APTGL90DDA120T3G

APTGL90DDA120T3G VCES = 1200V IC = 90A @ Tc = 80°C Dual Boost chopper Trench + Field Stop IGBT4 Power module 13 14 CR1 Application  AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction CR2 22 7 23 8 Q1 Q2 26 4 27 3 29 15 Features  Trench + Field Stop IGBT 4 - Low voltage drop - Low leakage current - Low switching losses - Low leakage current - RBSOA and SCSOA rated  Kelvin emitter for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring 30 31 32 R1 16 Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Easy paralleling due to positive TC of VCEsat  Each leg can be easily paralleled to achieve a single boost of twice the current capability  RoHS compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … All ratings @ Tj = 25°C unless otherwise specified IC ICM VGE PD RBSOA Parameter Collector - Emitter Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 110 90 150 ±20 385 150A @ 1150V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-6 APTGL90DDA120T3G – Rev 2 Symbol VCES November, 2017 Absolute maximum ratings (per IGBT) APTGL90DDA120T3G Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V ; VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 150°C VGE = VCE, IC = 3 mA VGE = 20 V, VCE = 0V Min Typ 5 1.85 2.25 5.8 Test Conditions Min Typ Max 250 2.25 Unit µA 6.5 600 V nA Max Unit V Dynamic Characteristics (per IGBT) Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=75A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A RG = 2.2 Inductive Switching (150°C) VGE = ±15V VBus = 600V IC = 75A RG = 2.2 TJ = 25°C VGE = ±15V VBus = 600V TJ = 150°C IC = 75A TJ = 25°C RG = 2.2 TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 4.4 0.29 0.24 nF 0.57 µC 130 20 300 ns 45 150 35 ns 350 80 3.3 8.5 4.2 7.2 mJ 300 A Junction to Case Thermal Resistance mJ 0.39 °C/W Chopper diode ratings and characteristics (per diode) Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Test Conditions Min Typ VR=1200V Tc = 80°C IF = 100A IF = 150A IF = 100A IF = 100A VR = 800V di/dt =200A/µs Tj = 125°C 100 2.4 2.7 1.8 Tj = 25°C 385 Tj = 125°C Tj = 25°C Tj = 125°C 480 1055 5240 Junction to Case Thermal Resistance Max 1200 100 3 V ns nC 0.55 www.microsemi.com Unit V µA A November, 2017 VF Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current °C/W 2-6 APTGL90DDA120T3G – Rev 2 Symbol VRRM IRM IF APTGL90DDA120T3G Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 175 TJmax -25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp  B25 / 85    T T  25   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGL90DDA120T3G – Rev 2 November, 2017 Package outline (dimensions in mm) APTGL90DDA120T3G Typical Performance Curve Output Characteristics (VGE=15V) 150 Output Characteristics 150 100 100 TJ=150°C IC (A) IC (A) VGE=19V TJ=25°C 75 VGE=15V 75 50 50 25 25 0 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 150 20 E (mJ) 75 2 VCE (V) VCE = 600V VGE = 15V RG = 2.2 Ω TJ = 150°C 25 100 1 3 4 Energy losses vs Collector Current 30 TJ=25°C 125 IC (A) TJ = 150°C 125 125 Eon 15 10 50 TJ=150°C Eoff 5 25 0 0 5 6 7 8 9 10 11 12 0 13 25 50 75 100 125 150 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 20 160 Eon 120 VCE = 600V VGE =15V IC = 75A TJ = 150°C 12 IC (A) E (mJ) 16 Eoff 8 80 VGE=15V TJ=150°C RG=2.2 Ω 40 4 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.2 0.15 0.1 0.05 IGBT 0.7 November, 2017 0.35 0.9 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGL90DDA120T3G – Rev 2 Thermal Impedance (°C/W) 0.4 APTGL90DDA120T3G Forward Characteristic of diode 200 VCE=600V D=50% RG=2.2 Ω TJ=150°C Tc=75°C 100 80 IF, Forward Current (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 40 ZCS 20 Hard switching ZVS 175 125 100 40 75 TJ=25°C 50 25 0 0 20 TJ=125°C 150 60 80 100 0 120 0.5 1 1.5 2 2.5 3 VF, Anode to Cathode Voltage (V) IC (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.3 0.9 Diode 0.7 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds November, 2017 0.5 www.microsemi.com 5-6 APTGL90DDA120T3G – Rev 2 Thermal Impedance (°C/W) 0.6 APTGL90DDA120T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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