AT9919K7-G

AT9919 Hysteretic Buck High-Brightness LED Driver with High-Side Current Sensing Features General Description • • • • • • • The AT9919 is a PWM controller IC designed to drive high-brightness LEDs using a buck topology. It operates from an input voltage of 4.5 VDC to 40 VDC and employs hysteretic control with a high-side current sense resistor to set the constant output current. Hysteretic Control with High-side Current Sensing Wide Input Voltage Range: 4.5V to 40V >90% Efficiency Typical ±5% LED Current Accuracy Up to 2 MHz Switching Frequency Adjustable Constant LED Current Analog or Pulse-With Modulation (PWM) Control Signal for PWM Dimming • Overtemperature Protection • –40ºC to +125ºC Operating Temperature Range The operating frequency range can be set by selecting the proper inductor. Operation at high switching frequency is possible since the hysteretic control maintains accuracy even at high frequencies. This permits the use of small inductors and capacitors, minimizing space and cost in the overall system. LED brightness control is achieved with PWM dimming from an analog or PWM input signal. Unique PWM circuitry allows true constant color with a high dimming range. The dimming frequency is programmed using a single external capacitor. Applications • LED Lighting Applications The AT9919 comes in a small, 8-lead DFN package and is qualified for LED lighting applications. Package Type 8-lead DFN (Top View) CS 1 VIN 2 8 GATE 7 GND GND RAMP 3 6 VDD ADIM 4 5 DIM See Table 2-1 for pin information.  2016 Microchip Technology Inc. DS20005595A-page 1 AT9919 Functional Block Diagram VIN VDD REGULATOR + - CS CURRENT SENSE COMPARATOR BANDGAP REF GATE DRIVER GATE + DIM UVLO COMPARATOR GND RAMP ADIM DS20005595A-page 2 PWM RAMP 0.1~1.9V + AT9919  2016 Microchip Technology Inc. AT9919 Typical Application Circuit RSENSE L CIN VIN CS RAMP 0 - 2.0V ADIM DIM VDD GATE GND AT9919   2016 Microchip Technology Inc. DS20005595A-page 3 AT9919 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† VIN and CS to GND ...................................................................................................................................–0.3V to +45V VDD, GATE, RAMP, DIM, ADIM to GND......................................................................................................–0.3V to +6V CS to VIN .....................................................................................................................................................–1V to +0.3V Operating Temperature Range............................................................................................................. –40°C to +125°C Junction Temperature.............................................................................................................................................150°C Storage Temperature Range ...................................................................................................................–65°C to 150°C Continuous Power Dissipation (TA = +25°C) .......................................................................................................... 1.6W † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Electrical Specifications: VIN = 12V, VDIM = VDD, VRAMP = GND, CVDD = 1 µF, RCS = 0.5Ω, TA = TJ = –40ºC to +125ºC (Note 1) unless otherwise noted. Parameter Sym. Min. Input DC Supply Voltage Range Internally Regulated Voltage Supply Current Shutdown Supply Current VIN VDD IIN IIN, SDN Current Limit IIN, LIM fOSC 4.5 4.5 — — — — — — — — — 30 8 — 40 5.5 1.5 900 — — 2 MHz UVLO — — 4.5 V VDD rising UVLOHYST — 500 — mV VDD falling VCS(HI) VCS(LO) VCS(AVG) 198 147 186 230 170 200 257 195 214 mV mV mV tDPDH — 70 — ns tDPDL — 70 — ns ICS — — 1 µA (VIN – VCS) rising (VIN – VCS) falling VCS(AVG) = 0.5VCS(HI) + 0.5VCS(LO) Falling edge of  VIN – VCS = VRS(LO) – 70 mV Rising edge of VIN – VCS = VRS(HI) + 70 mV VIN – VCS = 200 mV VCS(HYST) — 56 80 mV VIH VIL 2.2 — — — — 0.7 V V Turn-on Time tON — 100 — ns Turn-off Time tOFF — 100 — ns Oscillator Frequency VDD Undervoltage Lockout Threshold VDD Undervoltage Lockout Hysteresis SENSE COMPARATOR Sense Voltage Threshold High Sense Voltage Threshold Low Average Reference Voltage Propagation Delay to Output High Propagation Delay to Output Low Current Sense Input Current Current Sense Threshold  Hysteresis DIM INPUT Pin DIM Input High Voltage Pin DIM Input Low Voltage Note 1: 2: Typ. Max. Unit V V mA µA mA Conditions DC input voltage VIN = 6V to 40V GATE open DIM < 0.7V VIN = 4.5V, VDD = 0V VIN = 4.5V, VDD = 4V DIM rising edge to VGATE = 0.5 x VDD, CGATE = 2 nF DIM falling edge to VGATE = 0.5 x VDD, CGATE = 2 nF Limits obtained by design and characterization. For design guidance only DS20005595A-page 4  2016 Microchip Technology Inc. AT9919 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: VIN = 12V, VDIM = VDD, VRAMP = GND, CVDD = 1 µF, RCS = 0.5Ω, TA = TJ = –40ºC to +125ºC (Note 1) unless otherwise noted. Parameter Sym. Min. GATE DRIVER GATE Current, Source IGATE GATE Current, Sink GATE Output Rise Time TRISE GATE Output Fall Time TFALL GATE High Output Voltage VGATE(HI) GATE Low Output Voltage VGATE(LO) OVERTEMPERATURE PROTECTION Over Temperature Trip Limit TOT Temperature Hysteresis ∆THYST ANALOG CONTROL OF PWM DIMMING Typ. Max. Conditions 0.3 0.7 — — VDD – 0.5 — 0.5 1 40 17 — — — — 55 25 — 0.5 A A ns ns V V VGATE = GND (Note 2) VGATE = VDD (Note 2) CGATE = 2 nF CGATE = 2 nF IGATE = 10 mA IGATE = –10 mA 128 — 140 60 — — ºC ºC Note 2 Note 2 Hz CRAMP = 47 nF CRAMP = 10 nF 130 — 550 — — 0.1 RAMP Threshold, Low VLOW RAMP Threshold, High VHIGH 1.8 — –35 — ADIM Offset Voltage VOS Note 1: Limits obtained by design and characterization. 2: For design guidance only Dimming Frequency Unit 300 1250 — 2.1 +35 fRAMP V V mV TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Operating Temperature TA –40 — +125 °C Junction Temperature TJ — — +150 °C Storage Temperature TS –65 — +150 °C JA — +37 — °C/W Conditions TEMPERATURE RANGE PACKAGE THERMAL RESISTANCE 8-lead DFN  2016 Microchip Technology Inc. DS20005595A-page 5 AT9919 2.0 PIN DESCRIPTION The details on the pins of AT9919 are listed on Table 2-1. Refer to Package Type for the location of pins. TABLE 2-1: PIN FUNCTION TABLE Pin Number Pin Name 1 CS Current sense input. Senses LED string current. 2 VIN Input voltage 4.5V to 40V DC 3 RAMP 4 ADIM 5 DIM PWM signal input 6 VDD Internally regulated supply voltage. Connect a capacitor from VDD to ground. 7 GND Device ground 8 GATE Drives GATE of the external MOSFET TAB GND Must be wired to pin 7 on PCB DS20005595A-page 6 Description Analog PWM dimming ramp output Analog 0V~2V signal input for analog control of PWM dimming  2016 Microchip Technology Inc. AT9919 3.0 APPLICATION INFORMATION 3.1 General Description The AT9919 is a step-down constant-current high-brightness LED (HB LED) driver. The device operates from a 4.5V to 40V input voltage range and provides the gate drive output to an external N-channel MOSFET. A high-side current sense resistor sets the output current, and a dedicated PWM dimming input (DIM) allows for a wide range of dimming duty ratios. The PWM dimming could also be achieved by applying a DC voltage between 0V and 2V to the analog dimming input (ADIM). In this case, the dimming frequency can be programmed using a single capacitor at the RAMP pin. The high-side current sensing scheme minimizes the number of external components while delivering LED current with a ±8% accuracy, using a 1% sense resistor. 3.2 Undervoltage Lockout (UVLO) The AT9919 includes a 3.7V UVLO with 500 mV hysteresis. When VIN falls below 3.7V, GATE goes low, turning off the external N-channel MOSFET. GATE goes high once VIN is 4.5V or higher. When the analog control of PWM dimming feature is not used, RAMP must be wired to GND and ADIM should be connected to VDD. One possible application of the ADIM feature may include protection of the LED load from overtemperature by connecting an NTC thermistor to ADIM as shown in Figure 3-1. VDD AT9919 ADIM NTC GND FIGURE 3-1: using ADIM Pin. 3.6 Overtemperature Protection Setting LED Current with the External Resistor (RSENSE) VDD is the output of a 5V regulator capable of sourcing 8 mA. Bypass VDD to GND with a 1 µF capacitor. The output current in the LED is determined by the external current sense resistor (RSENSE) connected between VIN and CS. Disregarding the effect of the propagation delays, the sense resistor can be calculated as seen in Equation 3-2. 3.4 EQUATION 3-2: 3.3 5V Regulator DIM Input The AT9919 allows dimming with a PWM signal at the DIM input. A logic level below 0.7V at DIM forces the GATEOUTPUT low, turning off the LED current. To turn on the LED current, the logic level at DIM must be at least 2.2V. 3.5 ADIM and RAMP Inputs The PWM dimming scheme can also be implemented by applying an analog control signal to the ADIM pin. If an analog control signal of 0V~2.0V is applied to ADIM, the device compares this analog input to a voltage ramp to pulse width modulate the LED current. Connecting an external capacitor to RAMP programs the PWM dimming ramp frequency. See Equation 3-1. V RS  HI  + V RS  LO  200mV 1 R SENSE   ---   --------------------------------------------- = ---------------- 2   I LED I LED 3.7 Selecting Buck Inductor (L) The AT9919 regulates the LED output current using an input comparator with hysteresis. (See Figure 3-2.) As the current through the inductor ramps up, and the voltage across the sense resistor reaches the upper threshold, the voltage at GATE goes low, turning off the external MOSFET. The MOSFET turns on again when the inductor current ramps down through the freewheeling diode until the voltage across the sense resistor equals the lower threshold. EQUATION 3-1: 1 f PWM = ----------------------------------------C RAMP  120k The DIM and ADIM inputs can be used simultaneously. In such case, a fPWM(MAX) lower than the frequency of the dimming signal at DIM must be selected. The smaller dimming duty cycle of ADIM and DIM will determine the GATE signal.  2016 Microchip Technology Inc. DS20005595A-page 7 AT9919 tDPDL VRS(HI) RSENSE TS = 1 fS ILED VRS(LO) RSENSE tDPDH ΔI ΔIO t VDIM t FIGURE 3-2: Inductor Current Waveform. Equation 3-3 shows how to determine the inductor value for a desired operating frequency (fS). EQUATION 3-3:  V IN – V OUT   V OUT  V IN – V OUT   t DPDL V OUT t DPDH L = ------------------------------------------------------ – ------------------------------------------------------- – -----------------------------f S V IN I O I O I O Where: V RS  HI  – V RS  LO  I O = -------------------------------------------R SENSE and tDPDL and tDPDH are the propagation delays.  Note that the current ripple (∆I) in the inductor (L) is greater than ∆IO. The current ripple in the inductor (L) can be calculated with Equation 3-4. EQUATION 3-4:  V IN – V OUT   t DPDL V OUT t DPDH I = I O + ------------------------------------------------------- + -----------------------------L L For proper inductor selection, note that the maximum switching frequency occurs at the highest VIN and VOUT = VIN/2. 3.8 MOSFET Selection MOSFET selection is based on the maximum input operating voltage VIN, output current ILED and operating switching frequency. Choose a MOSFET that has a higher breakdown voltage than the maximum operation voltage, low RDS(ON) and low total charge for DS20005595A-page 8 better efficiency. MOSFET threshold voltage must be adequate when operated at the low end of the input voltage operating range. 3.9 Freewheeling Diode Selection The forward voltage of the freewheeling diode should be as low as possible for better efficiency. A Schottky diode is a good choice as long as the breakdown voltage is high enough to withstand the maximum operating voltage. The forward current rating of the diode must be at least equal to the maximum LED current. 3.10 LED Current Ripple The LED current ripple is equal to the inductor current ripple. In cases when a lower LED current ripple is needed, a capacitor can be placed across the LED terminals.  2016 Microchip Technology Inc. AT9919 3.11 PCB Layout Guidelines Careful PCB layout is critical to achieving low switching losses and stable operation. Use a multilayer board whenever possible for better noise immunity. Minimize ground noise by connecting high-current ground returns, the input bypass capacitor ground lead and the output filter ground lead to a single point (star ground configuration). The fast di/dt loop is composed of the input capacitor CIN, the freewheeling diode and the MOSFET. To minimize noise interaction, this loop area should be as small as possible. Place RSENSE as close as possible to the input filter and VIN. For better noise immunity, a Kelvin connection is strongly recommended between CS and RSENSE. Connect the exposed tab of the IC to a large area ground plane for improved power dissipation.  2016 Microchip Technology Inc. DS20005595A-page 9 AT9919 4.0 PACKAGING INFORMATION 4.1 Package Marking Information Legend: XX...X Y YY WW NNN e3 * Note: DS20005595A-page 10 8-lead DFN Example XXXX YYWW NNN 9919 1612 373 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo.  2016 Microchip Technology Inc. AT9919 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.  2016 Microchip Technology Inc. DS20005595A-page 11 AT9919 NOTES: DS20005595A-page 12  2016 Microchip Technology Inc. AT9919 APPENDIX A: REVISION HISTORY Revision A (October 2016) • Converted Supertex Doc# DSFP-AT9919 to Microchip DS20005595A. • Changed packaging quantity of 8-lead DFN from 3000/Reel to 3300/Reel. • Made minor text changes throughout the document.  2016 Microchip Technology Inc. DS20005595A-page 13 AT9919 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. PART NO. Device XX - Package Options X - Environmental X Media Type Device: AT9919 = Hysteretic Buck High-Brightness LED Driver with High-Side Current Sensing Package: K7 = 8-lead (3x3) DFN Environmental: G = Lead (Pb)-free/RoHS-compliant Package Media Type: (blank) = 3300/Reel for a K7 Package DS20005595A-page 14 Example: a) AT9919K7-G: Hysteretic Buck High-Brightness LED Driver with High-Side Current Sensing, 8-lead (3x3) DFN Package, 3300/Reel  2016 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 ==  2016 Microchip Technology Inc. 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ISBN: 978-1-5224-0992-2 DS20005595A-page 15 Worldwide Sales and Service AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 Germany - Dusseldorf Tel: 49-2129-3766400 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Hong Kong Tel: 852-2943-5100 Fax: 852-2401-3431 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8569-7000 Fax: 86-10-8528-2104 Austin, TX Tel: 512-257-3370 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 China - Chongqing Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Cleveland Independence, OH Tel: 216-447-0464 Fax: 216-447-0643 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Novi, MI Tel: 248-848-4000 Houston, TX Tel: 281-894-5983 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 New York, NY Tel: 631-435-6000 San Jose, CA Tel: 408-735-9110 Canada - Toronto Tel: 905-695-1980 Fax: 905-695-2078 China - Dongguan Tel: 86-769-8702-9880 China - Guangzhou Tel: 86-20-8755-8029 China - Hangzhou Tel: 86-571-8792-8115 Fax: 86-571-8792-8116 China - Hong Kong SAR Tel: 852-2943-5100 Fax: 852-2401-3431 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8864-2200 Fax: 86-755-8203-1760 India - Pune Tel: 91-20-3019-1500 Japan - Osaka Tel: 81-6-6152-7160 Fax: 81-6-6152-9310 Japan - Tokyo Tel: 81-3-6880- 3770 Fax: 81-3-6880-3771 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Germany - Karlsruhe Tel: 49-721-625370 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Italy - Venice Tel: 39-049-7625286 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Poland - Warsaw Tel: 48-22-3325737 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 Sweden - Stockholm Tel: 46-8-5090-4654 UK - Wokingham Tel: 44-118-921-5800 Fax: 44-118-921-5820 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-5778-366 Fax: 886-3-5770-955 Taiwan - Kaohsiung Tel: 886-7-213-7828 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 Taiwan - Taipei Tel: 886-2-2508-8600 Fax: 886-2-2508-0102 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 06/23/16 DS20005595A-page 16  2016 Microchip Technology Inc.