APT25GN120B2DQ2G

APT25GN120B2DQ2(G) 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses. T-MaxTM G C E • 1200V NPT Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 10µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT25GN120B2DQ2(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 67 I C2 Continuous Collector Current @ TC = 110°C 33 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 75 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C 75A @ 1200V Total Power Dissipation 272 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 150µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) RGINT Intergrated Gate Resistor 5.8 6.5 1.4 1.7 2.1 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 5 Units Volts 1.9 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) I GES MAX 1200 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 200 2 600 8 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA TBD nA Ω 10-2005 V(BR)CES MIN Rev B Characteristic / Test Conditions 050-7603 Symbol APT25GN120B2DQ2(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA SCSOA td(on) tr td(off) tf Eon1 155 VGE = µs 17 ns 280 135 RG = 4.3Ω 7 TBD TJ = +25°C µJ 1490 2150 Inductive Switching (125°C) 22 VCC = 800V 17 Turn-off Delay Time VGE = 15V 335 RG = 4.3Ω 7 225 TBD I C = 25A Current Fall Time Turn-on Switching Energy (Diode) nC 10 VCC = 800V Current Rise Time Turn-on Switching Energy V A 6 Eon2 pF 75 22 5 UNIT 85 7, Inductive Switching (25°C) 4 MAX 10 I C = 25A Turn-on Delay Time Turn-off Switching Energy 9.5 VGE = 15V VCC = 960V, VGE = 15V, Current Fall Time Eon1 Eoff Gate Charge VGE = 15V Turn-off Switching Energy tf 85 TJ = 125°C, R G = 4.3Ω 7 Turn-off Delay Time Eoff tr 105 f = 1 MHz 15V, L = 100µH,VCE = 1200V Current Rise Time Turn-on Switching Energy (Diode) td(off) VGE = 0V, VCE = 25V TJ = 150°C, R G = 4.3Ω Turn-on Delay Time Eon2 td(on) 1800 I C = 25A Short Circuit Safe Operating Area TYP Capacitance VCE = 600V Switching Safe Operating Area Turn-on Switching Energy MIN 44 55 TJ = +125°C ns 2390 66 µJ 3075 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .46 RθJC Junction to Case (DIODE) .67 WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7603 Rev B 10-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 15V IC, COLLECTOR CURRENT (A) 40 10V 30 9V 20 8V 10 7V 0 FIGURE 1, Output Characteristics(TJ = 25°C) 60 TJ = 125°C 45 TJ = 25°C 30 TJ = -55°C 15 0 0 10V 30 9V 20 8V 10 7V 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250µs PULSE TEST