APT10050LVFRG

APT10050B2VFR APT10050LVFR 1000V 21A 0.500Ω B2VFR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-MAX™ TO-264 LVFR • Identical Specifications: T-MAX™ or TO-264 Package • Faster Switching D • 100% Avalanche Tested G • Lower Leakage S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT10050B2VFR_LVFR UNIT 1000 Volts Drain-Source Voltage 21 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 520 Watts Linear Derating Factor 4.16 W/°C VGSM PD TJ,TSTG 84 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 21 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX UNIT 1000 Volts 21 Amps (VGS = 10V, 0.5 ID[Cont.]) 0.500 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 11-2004 BVDSS Characteristic / Test Conditions 050-5591 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT10050B2VFR_LVFR Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 6600 7900 Coss Output Capacitance VDS = 25V 595 830 Crss Reverse Transfer Capacitance f = 1 MHz 290 430 Qg Total Gate Charge VGS = 10V 335 500 Qgs Gate-Source Charge VDD = 0.5 VDSS Qgd Gate-Drain ("Miller ") Charge ID = ID [Cont.] @ 25°C 29 165 45 250 VGS = 15V 16 32 t d(on) 3 Turn-on Delay Time tr Rise Timexxdx t d(off) Turn-off Delay Time tf VDD = 0.5 VDSS 13 26 ID = ID [Cont.] @ 25°C 59 90 RG = 0.6Ω 8 16 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN 21 Continuous Source Current (Body Diode) Peak Diode Recovery dt dv/ 84 (Body Diode) dt UNIT Amps (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts 5 18 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 1.7 Tj = 125°C 4.8 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 12 Tj = 125°C 19 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.24 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% VR = 200V. D=0.5 0.1 0.2 0.1 0.05 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5591 Rev C 11-2004 0.3 0.01 0.02 0.005 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 11.34mH, R = 25Ω, Peak I = 21A j G L 5 I ≤ -I [Cont.], di/ = 100A/µs, V S D DD - VDSS, Tj - 150°C, RG = 2.0Ω, dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.05 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT10050B2VFR_LVFR 50 VGS=5.5V, 10V & 15V 40 5V 30 20 4.5V 10 ID, DRAIN CURRENT (AMPERES) 40 VGS=5.5V, 10V & 15V 5V 30 20 4.5V 10 4V 4V 0 0 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @