0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
1N4770A

1N4770A

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    DO-204AH, DO-35, Axial

  • 描述:

    DIODE ZENER 9.1V 500MW DO35

  • 数据手册
  • 价格&库存
1N4770A 数据手册
• 9.1 VOLT NOMINAL ZENER VOLTAGE + 5% • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4765 thru 1N4774A • LOW CURRENT RANGE: 0.5 AND 1.0 mA • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C DC Power Dissipation: 500mW @ +50°C Power Derating: 4 mW / °C above +50°C REVERSE LEAKAGE CURRENT lR = 10 µA @ 25°C & VR = 6 Vdc ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. JEDEC TYPE NUMBER ZENER VOLTAGE vz @ I ZT ZENER TEST CURRENT I ZT (Note 3) MAXIMUM DYNAMIC IMPEDANCE ZZT MAXIMUM VOLTAGE TEMPERATURE TEMPERATURE RANGE STABILITY ∆V ZT EFFECTIVE TEMPERATURE COEFFICIENT (Note 1) (Note 2) VOLTS mA OHMS mV °C % / °C 1N4765 1N4765A 1N4766 1N4766A 9.1 9.1 9.1 9.1 0.5 0.5 0.5 0.5 350 350 350 350 68 141 34 70 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0.01 0.01 0.005 0.005 1N4767 1N4767A 1N4768 1N4768A 9.1 9.1 9.1 9.1 0.5 0.5 0.5 0.5 350 350 350 350 14 28 6.8 14 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0.002 0.002 0.001 0.001 1N4769 1N4769A 1N4770 1N4770A 9.1 9.1 9.1 9.1 0.5 0.5 1.0 1.0 350 350 200 200 3.4 7 68 141 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0.0005 0.0005 0.01 0.01 1N4771 1N4771A 1N4772 1N4772A 9.1 9.1 9.1 9.1 1.0 1.0 1.0 1.0 200 200 200 200 34 70 14 28 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0.005 0.005 0.002 0.002 1N4773 1N4773A 1N4774 1N4774A 9.1 9.1 9.1 9.1 1.0 1.0 1.0 1.0 200 200 200 200 6.8 14 3.4 7 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0.001 0.001 0.0005 0.0005 NOTE 1 Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to 10% of lZT. FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case. DO – 35 outline. LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING POSITION: ANY. NOTE 2 The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV at any discrete temperature between the established limits, per JEDEC standard No.5. NOTE 3 Zener voltage range equals 9.1 volts + 5%. 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com thru 1N4774A 600 Pd, Rated Power Dissipation (mW) 1N4765 500 400 300 200 100 0 0 25 50 75 100 125 150 TL, Lead temperature (C°) 3/8” from body FIGURE 2 CHANGE IN TEMPERATURE COEFFICIENT (%/°C) POWER DERATING CURVE 1000 500 100 50 10 1 2 OPERATING CURRENT lZT (mA) 3 FIGURE 3 ZENER IMPEDANCE VS. OPERATING CURRENT CHANGE IN TEMPERATURE COEFFICIENT ( %/°C) +.0015 +.0010 +.0005 0 -.0005 -.0010 -.0015 0.5 1.0 1.5 OPERATING CURRENT lZT (mA) 2.0 FIGURE 4 TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT 175
1N4770A 价格&库存

很抱歉,暂时无法提供与“1N4770A”相匹配的价格&库存,您可以联系我们找货

免费人工找货