APT200GN60J

APT200GN60J 600V TYPICAL PERFORMANCE CURVES APT200GN60J ® C G ISOTOP ® • 600V Field Stop • • • • • E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses Trench Gate: Low VCE(on) Easy Paralleling 5µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability 175°C Rated S OT 22 7 "UL Recognized" file # E145592 C G E Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 I C1 Continuous Collector Current @ TC = 25°C 283 I C2 Continuous Collector Current @ TC = 110°C 158 I CM SSOA PD TJ,TSTG Pulsed Collector Current UNIT APT200GN60J 1 Volts Amps 600 Switching Safe Operating Area @ TJ = 175°C 600A @600V Total Power Dissipation Operating and Storage Junction Temperature Range 682 Watts -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 3.2mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 25°C) VCE(ON) I CES I GES RGINT TYP MAX 5 5.8 6.5 1.05 1.45 1.85 Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 125°C) 1.65 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) 1.15 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) 1.19 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 25 2 600 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Volts µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor UNIT nA Ω 11-2005 MIN Rev B Characteristic / Test Conditions 050-7610 Symbol APT200GN60J DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA SCSOA td(on) tr td(off) tf Eon1 8.2 VGE = 15V 1180 VGE = V nC A 5 µs 80 ns 560 I C = 200A 100 RG = 1.0Ω 7 13 TJ = +25°C 5 pF 600 50 4 UNIT 660 7, VCC = 400V Current Fall Time MAX 85 Inductive Switching (25°C) Turn-off Delay Time mJ 15 6 11 Turn-on Delay Time Inductive Switching (125°C) 50 VCC =400V 80 Current Rise Time Turn-off Delay Time VGE = 15V 620 RG = 1.0Ω 7 70 14 I C = 200A Current Fall Time Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Turn-off Switching Energy Gate Charge VGE = 15V Eon1 Eoff 4000 VCC = 360V, VGE = 15V, Current Rise Time Turn-off Switching Energy tf f = 1 MHz TJ = 150°C, R G = 1.0Ω 7 Turn-on Delay Time Eoff td(off) 4610 15V, L = 100µH, VCE = 600V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V TJ = 175°C, R G = 1.0Ω Eon2 td(on) 14100 I C = 100A Short Circuit Safe Operating Area TYP Capacitance VCE = 300V Switching Safe Operating Area Turn-on Switching Energy MIN 44 55 TJ = +125°C ns 16 66 mJ 10 THERMAL AND MECHANICAL CHARACTERISTICS Symbol MIN TYP MAX RθJC Junction to Case (IGBT) .22 RθJC Junction to Case (DIODE) N/A VIsolation WT Torque 1 Characteristic RMS Voltage (50-60Hz Sinusoidal Wavefom from Terminals to Mounting Base for 1 Min.) Package Weight Maximum Terminal & Mounting Torque 2500 UNIT °C/W Volts 1.03 oz 29.2 gm 10 Ib•in 1.1 N•m Repetitive Rating: Pulse width limited by maximum junction temperature. 3 See MIL-STD-750 Method 3471. Rev B 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 050-7610 11-2005 2 For Combi devices, Ices includes both IGBT and FRED leakages 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES TJ = -55°C TJ = 25°C 300 TJ = 125°C 250 TJ = 175°C 200 150 100 50 0 IC, COLLECTOR CURRENT (A) TJ = -55°C TJ = 25°C 300 TJ = 125°C 250 200 150 100 TJ = 175°C 50 0 0 250 9V 200 8.5V 150 8V 100 7.5V 50 7V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST