APT34N80LC3G

APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX™ COOLMOS TO-264 Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D G S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT34N80B2C3_LC3 UNIT Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25°C 34 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±20 VGSM Gate-Source Voltage Transient ±30 Total Power Dissipation @ TC = 25°C 417 Watts Linear Derating Factor 3.33 W/°C VDSS PD TJ,TSTG TL dv/ dt 1 Amps 102 Volts -55 to 150 Operating and Storage Junction Temperature Range °C Lead Temperature: 0.063" from Case for 10 Sec. 300 Drain-Source Voltage slope (VDS = 640V, ID = 34A, TJ = 125°C) 50 V/ns Amps IAR Repetitive Avalanche Current 7 17 EAR Repetitive Avalanche Energy 7 0.5 EAS Single Pulse Avalanche Energy 4 mJ 670 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 22A) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) TYP 0.125 0.145 1.0 50 500 Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) 2.10 UNIT Volts Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TJ = 150°C) Gate Threshold Voltage (VDS = VGS, ID = 2mA) MAX 3 Ohms µA ±200 nA 3.9 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" 6-2006 Characteristic / Test Conditions 050-7147 Rev F Symbol DYNAMIC CHARACTERISTICS Symbol APT34N80B2C3 _LC3 Test Conditions Characteristic MIN TYP C iss Input Capacitance Coss Output Capacitance VDS = 25V 2050 C rss Reverse Transfer Capacitance f = 1 MHz 110 VGS = 10V 180 VDD = 400V 22 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 34A @ 25°C tf RG = 2.5Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 70 80 6 9 ns 675 VDD = 533V, VGS = 15V 6 nC 15 VDD = 400V ID = 34A @ 125°C Fall Time 355 25 VGS = 10V Turn-off Delay Time pF 90 RESISTIVE SWITCHING Rise Time td(off) UNIT 4510 VGS = 0V 3 MAX ID = 34A, RG = 5Ω 580 INDUCTIVE SWITCHING @ 125°C 1145 VDD = 533V, VGS = 15V ID = 34A, RG = 5Ω µJ 670 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 34 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -34A, dl S /dt = 100A/µs, VR = 400V) 855 ns Q rr Reverse Recovery Charge (IS = -34A, dl S /dt = 100A/µs, VR = 400V) 30 µC dv/ Peak Diode Recovery dt dv/ 102 (Body Diode) 1 (VGS = 0V, IS = -34A) dt 1.2 Amps Volts 6 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP RθJC Junction to Case .30 RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 115.92mH, RG = 25Ω, Peak IL = 3.4A 5 IS = -34A di/dt = 100A/µs VR = 480V TJ = 125°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.30 0.9 0.25 0.7 0.20 0.5 Note: 0.10 0.3 0.05 0.1 0 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7147 Rev F 6-2006 0.35 0.15 t1 t2 SINGLE PULSE 0.05 10-5 10-4 °C/W Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves TC ( C) 0.183 ZEXT 0.117 Dissipated Power (Watts) 0.00828 0.174 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ID, DRAIN CURRENT (AMPERES) TJ ( C) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @