APTGF25H120T3G

APTGF25H120T3G Full - Bridge NPT IGBT Power Module VCES = 1200V IC = 25A @ Tc = 80°C Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control 28 27 26 25 Features  Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design  Kelvin emitter for easy drive  Very low stray inductance  High level of integration  Internal thermistor for temperature monitoring 20 19 18 23 22 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Easy paralleling due to positive TC of VCEsat  Each leg can be easily paralleled to achieve a phase leg of twice the current capability  RoHS compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 40 25 100 ±20 208 Tj = 125°C 50A@1150V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGF25H120T3G – Rev 3 October, 2012 Symbol VCES APTGF25H120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min Tj = 25°C Tj = 125°C T j = 25°C VGE =15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Typ VGE = 0V VCE = 1200V 2.5 3.2 4.0 4 Max 250 500 3.7 Unit µA V 6 400 V nA Max Unit Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 600V IC =25A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 25A RG = 22 Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 25A RG = 22 VGE = 15V Tj = 125°C VBus = 600V IC = 25A Tj = 125°C RG = 22 Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 1650 250 110 160 10 70 60 50 305 pF nC ns 30 60 50 346 ns 40 3.5 mJ 1.5 Reverse diode ratings and characteristics VRRM IRM IF Test Conditions Min VR=1200V Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ IF = 25A VGE = 0V IF = 25A VR = 600V di/dt =1000A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C 100 250 Tc = 80°C Tj = 25°C Tj = 125°C 25 2.1 1.9 Tj = 25°C 95 Tj = 125°C 190 Tj = 25°C 2.1 Tj = 125°C Tj = 25°C Tj = 125°C 4.5 0.75 1.5 µA A V ns µC mJ 2-7 APTGF25H120T3G – Rev 3 October, 2012 Symbol Characteristic APTGF25H120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT  Min Typ 50 3952 Max Unit k K Min Typ Max 0.6 1.2 Unit R25 T: Thermistor temperature   1 1  RT: Thermistor value at T   exp  B25 / 85   T25 T   Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 4000 -40 -40 -40 2 °C/W V 150 125 100 3 110 °C N.m g See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTGF25H120T3G – Rev 3 October, 2012 SP3 Package outline (dimensions in mm) APTGF25H120T3G Typical Performance Curve Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 70 50 TJ=125°C 40 30 20 10 16 TJ=25°C 12 8 TJ=125°C 4 0 0 1 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) 0 8 VGE, Gate to Emitter Voltage (V) Transfer Characteristics 120 250µs Pulse Test < 0.5% Duty cycle 100 80 60 40 TJ=125°C 20 TJ=25°C 0 2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V) TJ = 125°C 250µs Pulse Test < 0.5% Duty cycle 8 7 Ic=50A 6 5 Ic=25A 4 3 2 Ic=12.5A 1 0 9 10 11 12 13 14 IC = 25A TJ = 25°C 16 2 2.5 3 3.5 VCE=240V VCE=600V 14 12 10 VCE=960V 8 6 4 2 0 0 15 16 6 30 60 90 120 150 180 On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 5 3 Ic=12.5A 2 1 0 -50 Breakdown Voltage vs Junction Temp. 60 Ic, DC Collector Current (A) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 Ic=50A Ic=25A 4 VGE, Gate to Emitter Voltage (V) Collector to Emitter Breakdown Voltage (Normalized) 1.5 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 9 1 Gate Charge 18 15 VCE, Collector to Emitter Voltage (V) 0 0.5 VCE, Collector to Emitter Voltage (V) -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 4-7 APTGF25H120T3G – Rev 3 October, 2012 0 Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle TJ=25°C 60 VCE, Collector to Emitter Voltage (V) Output Characteristics (VGE=10V) 20 Ic, Collector Current (A) Ic, Collector Current (A) 80 APTGF25H120T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V RG = 22Ω 70 65 VGE = 15V 60 55 50 5 15 25 35 45 400 VGE=15V, TJ=125°C 350 300 250 200 55 5 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 600V RG = 22Ω 120 45 tf, Fall Time (ns) tr, Rise Time (ns) 35 45 55 Current Fall Time vs Collector Current 80 VGE=15V 40 TJ = 125°C 40 35 TJ = 25°C 30 25 5 15 25 35 45 VCE = 600V, VGE = 15V, RG = 22Ω 20 55 5 ICE, Collector to Emitter Current (A) VCE = 600V RG = 22Ω 8 TJ=125°C, VGE=15V 6 TJ=25°C, VGE=15V 4 2 0 55 4 VCE = 600V VGE = 15V RG = 22Ω 3 TJ = 125°C 2 TJ = 25°C 1 0 5 15 25 35 45 ICE, Collector to Emitter Current (A) 55 5 Switching Energy Losses vs Gate Resistance 15 25 35 45 ICE, Collector to Emitter Current (A) 55 Reverse Bias Safe Operating Area 60 VCE = 600V VGE = 15V TJ= 125°C Eon, 25A IC, Collector Current (A) 4 15 25 35 45 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 10 Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 25 50 0 Switching Energy Losses (mJ) 15 ICE, Collector to Emitter Current (A) 160 5 VGE=15V, TJ=25°C VCE = 600V RG = 22Ω 3 Eoff, 25A 2 1 0 50 40 30 20 10 0 0 10 20 30 40 50 60 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Gate Resistance (Ohms) www.microsemi.com 5-7 APTGF25H120T3G – Rev 3 October, 2012 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 75 APTGF25H120T3G Fmax, Operating Frequency (kHz) Cies 1000 Coes 100 Cres 10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) Thermal Impedance (°C/W) 0.5 100 80 ZVS VCE = 600V D = 50% RG = 22Ω TJ = 125°C TC= 75°C 60 40 Hard switching ZCS 20 50 0 0 10 20 30 IC, Collector Current (A) 40 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 Operating Frequency vs Collector Current 120 0.9 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com 6-7 APTGF25H120T3G – Rev 3 October, 2012 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 APTGF25H120T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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