MCP6411
1 MHz Operational Amplifier with EMI Filtering
Features:
Description:
• Low Quiescent Current: 47 μA (typical)
• Low Input Offset Voltage:
- ±1.0 mV (maximum)
• Enhanced EMI Protection:
- Electromagnetic Interference Rejection Ratio
(EMIRR) at 1.8 GHz: 90 dB
• Supply Voltage Range: 1.7V to 5.5V
• Gain Bandwidth Product: 1 MHz (typical)
• Rail-to-Rail Input/Output
• Slew Rate: 0.5 V/μs (typical)
• Unity Gain Stable
• No Phase Reversal
• Small Packages: SC70-5, SOT-23-5
• Extended Temperature Range:
- -40°C to +125°C
The Microchip Technology Inc. MCP6411 operational
amplifier operates with a single supply voltage as low
as 1.7V, while drawing low quiescent current (55 μA,
maximum). This op amp also has low-input offset
voltage (±1.0 mV, maximum) and rail-to-rail input and
output operation. In addition, the MCP6411 is unity gain
stable and has a gain bandwidth product of 1 MHz
(typical). This combination of features supports
battery-powered and portable applications. The
MCP6411 has enhanced EMI protection to minimize
any electromagnetic interference from external
sources. This feature makes it well suited for EMI
sensitive applications such as power lines, radio
stations and mobile communications.
Applications:
•
•
•
•
•
•
Portable Medical Instruments
Safety Monitoring
Battery-Powered Systems
Remote Sensing
Supply Current Sensing
Analog Active Filters
The MCP6411 is offered in small SC70-5 and
SOT-23-5 packages. All devices are designed using an
advanced CMOS process and fully specified in
extended temperature range from –40°C to +125°C.
Typical Application
VDD
R+¨R
R-¨R
VDD
-
Vb
VDD
Design Aids:
•
•
•
•
•
SPICE Macro Models
FilterLab® Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
R1
1k
+
Va
-
+
R-¨R R+¨R
R3
MCP641 100k
VDD
-
+
R2
1k
VOUT
MCP641
R5
100k
MCP641
100k
V OUT = V a – V b ---------------1k
Strain Gauge
Package Types
MCP6411
SC70-5, SOT-23-5
VOUT 1
5 VDD
VSS 2
VIN+ 3
2017 Microchip Technology Inc.
4 VIN–
DS20005791B-page 1
MCP6411
NOTES:
DS20005791B-page 2
2017 Microchip Technology Inc.
MCP6411
1.0
ELECTRICAL CHARACTERISTICS
1.1
Absolute Maximum Ratings †
VDD – VSS ..................................................................................................................................................................6.5V
Current at Analog Input Pins (VIN+, VIN-) ................................................................................................................±2 mA
Analog Inputs (VIN+, VIN-)†† .................................................................................................... VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ................................................................................................... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ................................................................................................................................ |VDD – VSS|
Output Short-Circuit Current ..........................................................................................................................Continuous
Current at Input Pins ...............................................................................................................................................±2 mA
Current at Output and Supply Pins ......................................................................................................................±30 mA
Storage Temperature .............................................................................................................................–65°C to +150°C
Maximum Junction Temperature (TJ) ....................................................................................................................+150°C
ESD Protection on All Pins (HBM; MM) 4 kV; 400V
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† See Section 4.1.2 “Input Voltage Limits”.
1.2
Specifications
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA= +25°C, VDD = +1.72V to +5.5V, VSS= GND,
VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 25 k to VL and CL = 30 pF (refer to Figure 1-1).
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input Offset Voltage
VOS
–1.0
—
1.0
mV
VDD = 3.5V; VCM = VDD/4
Input Offset Drift with
Temperature
VOS/TA
—
±3.0
—
μV/°C
PSRR
75
90
—
dB
IB
—
±1
—
pA
—
20
—
pA
TA = +85°C
TA = +125°C
Input Offset
Power Supply Rejection Ratio
TA= –40°C to +125°C,
VCM = VSS
VCM = VDD/4
Input Bias Current and Impedance
Input Bias Current
—
800
—
pA
Input Offset Current
IOS
—
±1
—
pA
Common Mode Input Impedance
ZCM
—
1013||12
—
||pF
Differential Input Impedance
ZDIFF
—
1013||12
—
|pF
Common Mode Input Voltage
Range
VCMR
VSS – 0.3
—
VDD + 0.3
V
Common Mode Rejection Ratio
CMRR
75
90
—
dB
VDD = 5.5V
VCM = –0.3V to 5.8V
65
85
—
dB
VDD = 1.72V
VCM = –0.3V to 2.02V
Common Mode
2017 Microchip Technology Inc.
DS20005791B-page 3
MCP6411
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA= +25°C, VDD = +1.72V to +5.5V, VSS= GND,
VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 25 k to VL and CL = 30 pF (refer to Figure 1-1).
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
AOL
95
115
—
dB
0.2 < VOUT < (VDD –0.2V)
VCM= VDD/4
VDD = 5.5V
VOH
VDD – 5.5
VDD – 2
—
mV
VDD = 1.72V
VDD – 7
VDD – 3
—
mV
VDD = 5.5V
VSS + 2
VSS + 5.5
mV
VDD = 1.72V
VSS + 2.5 VSS + 6.5
mV
VDD = 5.5V
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
Output
High-Level Output Voltage
Low-Level Output Voltage
VOL
—
—
Output Short-Circuit Current
—
±6
—
mA
VDD = 1.72V
—
±22
—
mA
VDD = 5.5V
VDD
1.72
—
5.5
V
IQ
35
47
55
μA
ISC
Power Supply
Supply Voltage
Quiescent Current
TABLE 1-2:
IO = 0, VCM = VDD/4
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA= +25°C, VDD = +1.72V to +5.5V, VSS= GND,
VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 25 k to VL and CL = 30 pF (refer to Figure 1-1).
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
1
—
MHz
Phase Margin
PM
—
68
—
°
Slew Rate
SR
—
0.5
—
V/μs
Input Noise Voltage
Eni
—
10
—
μVP-P
Input Noise Voltage Density
eni
—
38
—
nV/Hz
—
32
—
nV/Hz
f = 10 kHz
Input Noise Current Density
ini
—
0.6
—
fA/Hz
f = 1 kHz
Electromagnetic Interference
Rejection Ratio
EMIRR
—
79
—
dB
—
85
—
VIN = 100 mVPK,
900 MHz
—
90
—
VIN = 100 mVPK,
1800 MHz
—
94
—
VIN = 100 mVPK,
2400 MHz
G = +1 V/V
Noise
DS20005791B-page 4
f = 0.1 Hz to 10 Hz
f = 1 kHz
VIN = 100 mVPK,
400 MHz
2017 Microchip Technology Inc.
MCP6411
TABLE 1-3:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.72V to +5.5V and VSS = GND.
Parameters
Sym.
Min.
Typ.
Max.
Units
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 5L-SC70
JA
—
331
—
°C/W
Thermal Resistance, 5L-SOT-23
JA
—
221
—
°C/W
Conditions
Temperature Ranges
Note 1
Thermal Package Resistances
Note 1:
1.3
The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C.
Test Circuits
The circuit used for most DC and AC tests is shown in
Figure 1-1. This circuit can independently set VCM and
VOUT (see Equation 1-1). Note that VCM is not the
circuit’s Common mode voltage ((VP + VM)/2), and that
VOST includes VOS plus the effects (on the input offset
error, VOST) of the temperature, CMRR, PSRR and
AOL.
EQUATION 1-1:
CF
6.8 pF
RG
100 k
VP
VDD
VIN+
CB1
100 nF
MCP6411
G DM = R F R G
VDD/2
CB2
1 μF
VIN–
V CM = V P + V DD 2 2
VM
V OST = V IN – – V IN +
V OUT = V DD 2 + V P – V M + V OST 1 + G DM
Where:
GDM = Differential Mode Gain
(V/V)
VCM = Op Amp’s Common Mode
Input Voltage
(V)
VOST = Op Amp’s Total Input Offset Voltage (mV)
2017 Microchip Technology Inc.
RF
100 k
RG
100 k
RL
25 k
RF
100 k
CF
6.8 pF
VOUT
CL
30 pF
VL
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
DS20005791B-page 5
MCP6411
NOTES:
DS20005791B-page 6
2017 Microchip Technology Inc.
MCP6411
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Note: Unless otherwise indicated, TA= +25°C, VDD = +1.72V to +5.5V, VSS= GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 25 k to VL and CL = 30 pF.
20
Input Offset Voltage (μV)
25
1455 Samples
VDD = 3.5V
VCM = VDD/4
15
10
5
0
-1000
-900
-800
-700
-600
-500
-400
-300
-200
-100
0
100
200
300
400
500
600
700
800
900
1000
Percentage of Occurances (%)
30
1000
800
600
400
TA = -40°C
TA = +25°C
200
0
-200
-400
TA = +85°C
-600
TA = +125°C
VDD = 5.5V
-800
Representative Part
-1000
-0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Common Mode Input Voltage (V)
Input Offset Voltage (μV)
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-4:
Input Offset Voltage vs.
Common Mode Input Voltage.
1000 Samples
TA = -40°C to +125°C
16%
Input Offset Voltage (μV)
14%
12%
10%
8%
6%
4%
2%
0%
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
VDD = 5.5V
VDD = 1.72V
Representative
Part
0
-15
-13
-11
-9
-7
-5
-3
-1
1
3
5
7
9
11
13
15
Percentage of Occurrences
18%
0.5
1
Input Offset Voltage Drift.
FIGURE 2-5:
Output Voltage.
400
TA = -40°C
TA = +25°C
0
-200
TA = +85°C
-400
TA = +125°C
VDD = 1.72V
Representative Part
-600
-0.3
0
0.3
0.6
0.9
1.2
1.5
1.8
Common Mode Input Voltage (V)
FIGURE 2-3:
Input Offset Voltage vs.
Common Mode Input Voltage.
2017 Microchip Technology Inc.
2.1
Input Offset Voltage (μV)
Input Offset Voltage (μV)
600
200
2
2.5
3
3.5
4
4.5
5
5.5
Output Voltage (V)
Input Offset Voltage Drift (μV/°C)
FIGURE 2-2:
1.5
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
Input Offset Voltage vs.
Representative Part
TA = +85°C
TA = -40°C
TA = +125°C
TA = +25°C
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Power Supply Voltage (V)
FIGURE 2-6:
Input Offset Voltage vs.
Power Supply Voltage.
DS20005791B-page 7
MCP6411
Note: Unless otherwise indicated, TA= +25°C, VDD = +1.72V to +5.5V, VSS= GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 25 k to VL and CL = 30 pF.
140
Input Noise Voltage Density
(nV/¥Hz)
60
130
CMRR, PSRR (dB)
50
VDD = 1.72V
40
30
20
VDD = 5.5V
10
PSSR
120
110
100
90
80
CMRR @ VDD = 5.5V
@ VDD = 1.72V
70
60
50
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
5.5
-25
0
Common Mode Input Voltage (V)
FIGURE 2-7:
Input Noise Voltage Density
vs. Common Mode Input Voltage.
FIGURE 2-10:
Temperature.
50
75
100
125
CMRR, PSRR vs. Ambient
1,000.00p
Input Bias and Offset Currents
(A)
Input Noise Voltage Density
(V/¥Hz)
10000
10μ
1μ
1000
100
100n
10
10n
VDD = 5.5V
100.00p
FIGURE 2-8:
vs. Frequency.
Input Noise Voltage Density
1.00p
20
PSRR+
0
10
100
1,000
10,000
Frequency (Hz)
FIGURE 2-9:
Frequency.
DS20005791B-page 8
CMRR, PSRR vs.
100,000
Input Bias Current (pA)
PSRR-
40
.01p
35
45
55
65
75
85
95 105 115 125
FIGURE 2-11:
Input Bias, Offset Current
vs. Ambient Temperature.
100
60
Input Offset Current
Ambient Temperature (°C)
Representative Part
CMRR
.10p
25
120
80
Input Bias Current
10.00p
1
1n
0.1 1.E+0
1 1.E+1
10 1.E+2
100 1.E+3
1k 1.E+4
10k 1.E+5
100k 1.E+6
1M
1.E-1
Frequency (Hz)
CMRR, PSRR (dB)
25
Ambient Temperature (°C)
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
Representative Part
TA = +25°C
0
0.5
1
TA = +125°C
TA = +85°C
1.5
3
2
2.5
3.5
4
4.5
5
5.5
Common Mode Input Voltage (V)
FIGURE 2-12:
Input Bias Current vs.
Common Mode Input Voltage.
2017 Microchip Technology Inc.
MCP6411
Note: Unless otherwise indicated, TA= +25°C, VDD = +1.72V to +5.5V, VSS= GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 25 k to VL and CL = 30 pF.
