VSP004N10MS-G

VSP004N10MS-G 100V/135A N-Channel Advanced Power MOSFET Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology V DS 100 V R DS(on),TYP@ VGS=10 V 3.8 mΩ R DS(on),TYP@ VGS=4.5 V 5.7 mΩ ID 135 A PDFN5060X  100% Avalanche test  Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSP004N10MS-G PDFN5060X 004N10MG 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 100 V VGS Gate-Source voltage ±20 V IS Diode continuous forward current TC = 25°C 135 A ID Continuous drain current @VGS=10V TC = 25°C 135 A TC = 100°C 85 A IDM Pulse drain current tested ① TC = 25°C 540 A IDSM Continuous drain current @VGS=10V TA = 25°C 25 A TA = 70°C 20 A EAS Avalanche energy, single pulsed ② 121 mJ TC = 25°C 125 W TC = 100°C 50 W TA = 25°C 4 W TA = 70°C 2.7 W -55 to 150 °C Typical Unit PD PDSM TSTG,TJ Maximum power dissipation Maximum power dissipation ③ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case 1 °C/W RθJA Thermal Resistance, Junction-to-Ambient 30 °C/W Copyright Vergiga Semiconductor Co., Ltd Rev C – MAR, 2022 www.vgsemi.com VSP004N10MS-G 100V/135A N-Channel Advanced Power MOSFET Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=100V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=100V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.4 1.9 2.4 V -- 3.8 5 mΩ RDS(on) Drain-Source On-State Resistance ④ -- 5 -- mΩ -- 5.7 7.5 mΩ 3600 4240 4880 pF 1360 1600 1840 pF 25 35 45 pF -- 1.3 -- Ω -- 56 -- nC IDSS VGS=10V, ID=40A RDS(on) Drain-Source On-State Resistance ④ (Tj=100℃) VGS=4.5V, ID=30A Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance VDS=30V,VGS=0V, Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VDS=50V,ID=50A, -- 26 -- nC Qgs Gate-Source Charge VGS=10V -- 14 -- nC Qgd Gate-Drain Charge -- 6.8 -- nC -- 13 -- ns f=1MHz f=1MHz Switching Characteristics Td(on) Turn-on Delay Time VDD=50V, Tr Turn-on Rise Time ID=50A, -- 45 -- ns Td(off) Turn-Off Delay Time RG=3Ω, -- 39 -- ns -- 42 -- ns VGS=10V Tf Turn-Off Fall Time Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=40A,VGS=0V -- 0.8 1.2 V Trr Reverse Recovery Time Isd=50A, VGS=0V -- 50 -- ns Qrr Reverse Recovery Charge di/dt=100A/μs -- 53 -- nC NOTE: ① Repetitive rating; pulse width limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 22A, VGS =10V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse width ≤ 380μs; duty cycle≤ 2%. Copyright Vergiga Semiconductor Co., Ltd Rev C – MAR, 2022 www.vgsemi.com VSP004N10MS-G 100V/135A N-Channel Advanced Power MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Normalized On Resistance ID, Drain-Source Current (A) Fig1. Typical Output Characteristics Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vergiga Semiconductor Co., Ltd Rev C – MAR, 2022 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VSP004N10MS-G 100V/135A N-Channel Advanced Power MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZθJC Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg - Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms Copyright Vergiga Semiconductor Co., Ltd Rev C – MAR, 2022 Fig11. Switching Time Test Circuit and waveforms www.vgsemi.com VSP004N10MS-G 100V/135A N-Channel Advanced Power MOSFET Marking Information Vs 004N10MG XXXYWW 1st line： 2nd line： 3rd line： ， Vergiga Logo Vergiga Code（Vs） Part Number（004N10MG） Date code （XXXYWW） XXX： Wafer Lot Number Code, code changed with Lot Number Y： Year Code , refer to table below WW： Week Code (01 to 53) Code C D E F G H J K L M N P Q R S T Year 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Copyright Vergiga Semiconductor Co., Ltd Rev C – MAR, 2022 www.vgsemi.com VSP004N10MS-G 100V/135A N-Channel Advanced Power MOSFET PDFN5060X Package Outline Data Symbol DIMENSIONS ( unit : mm ) Min Typ Max A 1.00 1.10 1.20 A1 0.00 -- 0.05 b 0.30 0.40 0.50 c 0.20 0.25 0.30 D1 5.00 5.20 5.40 D2 3.80 4.10 4.25 E 5.95 6.15 6.35 E1 5.66 5.86 6.06 E2 3.52 3.72 3.92 e 1.27 BSC H 0.40 0.50 0.60 K 1.10 -- -- L 0.50 0.60 0.70 L1 0.08 0.15 0.22 α 0° -- 12° Copyright Vergiga Semiconductor Co., Ltd Rev C – MAR, 2022 Notes: 1. Refer to JEDEC MO-240 variation AA. 2. Dimensions "D1" and "E1" do NOT include mold flash protrusions or gate burrs. 3. Dimensions "D1" and "E1" include interterminal flash or protrusion. Interterminal flash or protrusion shall not exceed 0.25mm per side. Customer Service Sales and Service: sales@vgsemi.com Vergiga Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com www.vgsemi.com