JANTX2N4261

2N4261 Silicon PNP Transistor D a ta S h e e t Description Applications Semicoa offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N4261J) • JANTX level (2N4261JX) • JANTXV level (2N4261JV) • JANS level (2N4261JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Features • • • • Hermetically sealed TO-72 metal can Also available in chip configuration Chip geometry 0014 Reference document: MIL-PRF-19500/511 Benefits • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 15 Collector-Base Voltage VCBO 15 Unit Volts Volts Emitter-Base Voltage VEBO 4.5 Volts Collector Current, Continuous IC 30 mA Power Dissipation, TA = 25°C Derate linearly above 25°C PT 200 1.14 Thermal Resistance RθJA 0.86 mW mW/°C °C/mW Operating Junction Temperature Storage Temperature TJ TSTG -65 to +200 °C Copyright© 2005 Rev. E SEMICOA 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N4261 Silicon PNP Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current V(BR)CEO Test Conditions Min IC = 10 mA VCB = 15 Volts 10 µA ICEX1 ICEX2 ICEX3 50 5 5 nA nA µA 5 nA 10 µA IEBX Emitter-Base Cutoff Current IEBO VEB = 4.5 Volts Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% On Characteristics Symbol hFE1 hFE2 hFE3 hFE4 Test Conditions IC = 1 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts IC = 30 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts TA = -55°C VCE = 1 Volts, IC = 1 mA VCE = 1 Volts, IC = 10 mA IC = 1 mA, IB = 0.1 mA IC = 10 mA, IB = 1 mA Min 25 30 20 15 Min rb’CC1 rb’CC2 Test Conditions f = 100 MHz VCE = 4 Volts, IC = 5 mA VCE = 10 Volts, IC = 10 mA VCB = 4 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 4 Volts, f = 31.8 MHz IC = 5 mA IC = 10 mA Saturated Turn-On Time tON Saturated Turn-Off Time tOFF DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Units Volts ICBO Emitter-Base Cutoff Current Parameter Max 15 VCE = 10Volts, VBE = 0.4Volts VCE = 10 Volts, VBE = 2 Volts VCE = 10 Volts, VBE = 2 Volts, TA = 150°C VBE = 2 Volts, VCE = 10 Volts Collector-Emitter Cutoff Current Typ VBE1 VBE2 VCEsat1 VCEsat2 Typ Max Units 150 0.8 1.0 0.15 0.35 Volts Max Units 2.5 pF 2.5 pF 60 50 ps VCC = 17 Volts, IC = 10 mA 2.5 ns VCC = 17 Volts, IC = 10 mA 3.5 ns Volts Dynamic Characteristics Parameter Symbol Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE1| |hFE2| Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Collector Base time constant Typ 15 20 Switching Characteristics Copyright© 2005 Rev. E SEMICOA 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2