y Low RDS(ON) & FOM y Extremely low switching loss y Excellent stability and uniformity y Ultra-fast and robust body diode Applications PC power y y Telecom power y Server power y EV Charger y Motor driver Key Performance Parameters Parameter Value Unit VDS, min @ Tj(max) 650 V ID, pulse 108 A RDS(ON), max @ VGS=10V 99 mΩ 66.8 nC Product Name Package Marking OSG60R099KSZF TO263 OSG60R099KSZ Qg Marking Information Package & Pin Information Oriental Semiconductor © Copyright Reserved V2.0 Page.1   OSG60R099KSZF  Enhancement Mode N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Value Unit Drain-source voltage VDS 600 V Gate-source voltage VGS ±30 V Continuous drain current1), TC=25 °C 36 ID Continuous drain current1), TC=100 °C Pulsed drain current2), TC=25 °C 22.8 A ID, pulse 108 A IS 36 A IS, pulse 108 A Power dissipation3), TC=25 °C PD 278 W Single pulsed avalanche energy5) EAS 1000 mJ MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 50 V/ns Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 50 V/ns Tstg, Tj -55 to 150 °C Symbol Value Unit Thermal resistance, junction-case RθJC 0.45 °C/W Thermal resistance, junction-ambient4) RθJA 62 °C/W Continuous diode forward current1), TC=25 °C Diode pulsed current2), TC=25 °C Operation and storage temperature Thermal Characteristics Parameter  Electrical Characteristics at Tj=25°C unless otherwise specified Parameter Symbol Drain-source breakdown voltage BVDSS Gate threshold voltage VGS(th) Drain-source onstate resistance RDS(ON) Gate-source leakage current IGSS Drain-source leakage current IDSS Gate resistance RG Min. Typ. Max. Unit 600 VGS=0 V, ID=1 mA 650 3.0 4.5 0.082 Oriental Semiconductor © Copyright Reserved V2.0 Test condition VGS=0 V, ID=1 mA,  Tj=150°C V VDS=VGS, ID=1 mA 0.099 VGS=10 V, ID=18 A Ω 0.20 100 -100 10 8 V nA VGS=10 V, ID=18 A,  Tj=150°C VGS=30 V VGS=-30 V μA VDS=600 V, VGS=0 V Ω ƒ=1 MHzͫOpen drain Page.2   OSG60R099KSZF  Enhancement Mode N-Channel Power MOSFET Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Input capacitance Ciss 3917.5 pF Output capacitance Coss 203.3 pF Reverse transfer capacitance Crss 9.0 pF Turn-on delay time td(on) 48.3 ns tr 77.0 ns td(off) 90.9 ns tf 4.6 ns Rise time Turn-off delay time Fall time Test condition VGS=0 V, VDS=50 V, ƒ=100 KHz VGS=10 V, VDS=400 V, RG=2 Ω, ID=20 A Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 66.8 nC Gate-source charge Qgs 16.6 nC Gate-drain charge Qgd 28.7 nC Vplateau 6.7 V Gate plateau voltage Test condition VGS=10 V, VDS=400 V, ID=20 A Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit 1.4 V Diode forward voltage VSD Reverse recovery time trr 146.5 ns Reverse recovery charge Qrr 1.0 uC Peak reverse recovery current Irrm 12.8 A Test condition IS=36 A, VGS=0 V IS=20 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. 5) VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C. Oriental Semiconductor © Copyright Reserved V2.0 Page.3   OSG60R099KSZF  Enhancement Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 100 20 ID, Drain current(A) ID, Drain current (A) 15 VDS= 10 V Tj = 25 ȭ Tj = 25 ȭ 10 V 7V 6.5 V 6V 10 10 1 0.1 5 5.5 V 0.01 VGS= 5 V 0 0 2 4 6 8 10 0 1 VDS, Drain-source voltage (V) Figure 1. Typ. output characteristics 4 5 6 7 10.0 VGS, Gate-source voltage(V) f = 100 kHz VGS = 0 V 10,000 C, Capacitance (pF) 3 Figure 2. Typ. transfer characteristics 100,000 Ciss 1,000 Coss 100 10 ID = 18 A VDS = 400 V 7.5 5.0 2.5 Crss 1 0 20 40 60 80 0.0 100 0 20 40 60 80 Qg, Gate charge(nC) VDS, Drain-source voltage (V) Figure 3. Typ. capacitances Figure 4. Typ. gate charge 0.25 800 ID = 1 mA VGS = 0 V RDS(ON), On-resistance(:) BVDSS, Drain-source breakdown voltage (V) 2 VGS, Gate-source voltage(V) 760 720 680 0.20 ID = 18 A VGS = 10 V 0.15 0.10 0.05 0.00 640 -50 0 50 100 150 Tj, Junction temperature (ȭ ) -50 0 50 100 150 Tj, Junction Temperature (ȭ ) Figure 5. Drain-source breakdown voltage Figure 6. Drain-source on-state resistance Oriental Semiconductor © Copyright Reserved V2.0 Page.4   OSG60R099KSZF  Enhancement Mode N-Channel Power MOSFET  100 /*#S' Tj = 25 ȭ  IS, Source current (A)