APT50GT120JU3

APT50GT120JU3 ISOTOP® Buck chopper Trench + Field Stop IGBT3 VCES = 1200V IC = 50A @ Tc = 80°C C Application  AC and DC motor control  Switched Mode Power Supplies G E A A E C G Features  Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated  ISOTOP® Package (SOT-227)  Very low stray inductance  High level of integration Benefits  Low conduction losses  Stable temperature behavior  Very rugged  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Easy paralleling due to positive TC of VCEsat  RoHS Compliant ISOTOP Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage TC = 25°C Max ratings 1200 75 50 100 ±20 347 TC = 80°C 27 TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation IFAV Maximum Average Forward Current Duty cycle=0.5 IFRMS RMS Forward Current (Square wave, 50% duty) 34 Unit V A V W A These Devices are sensitive to Electrostatic Discharge. Proper HandlingProcedures Should Be Followed. www.microsemi.com 1-8 APT50GT120JU3 – Rev 2 October, 2012 Symbol VCES IC1 IC2 ICM VGE PD APT50GT120JU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE, IC = 2mA VGE = ±20V, VCE = 0V Min Typ 1.4 1.7 2.0 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min 5.0 Max 5 2.1 Unit mA 6.5 500 V nA Max Unit V Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eon Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Resistive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 18 Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 50A RG = 18 www.microsemi.com Typ 3600 188 163 85 30 420 65 90 45 520 90 6.6 5.8 pF ns ns mJ 2-8 APT50GT120JU3 – Rev 2 October, 2012 Symbol Cies Coes Cres Td(on) Tr APT50GT120JU3 Chopper diode ratings and characteristics Symbol VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 1200V VR = 1200V VR = 200V IF=1A,VR=30V di/dt =100A/µs Min Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 31 IF = 30A VR = 800V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 370 500 5 12 660 3450 220 4650 37 Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Max 2.5 IF = 30A VR = 800V di/dt =1000A/µs 250 500 Tj = 125°C Unit V 32 Reverse Recovery Time IRRM Typ 2.0 2.3 1.8 µA pF ns A nC ns nC A Thermal and package characteristics Symbol Characteristic Min Typ IGBT Diode RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.36 1.1 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g Operating Frequency vs Collector Current 60 V CE=600V D=50% RG=18 Ω TJ =125°C 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 IC (A) www.microsemi.com 3-8 APT50GT120JU3 – Rev 2 October, 2012 Fmax, Operating Frequency (kHz) Typical IGBT Performance Curve APT50GT120JU3 Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=125°C VGE=17V 75 IC (A) 75 IC (A) TJ = 125°C TJ=25°C 50 25 VGE=15V 50 VGE=9V 25 0 0 0 1 2 VCE (V) 3 4 0 2 VCE (V) 3 4 20 VCE = 600V VGE = 15V RG = 18 Ω TJ = 125°C TJ=25°C 16 75 TJ=125°C E (mJ) IC (A) 1 Energy losses vs Collector Current Transfert Characteristics 100 50 12 4 0 0 6 7 8 9 10 11 Eon 8 25 5 Eoff 0 12 25 50 75 100 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area 12 120 Eon VCE = 600V VGE =15V IC = 50A TJ = 125°C 8 100 80 Eoff IC (A) 10 E (mJ) VGE=13V 6 60 4 40 2 20 0 VGE=15V TJ=125°C RG=18 Ω 0 5 10 15 20 25 Gate Resistance (ohms) 30 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 0.3 0.25 0.2 0.15 IGBT 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.1 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-8 APT50GT120JU3 – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.4 APT50GT120JU3 www.microsemi.com 5-8 APT50GT120JU3 – Rev 2 October, 2012 Typical Diode Performance Curve www.microsemi.com 6-8 APT50GT120JU3 – Rev 2 October, 2012 APT50GT120JU3 APT50GT120JU3 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Anode 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 7-8 APT50GT120JU3 – Rev 2 October, 2012 Dimensions in Millimeters and (Inches) APT50GT120JU3 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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