APTM100DSK35T3G

APTM100DSK35T3G VDSS = 1000V RDSon = 350m typ @ Tj = 25°C ID = 22A @ Tc = 25°C Dual Buck chopper MOSFET Power Module Application  AC and DC motor control  Switched Mode Power Supplies 13 14 Q1 Q2 Features  Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring 11 18 22 7 19 10 23 CR1 29 15 30 8 CR2 31 32 R1 16 Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Each leg can be easily paralleled to achieve a single buck of twice the current capability  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (per MOSFET) IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 22 17 88 ±30 420 390 25 50 3000 Unit V A December, 2017 ID Parameter Drain - Source Voltage V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–7 APTM100DSK35T3G– Rev 3 Symbol VDSS APTM100DSK35T3G Electrical Characteristics (per MOSFET) Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 1000V VGS = 10V, ID = 11A VGS = VDS, ID = 2.5mA VGS = ±30V, VDS = 0V Min Typ 350 3 Max 100 420 5 ±150 Unit µA m V nA Max Unit Dynamic Characteristics (per MOSFET) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 5.2 0.88 0.16 nF 186 VGS = 10V VBus = 500V ID = 22A 24 nC 122 18 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 22A RG = 5 12 ns 155 40 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω 900 µJ 623 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω 1423 µJ 779 0.32 °C/W Max 1000 250 Unit V µA A Chopper Diode ratings and characteristics (per diode) Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Test Conditions Min Typ VR=1000V Tc = 70°C IF = 30A IF = 60A IF = 30A IF = 30A VR = 667V di/dt=200A/µs Tj = 125°C 30 1.9 2.2 1.7 Tj = 25°C 290 Tj = 125°C 390 Tj = 25°C 670 Tj = 125°C 2350 Junction to Case Thermal Resistance 2.3 V ns nC 1.2 www.microsemi.com December, 2017 VF Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current °C/W 2–7 APTM100DSK35T3G– Rev 3 Symbol VRRM IRM IF APTM100DSK35T3G Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 150 TJmax - 25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1  RT: Thermistor value at T   1 exp B25 / 85     T25 T   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM100DSK35T3G– Rev 3 December, 2017 Package outline (dimensions in mm) APTM100DSK35T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 VGS=15, 10&8V 50 7V 40 6.5V 30 6V 20 5.5V 10 0 5 10 15 20 25 60 50 40 30 TJ=25°C 20 10 5V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 70 ID, Drain Current (A) TJ=125°C 30 0 1.2 VGS=10V VGS=20V 1 3 4 5 6 7 8 9 25 Normalized to VGS=10V @ 11A 1.1 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) 0.9 0.8 20 15 10 5 0 0 10 20 30 40 50 60 25 ID, Drain Current (A) 50 75 100 125 December, 2017 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM100DSK35T3G– Rev 3 ID, Drain Current (A) 60 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=11A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100 1.2 100µs limited by RDSon 1.1 ID, Drain Current (A) 1.0 0.9 0.8 0.7 0.6 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage 10000 Ciss Coss 1000 Crss 100 0 10 20 30 40 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 10 100 1000 VDS, Drain to Source Voltage (V) 14 ID=22A TJ=25°C 12 VDS=200V VDS=500V 10 VDS=800V 8 6 4 2 0 50 VDS, Drain to Source Voltage (V) 0 50 100 150 200 250 December, 2017 VGS(TH), Threshold Voltage (Normalized) 25 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) C, Capacitance (pF) 0 Gate Charge (nC) www.microsemi.com 5–7 APTM100DSK35T3G– Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100DSK35T3G APTM100DSK35T3G Delay Times vs Current Rise and Fall times vs Current 80 180 td(off) VDS=670V RG=5Ω TJ=125°C L=100µH 70 140 60 120 tr and tf (ns) VDS=670V RG=5Ω TJ=125°C L=100µH 100 80 60 40 50 40 tr 30 20 td(on) 10 20 0 0 0 10 20 30 40 50 0 10 ID, Drain Current (A) 50 4 Eon VDS=670V RG=5Ω TJ=125°C L=100µH 2 1.5 Switching Energy (mJ) Eoff 1 0.5 0 VDS=670V ID=22A TJ=125°C L=100µH 3.5 3 2.5 Eoff 2 Eon 1.5 Eoff 1 0.5 0 0 10 20 30 40 50 0 ID, Drain Current (A) 5 10 15 20 25 30 35 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 250 225 200 ZVS 175 150 125 100 75 ZCS VDS=670V D=50% RG=5Ω TJ=125°C TC=75°C 50 25 0 5 8 Hard switching 10 13 15 18 ID, Drain Current (A) 20 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 December, 2017 Switching Energy (mJ) 20 30 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 2.5 Frequency (kHz) tf VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM100DSK35T3G– Rev 3 td(on) and td(off) (ns) 160 APTM100DSK35T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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