APT50MC120JCU2

APT50MC120JCU2 ISOTOP® Boost chopper SiC MOSFET + SiC chopper diode Power module K D VDSS = 1200V RDSon = 34mΩ max @ Tj = 25°C ID = 71A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • - G • S K S G - D ISOTOP® • • • SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Tc = 25°C Max ratings 1200 71 54 140 -10/+25 34 300 Unit V A V mΩ W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APT50MC120JCU2 – Rev 1 June, 2013 Symbol VDSS APT50MC120JCU2 Electrical Characteristics Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS(on) Drain – Source on Resistance VGS(th) IGSS Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V , VDS = 1200V Tj = 25°C VGS = 20V ID = 50A Tj = 150°C VGS = VDS, ID = 1mA VGS = 20 V, VDS = 0V Min 1.9 Typ 12 25 43 2.3 Max 100 34 63 Unit µA mΩ 0.5 V µA Max Unit Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 1000V f = 1MHz Fall Time Eon Turn on Energy Inductive Switching VGS = -5/+20V VBus = 600V ID = 50A RG = 20Ω Eoff Turn off Energy RthJC Junction to Case Thermal Resistance pF 32 nC 63 21 VGS = -2/+20V VBus = 800V ID = 50A RL = 16Ω ; RG = 20Ω Turn-off Delay Time Typ 2980 220 23 179 VGS = 20V VBus = 800V ID =50A Rise Time Tf Min 19 ns 50 30 Tj = 150°C 1.1 mJ Tj = 150°C 0.6 0.42 °C/W Typ Max Unit V 64 112 20 1.6 2.3 400 2000 SiC chopper diode ratings and characteristics IRM IF Maximum Reverse Leakage Current Test Conditions VR=1200V DC Forward Current Min 1200 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 1200V di/dt =1000A/µs 160 C Total Capacitance f = 1MHz, VR = 200V 192 f = 1MHz, VR = 400V 138 RthJC Junction to Case Thermal Resistance www.microsemi.com µA A 1.8 3 V nC pF 0.8 °C/W 2-6 APT50MC120JCU2 – Rev 1 June, 2013 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APT50MC120JCU2 Thermal and package characteristics Symbol RthJA VISOL TSTG TJ TJOP Torque Wt Characteristic Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range SiC MOSFET Operating junction temperature range SiC diode Recommended junction temperature under switching conditions Min Typ 2500 -40 -40 -40 Unit °C/W V 150 150 175 TJmax -25 1.1 -40 Terminals and mounting screws Package Weight Max 20 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) Drain Cathode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Dimensions in Millimeters and (Inches) Gate Typical Mosfet Performance Curve Gate Charge vs Gate to Source Voltage 20 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 10000 C, Capacitance (pF) Ciss 1000 Coss 100 Crss 10 0 200 400 600 800 1000 VGS = 20V I D = 50A VDS = 800V 16 12 8 4 0 0 VDS , Drain to Source Voltage (V) 20 40 60 80 100 120 140 160 180 Gate Charge (nC) Frequency (kHz) 600 VBUS=600V D=50% R G =20Ω TJ=1 50 °C TC =75 °C ZVS 500 400 300 ZCS 200 100 Hard switching 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) www.microsemi.com 3-6 APT50MC120JCU2 – Rev 1 June, 2013 Operating Frequency vs Drain Current 700 APT50MC120JCU2 Output Characteristics Output Characteristics 100 100 TJ=1 50 °C ID, Drain Current (A) ID, Drain Current (A) TJ=2 5 °C 80 20 60 VGS=15V 40 20 80 20 60 40 20 0 0 1 2 3 4 VGS=15V 0 5 0 2 3 4 VGS=20V 1.5 1.25 1 40 TJ=150°C 30 20 0.75 75 100 125 7 50 TJ=25°C 10 50 6 60 1.75 25 5 Transfert Characteristics Normalized RDS(on) vs. Temperature 0 150 0 TJ, Junction Temperature (°C) 2 4 6 8 10 VGS , Gate to Source Voltage (V) Switching energy vs Rg switching energy vs current 2 2.5 Eon 1 Eoff 0.5 VGS=-5/20V I D= 50A VBUS = 600V TJ = 150 °C 30 40 50 1.5 Eon 1 Eoff 0.5 0 20 VGS=-5/20V R G =20Ω VBUS= 600V TJ = 150 °C 2 Losses (mJ) 1.5 Losses (mJ) 1 VDS, Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance VDS, Drain to Source Voltage (V) 0 60 0 20 Gate resistance (ohm) 40 60 80 100 Current (A) 0.4 D = 0.9 0.35 0.3 0.25 0.2 0.15 0.7 0.5 0.3 0.1 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APT50MC120JCU2 – Rev 1 June, 2013 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 APT50MC120JCU2 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 D = 0.9 0.6 0.7 0.5 0.4 0.3 0.2 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 200 30 TJ=75°C 20 TJ=125°C 10 TJ=175°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 150 TJ=175°C 100 TJ=75°C TJ=125°C 50 TJ=25°C 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 1400 C, Capacitance (pF) 1200 1000 800 600 400 200 1 10 100 1000 VR Reverse Voltage ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 5-6 APT50MC120JCU2 – Rev 1 June, 2013 0 APT50MC120JCU2 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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