APT15GN120BDQ1G

TYPICAL PERFORMANCE CURVES APT15GN120BD_SDQ1(G) APT15GN120SDQ1 APT15GN120BDQ1 APT15GN120BDQ1(G) APT15GN120SDQ1(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 D3PAK 47 (S) C G G • 1200V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling C E E C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT15GN120BD_SDQ1(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 45 I C2 Continuous Collector Current @ TC = 110°C 22 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 45 Switching Safe Operating Area @ TJ = 150°C 45A @ 1200V Total Power Dissipation Watts 195 Operating and Storage Junction Temperature Range -55 to 150 °C Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) VGE(TH) Gate Threshold Voltage VCE(ON) (VCE = VGE, I C = 600µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Gate-Emitter Leakage Current (VGE = ±20V) RGINT Intergrated Gate Resistor 5.0 5.8 6.5 1.4 1.7 2.1 Units Volts 2.0 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) I GES MAX 1200 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) I CES TYP 200 2 120 N/A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA TBD nA Ω 7-2009 V(BR)CES MIN Rev C Characteristic / Test Conditions 050-7598 Symbol DYNAMIC CHARACTERISTICS Symbol APT15GN120BD_SDQ1(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA Total Gate Charge 3 Gate-Emitter Charge TYP Capacitance 1200 VGE = 0V, VCE = 25V 65 f = 1 MHz 50 Gate Charge 9.0 VGE = 15V 90 VCE = 600V 5 I C = 15A 55 Gate-Collector ("Miller ") Charge TJ = 150°C, R G = 4.3Ω 7, VGE = Switching Safe Operating Area MIN 15V, L = 100µH,VCE = 1200V Inductive Switching (25°C) 10 tr Current Rise Time VCC = 800V 9 td(off) Turn-off Delay Time VGE = 15V 150 I C = 15A 110 RG = 4.3Ω 7 410 Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) 4 TJ = +25°C 5 Turn-off Switching Energy td(on) Turn-on Delay Time Inductive Switching (125°C) 10 tr Current Rise Time VCC = 800V 9 Turn-off Delay Time VGE = 15V 170 I C = 15A RG = 4.3Ω 7 185 475 TJ = +125°C 1310 tf 6 44 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy ns µJ 950 Current Fall Time Eon1 nC 730 Eoff td(off) V A Turn-on Delay Time Current Fall Time UNIT pF 45 td(on) tf MAX 55 66 ns µJ 1300 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case (IGBT) RθJC Junction to Case (DIODE) WT Package Weight MIN TYP MAX .64 1.18 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7598 Rev C 7-2009 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT15GN120BD_SDQ1(G) 60 60 GE = 15V 15V IC, COLLECTOR CURRENT (A) 50 40 TJ = 125°C 30 TJ = 25°C 20 TJ = -55°C 10 IC, COLLECTOR CURRENT (A) V 50 13V 40 12V 30 11V 10V 20 9V 10 8V 7V 0 0 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) TJ = 125°C 30 20 10 0 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.5 TJ = 25°C. 250µs PULSE TEST