APT30D100BG

1000V 30A APT30D100BG APT30D100SG Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Cooler Operation • Popular TO-247 Package or Surface Mount D3PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current • PFC 2 1 • Increased System Power Density 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. APT30D100(B/S)G Characteristic / Test Conditions Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 128°C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 60 IF(RMS) IFSM TJ,TSTG TL UNIT 1000 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Volts Amps 210 -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol 053-0002 Rev E 1-2020 VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 30A 1.9 2.3 IF = 60A 2.2 IF = 30A, TJ = 125°C 1.7 Volts VR = VR Rated 250 VR = VR Rated, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 32 UNIT µA pF DYNAMIC CHARACTERISTICS Symbol APT30D100(B/S)G Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 667V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 30A, diF/dt = -200A/µs VR = 667V, TC = 125°C IF = 30A, diF/dt = -1000A/µs Maximum Reverse Recovery Current VR = 667V, TC = 125°C MIN TYP - 29 - 290 - 670 - 5 - 390 ns - 2350 nC - 11 - 160 ns - 3500 nC - 38 Amps MIN TYP MAX UNIT ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MAX RθJC Junction-to-Case Thermal Resistance .61 RθJA Junction-to-Ambient Thermal Resistance 40 WT Torque Package Weight oz 5.9 g 10 lb•in 1.1 N•m APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 0.40 0.5 0.30 Note: 0.3 0.20 10-5 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL 1-2020 Junction temp (°C) 053-0002 Rev E t1 t2 0.1 0.05 0.10 0 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.70 0.50 Power (watts) 0.0544 °C/W 0.000276 J/°C 0.129 °C/W 0.0168 J/°C 0.426 °C/W 0.379 J/°C Case temperature (°C) FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL °C/W 0.22 Maximum Mounting Torque 0.60 UNIT TYPICAL PERFORMANCE CURVES 100 70 60 TJ = 150°C 40 30 TJ = 25°C TJ = 125°C 20 TJ = -55°C 10 0 0 0.5 1 1.5 2 2.5 3. VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 6000 T = 125°C J V = 667V R 5000 60A 4000 3000 30A 2000 15A 1000 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change trr 1.0 0.4 Qrr 0 CJ, JUNCTION CAPACITANCE (pF) 1-2020 300 053-0002 Rev E 30A 250 15A 200 150 100 45 40 T = 125°C J V = 667V R 60A 35 30 25 20 30A 15 15A 10 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 70 Duty cycle = 0.5 T = 175°C J 60 40 30 20 10 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 250 200 150 100 50 0 300 50 0.2 0.0 R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change Qrr trr 0.6 350 0 IRRM 0.8 T = 125°C J V = 667V 60A 50 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.2 trr, REVERSE RECOVERY TIME (ns) 80 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 90 50 APT30D100(B/S)G 400 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature APT30D100(B/S)G Vr diF /dt Adjust +18V APT10035LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions 3 D PAK Package Outline TO-247 Package Outline 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) Cathode 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) Cathode (Heat Sink) e3 100% Sn 15.85 (.624) 16.05(.632) 1.00 (.039) 1.15(.045) 12.40 (.488) 12.70 (.500) 18.70 (.736) 19.10 (.752) 0.40 (.016) 0.65 (.026) 0.40 (.016) 1.016 (.040) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) 2.21 (.087) 2.59 (.102) 053-0002 Rev E 1-2020 Dimensions in Millimeters and (Inches) Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. 13.30 (.524) 13.60(.535) 2.40 (.094) 2.70 (.106) (Base of Lead) Heat Sink (Cathode) and Leads are Plated Anode Cathode Dimensions in Millimeters (Inches) Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www. microsemi.com.