1N457/A
1N457/A
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
Parameter
70
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Tstg
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
1.0
4.0
-65 to +200
A
A
°C
TJ
Operating Junction Temperature
175
°C
Value
Units
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
PD
Power Dissipation
500
mW
RθJA
Thermal Resistance, Junction to Ambient
300
°C/W
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
VR
Breakdown Voltage
VF
Forward Voltage
IR
Reverse Current
CT
Total Capacitance
2002 Fairchild Semiconductor Corporation
Test Conditions
1N457
1N457A
1N457
IR = 100 µA
IF = 20 mA
IF = 100 mA
VR = 60 V
VR = 60 V, TA = 150°C
VR = 0, f = 1.0 MHz
Min
Max
Units
1.0
1.0
25
5
8.0
V
V
nA
µA
pF
70
V
1N457/A, Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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Rev. H5
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