APT10035B2FLL
APT10035LFLL
1000V 28A 0.350Ω
POWER MOS 7
R
FREDFET
B2FLL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
LFLL
D
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
T-MAX™
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT10035
UNIT
1000
Volts
28
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
690
Watts
Linear Derating Factor
5.5
W/°C
VGSM
PD
TJ,TSTG
112
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
-55 to 150
Operating and Storage Junction Temperature Range
TL
1
28
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
Amps
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
MAX
UNIT
1000
Volts
28
Amps
(VGS = 10V, 14A)
0.350
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
250
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Downloaded from Elcodis.com electronic components distributor
3-2003
BVDSS
Characteristic / Test Conditions
050-7037 Rev B
Symbol
APT10035B2FLL - LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Input Capacitance
VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crss
3
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
ID = 28A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
td(off)
VDD = 500V
Turn-off Delay Time
tf
ID = 28A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
ns
900
VDD = 670V, VGS = 15V
Eon
nC
9
RG = 0.6Ω
Eon
UNIT
pF
160
186
24
122
12
10
36
VGS = 10V
td(on)
MAX
5185
881
VDD = 500V
Gate-Source Charge
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
MIN
Test Conditions
Ciss
ID = 28A, RG = 5Ω
623
INDUCTIVE SWITCHING @ 125°C
1423
VDD = 670V VGS = 15V
µJ
779
ID = 28A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
28
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
112
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -28A)
1.3
Volts
dv/
dt
Peak Diode Recovery
18
V/ns
dv/
dt
5
Reverse Recovery Time
(IS = -28A, di/dt = 100A/µs)
Tj = 25°C
320
Tj = 125°C
650
Q rr
Reverse Recovery Charge
(IS = -28A, di/dt = 100A/µs)
Tj = 25°C
3.60
Tj = 125°C
9.72
IRRM
Peak Recovery Current
(IS = -28A, di/dt = 100A/µs)
Tj = 25°C
16.5
Tj = 125°C
24.7
t rr
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.18
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.15
0.7
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7037 Rev B
3-2003
0.20
0.5
0.3
Duty Factor D = t1/t2
0.1
SINGLE PULSE
0.05
0
t1
t2
0.05
10-5
10-4
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Downloaded from Elcodis.com electronic components distributor
°C/W
4 Starting Tj = +25°C, L = 7.65mH, RG = 25Ω, Peak IL = 28A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID28A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.10
UNIT
1.0
Typical Performance Curves
APT10035B2FLL - LFLL
60
RC MODEL
Junction
temp. ( ”C)
0.0271
Power
(Watts)
0.00899F
0.0656
0.0202F
0.0859
0.293F
Case temperature
ID, DRAIN CURRENT (AMPERES)
VGS =15,10 & 8V
50
7V
40
6.5V
30
6V
20
5.5V
10
5V
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@
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