HV825LG-G

HV825 High-Voltage EL Lamp Driver IC Features • • • • • • • General Description ® Processed with HVCMOS Technology 1.0 to 1.6V Operating Supply Voltage DC to AC Conversion Output Load of Typically up to 6.0 nF Adjustable Output Lamp Frequency Adjustable Converter Frequency Enable Function The HV825 is a high-voltage driver designed for driving EL lamps typically up to 6.0 nF. The input supply voltage range is from 1.0V to 1.6V. The device uses a single inductor and a minimum number of passive components. The typical output voltage that can be applied to the EL lamp is ±56V. The HV825 can be enabled/disabled by connecting the RSW-Osc resistor to VDD/GND. The HV825 has two internal oscillators to drive a switching bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the RSW- Applications • • • • • Pagers Portable Transceivers Cellular Phones Remote Control Units Calculators Osc pin and the VDD supply pin. The EL lamp driver fre- quency is set by an external resistor connected between the REL-Osc pin and the VDD pin. An external inductor is connected between the LX and VDD pins. A 0.01 to 0.1 µF, 100V capacitor is connected between the CS pin and the GND pin. The EL lamp is connected between the VA pin and the VB pin. The switching BJT charges the external inductor and discharges it into the 0.01 to 0.1 µF, 100V capacitor at the CS pin. The voltage at the CS pin will start to increase. The outputs VA and VB are configured as an H-bridge, and are switching in opposite states to achieve a peak-to-peak voltage of two times the VCS voltage across the EL lamp. Typical Application Circuit ON = VDD OFF = 0V 0ȍ 1 VDD REL-Osc 2 RSW-Osc VA 7 3 CS VB 6 4 LX GND 5 8 Nȍ 560 μH 1N4148 VDD = VIN = 1.5V 0.1 μF 2 0.01 μF 100V  2015 Microchip Technology Inc. EL Lamp 1.0 nF 16V DS20005450A-page 1 HV825 Package Types VDD 1 8 REL-Osc RSW-Osc 2 7 VA CS 3 6 VB LX 4 5 GND 8-Lead SOIC / 8-Lead MSOP Block Diagram LX CS VDD RSW-Osc Switch Osc Q VA GND Q Output Osc Q VB REL-Osc Q Test Circuit ON = VDD OFF = GND Enable 0ȍ Nȍ 560 μH1 1N4148 VDD = VIN = 1.0V - 1.6V 0.1 μF 0.01 μF 100V 1: 1 VDD REL-Osc 2 RSW-Osc VA 7 3 CS VB 6 4 LX GND 5 8 Nȍ 4.7 nF Equivalent to 1.5 in2 lamp CSW 1.0 nF Murata part # LGH4N561K04 DS20005450A-page 2  2015 Microchip Technology Inc. HV825 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†) VDD pin............................................................................................................................................................ 0.5 to 2.5V Package Power Dissipation (MSOP-8) ................................................................................................................300 mW Package Power Dissipation (SO-8)......................................................................................................................400 mW Operating Ambient Temperature Range ................................................................................................... -25°C to +85°C Storage Temperature Range...................................................................................................................-65°C to +150°C † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for extended periods may affect device reliability DC CHARACTERISTICS Electrical Specifications: Unless otherwise specified, all specifications apply at TA = 25°C over recommended operating conditions. Parameters On-resistance of switching transistor VDD supply current (including inductor current) Sym. Min. Typ. Max. Unit RON — — 15 Ω IIN — 30 38 mA Conditions I = 50 mA VDD = 1.5V. See test circuit. Quiescent VDD supply current IDDQ — — 1.0 µA RSW-OSC = GND Output voltage on VCS VCS 52 56 62 V VDD = 1.5V. See test circuit. Differential output voltage across lamp VA-B 104 112 124 V VDD = 1.5V. See test circuit. VA-B output drive frequency fEL 400 — — Hz VDD = 1.5V. See test circuit. Switching transistor frequency fSW — 30 — KHz VDD = 1.5V. See test circuit. Switching transistor duty cycle D — 88 — % VDD 1.0 — 1.6 V Load capacitance CL 0 6 — nF Operating temperature TA -25 — +85 °C Low-level input voltage to RSW-OSC resistor VIL 0 — 0.2 V VDD = 1.0–1.6V High-level input voltage to RSW-OSC resistor VIH VDD–0.5 — VDD V VDD = 1.0–1.6V Recommended Operating Conditions Supply voltage Enable/Disable Table Typical Thermal Resistance Package Θja 8-Lead SOIC 101°C/W 8-Lead MSOP 216°C/W  2015 Microchip Technology Inc. DS20005450A-page 3 HV825 2.0 APPLICATION INFORMATION 2.1 Typical Performance TYPICAL PERFORMANCE Lamp Size VIN 1.5 in² 1.5V 30 mA Note: 2.2 IDD VCS fEL Brightness 56V 450 Hz 3.65 ft-lm Results use Murata part # LQH4N561K04, max DC resistance = 14.5Ω Diode A fast reverse recovery diode is used (1N4148 or equivalent). 2.3 CS Capacitor A 0.01 to 0.1 µF, 100V capacitor to GND is used to store the energy transferred from the inductor. 2.4 LX Inductor The inductor LX is used to boost the low input voltage. Table 2-1 shows the performance of the typical application circuit. TABLE 2-1: 2.6 REL-Osc Resistor The lamp frequency is controlled via the REL-Osc pin. The lamp frequency increases as REL-Osc decreases. As the lamp frequency increases, the amount of current drawn from the battery will increase and the output voltage VCS will decrease. This is because the lamp will draw more current from VCS when driven at higher frequencies. When the internal switch is on, the inductor is being charged. When the internal switch is off, the charge in the inductor will be transferred to the high voltage capacitor CS. The energy stored in the capacitor is connected to the internal H-bridge and therefore to the lamp. In general, smaller value inductors, which can handle more current, are more suitable to drive larger lamps. As the inductor value decreases, the switching frequency of the inductor (controlled by RSW-Osc) should be increased to avoid saturation. The test circuit uses a Murata (LQH4N561) 560 µH inductor. Using different inductor values or inductors from different manufacturers will affect the performance. As the inductor value decreases, smaller RSW-Osc values should be used. This will prevent inductor saturation. An inductor with the same inductance value (560 µH) but lower series resistance will charge faster. The RSW-Osc resistor value needs to be decreased to prevent inductor saturation and high current consumption. 2.7 CSW Capacitor A 1 nF capacitor is recommended from the RSW-Osc pin to GND. This capacitor is used to shunt any switching noise that may couple into the RSW-Osc pin. A CSW larger than 1 nF is not recommended. In general, as the lamp size increases, a larger REL-Osc is recommended to provide higher VCS. However, the color of the lamp is dependent upon its frequency and the shade of the color will change slightly with different frequencies. 2.5 RSW-Osc Resistor The switching frequency of the inductor is controlled via the RSW-Osc. The switching frequency increases as the RSW-Osc decreases. As the switching frequency increases, the amount of current drawn from the battery will decrease and the output voltage VCS will also decrease. DS20005450A-page 4  2015 Microchip Technology Inc. HV825 3.0 PACKAGING INFORMATION 3.1 Package Marking Information 8-Lead MSOP* Example: 8-Lead SOIC* XXXXX YWWNNN HV825 5011L7 XXXXXXX ^^YYWW NNN Legend: XX...X Y YY WW NNN e3 * Note: Example: HV825LG e3 1343 1L7 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo.  2015 Microchip Technology Inc. DS20005450A-page 5 HV825 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging DS20005450A-page 6  2015 Microchip Technology Inc. HV825 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.  2015 Microchip Technology Inc. DS20005450A-page 7 HV825 APPENDIX A: REVISION HISTORY Revision A (November 2015) • Initial release of this document in the Microchip format. This replaces version CO72913. DS20005450A-page 8  2015 Microchip Technology Inc. HV825 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. XX Device Package Options – X Environmental X – Media Type Device: HV825 = High Voltage EL Lamp Driver IC Package: LG MG = = 8-lead SOIC 8-lead MSOP Environmental: G = Lead (Pb)-free/ROHS-compliant Package Media Type: (blank) = 2500/Reel for LG and MG packages  2015 Microchip Technology Inc. Examples: a) HV825LG-G: High Voltage EL Lamp Driver IC 8-lead SOIC package, 2500/reel b) HV825MG-G: High Voltage EL Lamp Driver IC 8-lead MSOP package, 2500/reel DS20005450A-page 9 HV825 NOTES: DS20005450A-page 10  2015 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, MediaLB, MOST, MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. The Embedded Control Solutions Company and mTouch are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet, KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2015, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. ISBN: 978-1-5224-0001-1 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 ==  2015 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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