PNMT60V02E

PNMT60V02E N-Channel MOSFET Description PNMT60V02E is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） MOSFET Product Summary VDS(V) RDS(on)(Ω) VGS(th)(V) ID(A) 60 7.5@ VGS=10V 0.5 to 1.5 0.18 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage VDSS ID =10μA,VGS=0V 60 - - V Zero Gate Voltage Drain Current IDSS VDS =40V,VGS=0V - - 0.5 μA Gate-Body Leakage Current IGSS VDS =0V,VGS=±20V - - ±10 μA Gate Threshold Voltage VGS(th) VDS =VGS, ID =250μA 0.5 - 1.5 V Static Drain-Source On-Resistance RDS(ON) VGS=5V, ID =0.05A - - 7.5 Ω VGS=10V, ID =0.1A - - 7.5 Ω Diode Forward Voltage VSD - 0.72 1 V IS - - 0.2 A - 14.5 40 pF - 5.0 20 pF - 0.25 5 pF - 0.23 - - 0.05 - - 0.06 - Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance CDSS Reverse Transfer Capacitance CRSS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain(Miller) Charge Qgd Rev.06.6 VGS=0V, VDS =25V, f=1MHz ID =0.2A, VDS =6V, VGS =4.5V 1 nC www.prisemi.com N-Channel MOSFET PNMT60V02E Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units - - 20 ns - - 20 ns SWITCHING PARAMETERS Turn-On Delay Time td(on) Turn-Off Delay Time td(off) Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current Irrm VDS=30V, VGS =10V, RG=25Ω, RL=150Ω ID =0.2A IF=0.2A, dI/dt=100A/μs 11.3 nS 7.5 nC 0.66 A Absolute maximum rating@25℃ Rating Symbol Value Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous ID 0.18 A Pulsed ID 0.36 A TA=25℃ PD 150 mW VESD(G-S) 1000 V Drain Current Total Power Dissipation Gate to Source ESD:HBM_C=100pF,R=1.5KΩ Rev.06.6 2 www.prisemi.com N-Channel MOSFET PNMT60V02E Typical Characteristics 1.0 1.0 0.8 ID – Drain Current (A) ID – Drain Current (A) T=25°C VGS=6.0V 0.8 0.6 VGS=4.5V 0.4 0.2 T=-55°C 0.6 0.4 T=125°C 0.2 VGS=3.5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 2.5 3.0 Fig 2. Transfer Characteristics 80 6 VGS=3.0V 5 Ciss (pF) 60 4 C – Capacitance (Ω) 2.0 VGS – Gate to Source Voltage (V) VDS – Drain Source Voltage (V) Fig 1. Output Characteristics rDS(on) – On-Resistance 1.5 VGS=7.0V 3 2 VGS=11.5V 40 20 COss 1 CRss 0 0.0 0 0.2 0.4 0.6 0.8 0 1.0 ID – Drain Current (A) 8 12 16 20 VDS – Drain Source Voltage (V) Fig 3. On-Resistance vs. Drain Current Rev.06.6 4 Fig 4. Capacitance 3 www.prisemi.com N-Channel MOSFET PNMT60V02E Product dimension(SOT-23) A D(3) C θ B G(1) D H S(2) F G E J L K Millimeters Inches Dim Rev.06.6 MIN MAX MIN MAX A 2.80 3.00 0.1102 0.1197 B 1.20 1.40 0.0472 0.0551 C 2.10 2.50 0.0830 0.0984 D 0.89 1.02 0.0350 0.0401 E 0.45 0.60 0.0177 0.0236 F 1.78 2.04 0.0701 0.0807 G 0.085 0.177 0.0034 0.0070 H 0.45 0.60 0.0180 0.0236 J 0.37 0.50 0.0150 0.0200 K 0.89 1.11 0.0350 0.0440 L 0.013 0.100 0.0005 0.0040 θ 0° 10° 0° 10° 4 www.prisemi.com N-Channel MOSFET PNMT60V02E IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.6 5 www.prisemi.com