APT1204R7BFLLG

APT1204R7BFLL APT1204R7SFLL 1200V 3.5A 4.700Ω POWER MOS 7 R FREDFET D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT1204R7B_SFLL UNIT 1200 Volts Drain-Source Voltage ID Continuous Drain Current @ TC = 25°C IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 135 Watts Linear Derating Factor 1.08 W/°C PD TJ,TSTG 1 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy 1 Amps 14 TL EAS 3.5 -55 to 150 °C 300 Amps 3.5 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 10 4 mJ 425 STATIC ELECTRICAL CHARACTERISTICS RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1200 Drain-Source On-State Resistance 2 (VGS = 10V, ID = 1.75A) TYP MAX UNIT Volts 4.70 Ohms Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA 7-2006 BVDSS Characteristic / Test Conditions 050-7390 Rev B Symbol APT1204R7B_SFLL DYNAMIC CHARACTERISTICS Symbol C iss Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 600V ID = 3.5A @ 25°C Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 115 VDD = 800V, VGS = 15V 23 ID = 3.5A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 24 RG = 1.6Ω Eon UNIT pF 36 31 4 21 7 2 20 VDD = 600V Fall Time MAX 715 130 ID = 3.5A @ 25°C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN µJ 135 VDD = 800V, VGS = 15V ID = 3.5A, RG = 4.3Ω 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 14 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID 3.5A) 1.3 Volts dv/ Peak Diode Recovery 18 V/ns dt dv/ dt 3.5 5 t rr Reverse Recovery Time (IS = -ID 3.5A, di/dt = 100A/µs) Tj = 25°C 250 Tj = 125°C 515 Q rr Reverse Recovery Charge (IS = -ID 3.5A, di/dt = 100A/µs) Tj = 25°C 0.5 Tj = 125°C 1.1 IRRM Peak Recovery Current (IS = -ID 3.5A, di/dt = 100A/µs) Tj = 25°C 8.3 Tj = 125°C 11.5 Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.90 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.60 0.5 Note: 0.40 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7390 Rev B 7-2006 1.0 0.3 SINGLE PULSE 0.20 0.1 0 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-5 10-4 °C/W 4 Starting Tj = +25°C, L = 69.39mH, RG = 25Ω, Peak IL = 3.5A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID3.5A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.80 UNIT 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 0.386 0.508 Dissipated Power (Watts) 0.0903 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ID, DRAIN CURRENT (AMPERES) TC ( C) ZEXT TJ ( C) 0.00336 8 6 TJ = -55°C TJ = +125°C 4 TJ = +25°C 2 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 3 2.5 2 1.5 1 0.5 25 4 6V 3 2 5.5V 1 5V 1.40 V NORMALIZED TO = 10V @ 1.75A GS 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 1 2 3 4 5 6 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT D V 1.05 1.00 0.95 0.90 0.85 -50 1.2 = 1.75A GS = 10V 2.0 1.5 1.0 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 1.1 1.0 0.9 0.8 7-2006 I 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 0.0 6.5V 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 3.5 0 5 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7390 Rev B 0 7V 6 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @