25AA512T-I/SN16KVAO

25AA512 512 Kbit SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25AA512 1.8-5.5V 128 Byte I P, SN, SM, MF Features Description • 20 MHz max. Clock Speed • Byte and Page-level Write Operations: - 128-byte page - 5 ms max. - No page or sector erase required • Low-Power CMOS Technology: - Max. Write Current: 7 mA at 5.5V - Read Current: 10 mA at 5.5V, 20 MHz - Standby Current: 1A at 2.5V (Deep powerdown) • Electronic Signature for Device ID • Self-Timed Erase and Write cycles: - Page Erase (5 ms, typical) - Sector Erase (10 ms/sector, typical) - Bulk Erase (10 ms, typical) • Sector Write Protection (16K byte/sector): - Protect none, 1/4, 1/2 or all of array • Built-In Write Protection: - Power-on/off data protection circuitry - Write enable latch - Write-protect pin • High Reliability: - Endurance: 1 Million erase/write cycles - Data Retention: >200 years - ESD Protection: 4000V • Temperature Ranges Supported: - Industrial (I):-40°C to +85°C • RoHS Compliant • Automotive AECQ-100 Qualified The Microchip Technology Inc. 25AA512 is a 512 Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase instructions typically associated with Flash-based products. These instructions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. Packages • 8-Lead DFN-S, 8-Lead PDIP, 8-Lead SOIC and 8-Lead SOIJ Package Types (not to scale) DFN PDIP/SOIC/SOIJ SO 2 WP 3 VSS 4 (P, SN, SM) 8 VCC 7 HOLD 6 5 CS SO 1 2 SCK WP 3 SI VSS 4 25AA512 CS 1 25AA512 (MF) 8 7 VCC HOLD 6 SCK 5 SI Pin Function Table Name Function CS SO Chip Select Input Serial Data Output WP VSS SI SCK Write-Protect Ground Serial Data Input Serial Clock Input HOLD VCC Hold Input Supply Voltage  2007-2021 Microchip Technology Inc. DS20002021H-page 1 25AA512 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (†) VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ..........................................................................................................-0.6V to VCC +1.0V Storage temperature ................................................................................................................................. -65°C to 150°C Ambient temperature under bias............................................................................................................... -40°C to 125°C ESD protection on all pins.......................................................................................................................................... 4 kV † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS DC CHARACTERISTICS Param. No. Sym. Characteristic Electrical Characteristics: Industrial (I)*: TA = 0°C to +85°C Industrial (I): TA = -40°C to +85°C *Limited industrial temp range. Min. Max. Units D001 VIH1 High-level input voltage 0.7 x VCC VCC + 1 V D002 VIL1 -0.3 0.3 x VCC V D003 VIL2 Low-level input voltage D004 VOL D005 VOL D006 VCC = 1.8V to 5.5V VCC = 2.0V to 5.5V Test Conditions VCC2.7V -0.3 0.2 x VCC V VCC < 2.7V Low-level output voltage — 0.4 V IOL = 2.1 mA — 0.2 V IOL = 1.0 mA, VCC < 2.5V VOH High-level output voltage VCC - 0.2 — V IOH = -400 A D007 ILI Input leakage current — ±1 A CS = VCC, VIN = VSS TO VCC D008 ILO Output leakage current — ±1 A CS = VCC, VOUT = VSS TO VCC D009 CINT Internal capacitance (all inputs and outputs) — 7 pF TA = 25°C, CLK = 1.0 MHz, VCC = 5.0V (Note) D010 ICC Read — 10 mA — 5 mA VCC = 5.5V; FCLK = 20.0 MHz; SO = Open VCC = 2.5V; FCLK = 10.0 MHz; SO = Open — — 7 5 mA mA VCC = 5.5V VCC = 2.5V Operating current D011 ICC Write D012 ICCS Standby current — 10 A CS = VCC = 5.5V, Inputs tied to VCC or VSS, 85°C D13 ICCSPD Deep power-down current — 1 A CS = VCC = 2.5V, Inputs tied to VCC or VSS, 85°C Note: This parameter is periodically sampled and not 100% tested.  2007-2021 Microchip Technology Inc. DS20002021H-page 2 25AA512 TABLE 1-2: AC CHARACTERISTICS AC CHARACTERISTICS Param. No. Sym. Characteristic Industrial (I)*: TA = 0°C to +85°C Industrial (I): TA = -40°C to +85°C *Limited industrial temp range. VCC = 1.8V to 5.5V VCC = 2.0V to 5.5V Min. Max. Units Conditions — — — 20 10 2 MHz MHz MHz 4.5 VCC 5.5 2.5 VCC 5.5 1.8  VCC