APT2X60DQ120J

2 1 3 4 2 1 Anti-Parallel APT2x60DQ120J 3 4 2 1 3 4 SO Parallel APT2x61DQ120J 2 T- 27 "UL Recognized" ISOTOP ® file # E145592 APT2x61DQ120J 1200V 60A APT2x60DQ120J 1200V 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating • Low Leakage Current • High Speed Rectifiers • Avalanche Energy Rated -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode MAXIMUM RATINGS Symbol VR Density All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT2x61_60DQ120J UNIT 1200 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5) 60 RMS Forward Current (Square wave, 50% duty) 73 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG Amps 540 Operating and StorageTemperature Range 20 mJ -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 60A 2.5 3.1 IF = 120A 3.07 IF = 60A, TJ = 125°C 1.82 Volts VR = 1200V 100 VR = 1200V, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 70 UNIT µA pF 7-2006 VF Characteristic / Test Conditions 053-4228 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol APT2x61_60DQ120J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 800V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 60A, diF/dt = -200A/µs VR = 800V, TC = 125°C IF = 60A, diF/dt = -1000A/µs Maximum Reverse Recovery Current VR = 800V, TC = 125°C MIN TYP MAX UNIT - 60 - 265 - 560 - 5 - 350 ns - 2890 nC - 13 - 150 ns - 4720 nC - 40 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) MAX UNIT .56 °C/W Volts 2500 Package Weight 1.03 oz 29.2 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.40 0.7 0.30 0.5 0.20 0.3 Note: PDM 0.50 0 t 0.1 SINGLE PULSE 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 7-2006 TJ (°C) 053-4228 Rev D t1 t2 0.10 TC (°C) 0.148 0.238 0.174 Dissipated Power (Watts) 0.006 0.0910 0.524 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 0.60 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL TYPICAL PERFORMANCE CURVES 200 TJ = 175°C 120 100 TJ = 125°C 80 60 TJ = 25°C 40 TJ = -55°C 20 0 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 7000 T = 125°C J V = 800V R 6000 120A 5000 4000 60A 3000 30A 2000 1000 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 30A 200 150 100 50 T = 125°C J V = 800V 45 120A R 40 35 30 25 60A 20 15 30A 10 5 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 90 Duty cycle = 0.5 T = 175°C 80 J 70 60 IRRM 0.4 50 40 30 Qrr 0.2 0.0 60A 250 0 trr 0.6 300 R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change trr 0.8 350 0 Qrr 1.0 T = 125°C J V = 800V 120A 50 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.2 trr, REVERSE RECOVERY TIME (ns) 160 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 180 140 APT2x61_60DQ120J 400 20 10 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 300 250 200 7-2006 150 100 50 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4228 Rev D CJ, JUNCTION CAPACITANCE (pF) 350 APT2x61_60DQ120J Vr diF /dt Adjust +18V APT10035LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 053-4228 Rev D 7-2006 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel APT2x60DQ120J Anode 2 Parallel APT2x61DQ120J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.