APTM120H140FT1G

APTM120H140FT1G VDSS = 1200V RDSon = 1.4 typ @ Tj = 25°C ID = 8A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 6 2 1 Q2 Q4 7 9 8 11 10 NTC 12 Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control Features  Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged  Very low stray inductance - Symmetrical design  Internal thermistor for temperature monitoring  High level of integration Benefits        Pins 3/4 must be shorted together Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1200 8 6 50 ±30 1.68 208 7 Unit V A V  W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM120H140FT1G – Rev 1 October, 2012 Symbol VDSS APTM120H140FT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 7A VGS = VDS, ID = 1mA VGS = ±30 V Min 3 Typ 1.4 4 Max 250 1000 1.68 5 ±100 Unit Max Unit µA  V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 3812 350 44 pF 145 VGS = 10V VBus = 600V ID = 7A nC 24 70 26 Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 7A RG = 4.7 15 ns 85 24 Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 8 6 1 25 250 Tj = 125°C 520 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 7A IS = - 7A VR = 100V diS/dt = 100A/µs Tj = 25°C 1.12 Tj = 125°C 3.03 Unit A V V/ns ns µC www.microsemi.com 2–7 APTM120H140FT1G – Rev 1 October, 2012  dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS  - 7A di/dt  1000A/µs VDD  800V Tj  125°C APTM120H140FT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.6 150 125 100 3 80 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT  Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature   1 1  RT: Thermistor value at T exp  B25 / 85     T25 T   See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM120H140FT1G – Rev 1 October, 2012 SP1 Package outline (dimensions in mm) APTM120H140FT1G Typical Performance Curve Low Voltage Output Characteristics Low Voltage Output Characteristics 20 12 ID, Drain Current (A) TJ=25°C 15 10 TJ=125°C 5 0 TJ=125°C VGS=6, 7, 8 &9V 10 8 5V 6 4 4.5V 2 0 0 5 10 15 20 0 5 10 3 VGS=10V ID=7A 20 25 30 2 1.5 1 0.5 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 8 6 TJ=125°C 4 TJ=25°C 2 0 25 50 75 100 125 150 0 1 2 3 4 5 Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 10000 12 C, Capacitance (pF) 10 Ciss VDS=240V ID=7A TJ=25°C VDS=600V 8 VDS=960V 6 6 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) VGS, Gate to Source Voltage 15 Transfert Characteristics Normalized RDS(on) vs. Temperature 2.5 10 VDS, Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance VDS, Drain to Source Voltage (V) 4 2 1000 Coss 100 Crss 10 0 0 40 80 120 160 Gate Charge (nC) 0 50 100 150 200 VDS, Drain to Source Voltage (V) www.microsemi.com 4–7 APTM120H140FT1G – Rev 1 October, 2012 ID, Drain Current (A) VGS=10V APTM120H140FT1G ISD, Reverse Drain Current (A) Drain Current vs Source to Drain Voltage 25 20 TJ=125°C 15 10 5 TJ=25°C 0 0 0.2 0.4 0.6 0.8 1 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.5 0.4 0.3 0.9 0.7 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5–7 APTM120H140FT1G – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.7 APTM120H140FT1G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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