2N6286 and 2N6287
Available on
commercial
versions
PNP Darlington Power Silicon Transistor
Qualified per MIL-PRF-19500/505
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This high speed PNP transistor is rated at 20 amps and is military qualified up to a JANTXV
level. This TO-204AA isolated package features a 180 degree lead orientation.
Important: For the latest information, visit our website http://www.microsemi.com.
TO-204AA (TO-3)
Package
FEATURES
•
JEDEC registered 2N6286 and 2N6287
•
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/505
•
RoHS compliant versions available (commercial grade only)
APPLICATIONS / BENEFITS
•
Military, space and other high reliability applications
•
•
High frequency response
TO-204AA case with isolated terminals
o
MAXIMUM RATINGS @ T C = +25 C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Collector Current
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation
2N6286
2N6287
2N6286
2N6287
o
@ T C = +25 C
o
@ T C = +100 C
(1)
Symbol
Value
T J and T STG
R ӨJC
IC
V CEO
-65 to +175
0.855
-20
-80
-100
-80
-100
-7
175
87.5
V CBO
V EBO
PT
Notes: 1. Derate linearly 1.0 W/oC above T C > +25 oC
T4-LDS-0309, Rev. 1 (8/7/13)
Unit
o
o
C
C/W
A
V
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
V
V
W
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
©2013 Microsemi Corporation
Page 1 of 7
2N6286 and 2N6287
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Industry standard TO-204AA (TO-3), hermetically sealed, 0.040 inch diameter pins
FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating. Solderable per MIL-STD-750
method 2026.
POLARITY: PNP (see schematic)
MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws
WEIGHT: Approximately 15 grams
See package dimensions on last page.
PART NOMENCLATURE
JAN
2N6286
(e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
JEDEC type number
(see Electrical Characteristics
table)
Symbol
IB
IC
IE
TC
V CB
V CBO
V CC
V CEO
V EB
V EBO
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Emitter current: The value of the dc current into the emitter terminal.
Case temperature: The temperature measured at a specified location on the case of a device.
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-supply voltage: The supply voltage applied to a circuit connected to the collector.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the
base terminal is open-circuited.
Emitter-base voltage: The dc voltage between the emitter and the base.
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the
collector terminal open-circuited.
T4-LDS-0309, Rev. 1 (8/7/13)
©2013 Microsemi Corporation
Page 2 of 7
2N6286 and 2N6287
o
ELECTRICAL CHARACTERISTICS @ T A = +25 C unless otherwise noted
Characteristics
Symbol
Min.
2N6286
2N6287
V (BR)CEO
-80
-100
Collector-Emitter Cutoff Current
V CE = -40 V
V CE = -50 V
2N6286
2N6287
I CEO
-1.0
-1.0
mA
Collector-Emitter Cutoff Current
V CE = -80 V, V BE = +1.5 V
V CE = -100 V, V BE = +1.5 V
2N6286
2N6287
I CEX
10
10
µA
I EBO
-2.5
mA
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I C = -100 mA
Emitter-Base Cutoff Current
V EB = -7.0 V
Max.
Unit
V
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I C = -1.0 A, V CE = -3.0 V
I C = -10 A, V CE = -3.0 V
I C = -20 A, V CE = -3.0 V
h FE
Collector-Emitter Saturation Voltage
I C = -20 A, I B = -200 mA
I C = -10 A, I B = -40 mA
Base-Emitter Saturation Voltage
I C = -20 A, I B = -200 mA
Base-Emitter Voltage Non-saturated
V CE = -3.0 V, I C = -10 A
18,000
V CE(sat)
-3.0
-2.0
V
V BE(sat)
-4.0
V
V BE
-2.8
V
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I C = -10 A, V CE = -3.0 V, f = 1 kHz
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I C = -10 A, V CE = -3.0 V, f = 1 MHz
Output Capacitance
V CB = -10 V, I E = 0, 100 kHz ≤ f ≤ 1 MHz
T4-LDS-0309, Rev. 1 (8/7/13)
1,500
1,250
300
©2013 Microsemi Corporation
h fe
300
|h fe |
8
C obo
80
400
pF
Page 3 of 7
2N6286 and 2N6287
o
ELECTRICAL CHARACTERISTICS @ T C = 25 C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Turn-On Time
V CC = -30 V, I C = -10 A; I B = -40 mA
Turn-Off Time
V CC = -30 V, I C = -10 A; I B1 = I B2 = -40 mA
t on
2.0
µs
t off
10
µs
SAFE OPERATING AREA (See figures 1 and 2 and MIL-STD-750,Test Method 3053)
DC Tests
T C = +25 °C, t = 1 second, 1 Cycle
Test 1
V CE = -8.75 V, I C = -20 A
Test 2
V CE = -30 V, I C = -5.8 A
Test 3
V CE = -80 V, I C = -100 mA (2N6286)
V CE = -100 V, I C = -100 mA (2N6287)
T4-LDS-0309, Rev. 1 (8/7/13)
©2013 Microsemi Corporation
Page 4 of 7
2N6286 and 2N6287
IC = Collector Current (Amperes)
SAFE OPERATING AREA
V CE – Collector to Emitter Voltage (Volts)
FIGURE 1
Maximum Safe Operating Area Graph
(continuous dc)
T4-LDS-0309, Rev. 1 (8/7/13)
©2013 Microsemi Corporation
Page 5 of 7
2N6286 and 2N6287
IC = Collector Current (Amperes)
SAFE OPERATING AREA (continued)
L – Inductance (Millihenries)
FIGURE 2
Safe Operating Area For Switching Between Saturation And Cutoff
(unclamped inductive load).
T4-LDS-0309, Rev. 1 (8/7/13)
©2013 Microsemi Corporation
Page 6 of 7
2N6286 and 2N6287
PACKAGE DIMENSIONS
Ltr
CD
CH
HR
HR1
HT
LD
LL
LL1
MHD
MHS
PS
PS1
S1
T1
T2
Case
Dimensions
Inches
Millimeters
Min
Max
Min
Max
0.875
22.23
0.250 0.360
6.35
9.14
0.495 0.525 12.57 13.34
0.131 0.188
3.33
4.78
0.060 0.135
1.52
3.43
0.038 0.043
0.97
1.09
0.312 0.500
7.92
12.70
0.050
1.27
0.151 0.165
3.84
4.19
1.177 1.197 29.90 30.40
0.420 0.440 10.67 11.18
0.205 0.225
5.21
5.72
0.655 0.675 16.64 17.15
Emitter
Base
Collector
Notes
3
4, 8
4
4, 8
6
3
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Dimensions are in inches. Millimeters are given for information only.
Body contour is optional within zone defined by CD
These dimensions shall be measured at points 0.050 inch (1.27 mm) to 0.055 inch (1.40 mm) below seating plane.
Both terminals
At both ends
Two holes
Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case.
LD applies between L1 and LL. Diameter is uncontrolled in L1.
In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
SCHEMATIC
T4-LDS-0309, Rev. 1 (8/7/13)
©2013 Microsemi Corporation
Page 7 of 7