APT50GN120L2DQ2G

APT50GT120B2RDQ2G 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. Features • Low Forward Voltage Drop • RBSOA and SCSOA Rated • Low Tail Current • High Frequency Switching to 50KHz • RoHS Compliant • Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation. All Ratings: TC = 25°C unless otherwise specified. Maximum Ratings Symbol Parameter Ratings VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 IC1 Continuous Collector Current @ TC = 25°C 94 IC2 Continuous Collector Current @ TC = 100°C 50 ICM SSOA PD TJ, TSTG TL Pulsed Collector Current Unit Volts Amps 150 1 Switching Safe Operating Area @ TJ = 150°C 150A @ 1200V Total Power Dissipation 625 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec. °C 300 Static Electrical Characteristics Min Typ Max 1200 - - V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 3mA) VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 2mA, Tj = 25°C) 4.5 5.5 6.5 Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C) 2.7 3.2 3.7 Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C) - 4.0 - - - 300 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 - - TBD Gate-Emitter Leakage Current (VGE = ±20V) - - 300 VCE(ON) ICES IGES Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Unit Volts μA nA 052-6289 Rev D 3-2012 Symbol Characteristic / Test Conditions Dynamic Characteristic Symbol APT50GT120B2RDQ2R Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage VGE = 0V, VCE = 25V f = 1MHz Gate Charge Min Typ Max - 3700 - - 380 - - 225 - - 10.5 - Qg Total Gate Charge VGE = 15V - 340 - Qge Gate-Emitter Charge VCE= 600V - 40 - IC = 50A - 210 - Qgc SSOA td(on) tr td(off) tf Eon1 Gate-Collector Charge Switching Safe Operating Area TJ = 150°C, RG = 1.0Ω , VGE = 15V, L = 100μH, VCE= 1200V Turn-On Delay Time 150 - 24 - Inductive Switching (25°C) - 53 - Turn-Off Delay Time VCC = 800V 230 - Current Fall Time VGE = 15V - 26 - RG = 4.7Ω - TBD - TJ = +25°C - 5330 - Current Rise Time IC = 50A Eon2 Turn-On Switching Energy 5 Eoff Turn-Off Switching Energy 6 - 2033 - td(on) Turn-On Delay Time - 24 - Inductive Switching (125°C) - 53 - Turn-Off Delay Time VCC = 800V - 255 - Current Fall Time VGE = 15V - 48 - Turn-On Switching Energy 4 IC = 50A TBD - Turn-On Switching Energy RG = 4.7Ω - 5 - 5670 - Turn-Off Switching Energy 6 - 2850 - tf Eon1 Eon2 Eoff V nC A Turn-On Switching Energy td(off) pF 7 4 tr Unit Current Rise Time TJ = 125°C ns μJ ns μJ Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions R R θJC θJC WT Max Unit Junction to Case (IGBT) 0.20 °C/W Junction to Case (DIODE) 0.80 Package Weight Min Typ 6.2 g 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 052-6289 Rev D 3-2012 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves V GE APT50GT120B2RDQ2G 150 = 15V 13V 125 TJ= 55°C 100 75 TJ= 125°C 50 TJ= 150°C 25 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 100 75 TJ= -55°C TJ= 25°C TJ= 125°C 0 TJ = 25°C. 250μs PULSE TEST