APT2X30DQ120J

2 1 3 4 2 1 Anti-Parallel APT2x30DQ120J 3 4 2 1 3 4 SO Parallel APT2x31DQ120J 2 T- 27 "UL Recognized" ISOTOP ® file # E145592 APT2x31DQ120J APT2x30DQ120J 1200V 30A 1200V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating • Low Leakage Current • High Speed Rectifiers • Avalanche Energy Rated -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode MAXIMUM RATINGS Symbol VR Density All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT2x31_30DQ120J UNIT 1200 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 89°C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 39 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG Amps 210 Operating and StorageTemperature Range 20 mJ -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS Forward Voltage MIN TYP MAX IF = 30A 2.6 3.1 IF = 60A 3.25 IF = 30A, TJ = 125°C IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V Volts 1.8 VR = 1200V 100 VR = 1200V, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com UNIT 36 µA pF 7-2006 VF Characteristic / Test Conditions 053-4221 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol APT2x31_30DQ120J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 800V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 30A, diF/dt = -200A/µs VR = 800V, TC = 125°C IF = 30A, diF/dt = -1000A/µs Maximum Reverse Recovery Current VR = 800V, TC = 125°C MIN TYP MAX UNIT - 25 - 300 - 360 - 4 - 380 ns - 1700 nC - 8 - 160 ns - 2550 nC - 28 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) MAX UNIT 1.1 °C/W Volts 2500 Package Weight 1.03 oz 29.2 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.80 0.7 0.60 0.5 0.40 Note: PDM 1.00 0.3 0 0.1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.05 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 7-2006 TJ (°C) 053-4221 Rev D t1 t2 0.20 TC (°C) 0.219 0.468 0.341 Dissipated Power (Watts) 0.00306 0.0463 0.267 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 1.20 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 450 90 400 80 70 TJ = 175°C 60 50 TJ = 25°C 40 TJ = 125°C 30 20 TJ = -55°C 10 0 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) T = 125°C J V = 800V R 3500 60A 3000 2500 30A 2000 1500 15A 1000 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 250 15A 200 150 100 30 T = 125°C J V = 800V 60A R 25 20 30A 15 10 15A 5 45 Duty cycle = 0.5 T = 175°C 40 J 35 30 IRRM 0.6 Qrr 0.2 0.0 30A 300 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change trr 0.4 350 0 trr 0.8 R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change Qrr 1.0 T = 125°C J V = 800V 60A 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.2 APT2x31_30DQ120J 50 0 4000 trr, REVERSE RECOVERY TIME (ns) 100 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) TYPICAL PERFORMANCE CURVES 25 20 15 10 5 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 150 7-2006 100 50 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4221 Rev D CJ, JUNCTION CAPACITANCE (pF) 200 APT2x31_30DQ120J Vr diF /dt Adjust +18V APT10035LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 053-4221 Rev D 7-2006 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel Parallel APT2x30DQ120J Anode 2 APT2x31DQ120J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.