APT200GN60B2G

APT200GN60B2G 600V, VCE(ON) = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. • 1200V Field Stop • Trench Gate: Low VCE(ON) • Easy Paralleling • Integrated Gate Resistor :Low EMI, High Reliability • RoHS Compliant Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS All Ratings: TC = 25°C unless otherwise specified. Maximum Ratings Symbol Parameter Ratings VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 283 IC2 Continuous Collector Current @ TC = 110°C 158 ICM SSOA PD TJ, TSTG TL Pulsed Collector Current 1 Unit Volts Amps 600 Switching Safe Operating Area @ TJ = 175°C 600A @ 600V Total Power Dissipation 682 Operating and Storage Junction Temperature Range Watts -55 to 175 Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec. °C 300 Static Electrical Characteristics Min Typ Max Unit V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) 600 - - VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 3.2mA, Tj = 25°C) 5.0 5.8 6.5 Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C) 1.05 1.45 1.85 Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C) - 1.65 - Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 - - 25 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 - - 1000 Gate-Emitter Leakage Current (VGE = ±20V) - - 600 nA Integrated Gate Resistor - 2 - Ω VCE(ON) ICES IGES RG(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Volts μA 050-7628 Rev A 9-2008 Symbol Characteristic / Test Conditions Dynamic Characteristics Symbol APT200GN60B2G Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage VGE = 0V, VCE = 25V f = 1MHz Gate Charge Min Typ Max - 14100 - - 461 - - 393 - - 8.2 - Qg Total Gate Charge VGE = 15V - 1180 - Qge Gate-Emitter Charge VCE= 300V - 85 - Gate-Collector Charge IC = 100A - 660 - Qgc SSOA td(on) tr td(off) tf Eon1 Switching Safe Operating Area TJ = 150°C, RG = 1.0Ω , VGE = 15V, L = 100μH, VCE= 600V Turn-On Delay Time - 50 - Inductive Switching (25°C) - 80 - Turn-Off Delay Time VCC = 400V 560 - Current Fall Time VGE = 15V - 100 - RG = 1.0Ω - 13 - TJ = +25°C - 15 - Current Rise Time IC = 200A Eon2 Turn-On Switching Energy Eoff Turn-Off Switching Energy 6 - 11 - td(on) Turn-On Delay Time - 50 - Inductive Switching (125°C) - 80 - Turn-Off Delay Time VCC = 400V - 620 - Current Fall Time VGE = 15V - 70 - Turn-On Switching Energy 4 IC = 200A 14 - Turn-On Switching Energy RG = 1.0Ω - 5 - 16 - Turn-Off Switching Energy 6 - 10 - Eon1 Eon2 Eoff nC A 5 tf V 600 Turn-On Switching Energy td(off) pF 7 4 tr Unit Current Rise Time TJ = +125°C ns mJ ns mJ Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions R R θJC θJC WT Min Typ Max Unit Junction to Case (IGBT) - - 0.13 °C/W Junction to Case (DIODE) - - N/A Package Weight - 6.1 - 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. 050-7628 Rev A 9-2008 Microsemi reserves the right to change, without notice, the specifications and information contained herein. gm Typical Performance Curves APT200GN60B2G 400 450 GE = 15V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 300 250 TJ= 25°C 200 TJ= 125°C 150 TJ= 150°C 100 TJ= 55°C 50 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) 250μs PULSE TEST