60
55
50
45
40
35
30
25
20
15
10
5
0
VDD = 1.72V
50
45
40
VDD = 5.5V
35
30
-50
-25
0
25
50
75
100
125
VDD = 5.5V
G = +1 V/V
-0.5 0
Ambient Temperature (°C)
1.5
2
2.5
3
3.5
4
4.5
120
Open-Loop Gain (dB)
40
TA = +125°C
TA = +85°C
20
TA = +25°C
TA = -40°C
10
0
80
-45
Phase
60
-90
40
-135
20
-180
Gain
0
-225
-20
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
FIGURE 2-14:
Quiescent Current vs.
Power Supply Voltage.
-270
-40
-315
0.1
1
10 100 1k 10k 100k 1M 10M
1.E-11.E+01.E+11.E+21.E+31.E+41.E+51.E+61.E+7
Frequency (Hz)
Power Supply Voltage (V)
FIGURE 2-17:
Frequency.
Open-Loop Gain, Phase vs.
140
DC Open-Loop Gain (dB)
60
55
50
45
40
35
30
25
20
VDD = 1.72V
15
G = +1 V/V
10
5
0
-0.5
5.5
45
VDD = 5.5V
VDD = 1.72V
100
50
30
5
FIGURE 2-16:
Quiescent Current vs.
Common Mode Input Voltage.
60
Quiescent Current (μA)
1
Common Mode Input Voltage (V)
FIGURE 2-13:
Quiescent Current vs.
Ambient Temperature.
Quiescent Current (μA)
0.5
Open-Loop Phase (°)
55
Quiescent Current (μA)
Quiescent Current (μA)
60
VDD = 5.5V
130
120
110
VDD = 1.72V
100
90
80
0.5
1.5
Common Mode Input Voltage (V)
FIGURE 2-15:
Quiescent Current vs.
Common Mode Input Voltage.
2017 Microchip Technology Inc.
2.5
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
FIGURE 2-18:
DC Open-Loop Gain vs.
Ambient Temperature.
DS20005791B-page 9
MCP6411
180
1.2
160
140
1.0
Gain Bandwidth Product
120
0.8
100
0.6
80
60
0.4
Phase Margin
40
0.2
10
20
VDD = 5.5V
0.0
Output Voltage Swing (VP-P)
1.4
Phase Margin (°C)
Gain Bandwidth Product
(MHz)
Note: Unless otherwise indicated, TA= +25°C, VDD = +1.72V to +5.5V, VSS= GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 25 k to VL and CL = 30 pF.
0
-50
-25
0
25
50
75
100
VDD = 5.5V
VDD = 1.72V
1
0.1
125
1000
10000
1k
10k
Ambient Temperature (°C)
180
1.2
160
140
1.0
120
0.8
Gain Bandwidth Product
100
80
0.6
60
0.4
40
Phase Margin
0.2
20
VDD = 1.72V
0.0
-50
-25
Phase Margin (°C)
Gain Bandwidth Product
(MHz)
1.4
25
50
75
100
125
FIGURE 2-20:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature.
Output Short Circuit Current
(mA)
10000000
10M
Output Voltage Swing vs.
VDD = 1.72V
100
10
VDD - VOH
VOL - VSS
1
0.1
0.01
0.1
1
10
100
Output Current (mA)
Ambient Temperature (°C)
50
40
30
20
10
0
-10
-20
-30
-40
-50
1000000
1000
0.01
0.001
0
0
Output Voltage Headroom
(mV)
FIGURE 2-22:
Frequency.
FIGURE 2-19:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature.
100000
100k
1M
Frequency (Hz)
FIGURE 2-23:
Output Voltage Headroom
vs. Output Current.
ISC+ @ TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
ISC- @ TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Power Supply Voltage (V)
FIGURE 2-21:
Output Short Circuit Current
vs. Power Supply Voltage.
DS20005791B-page 10
2017 Microchip Technology Inc.
MCP6411
Note: Unless otherwise indicated, TA= +25°C, VDD = +1.72V to +5.5V, VSS= GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 25 k to VL and CL = 30 pF.
1.0
VDD = 5.5V
100
Slew Rate (V/μs)
Output Voltage Headroom
(mV)
1000
VDD - VOH
10
VOL - VSS
1
0.9
Falling Edge, VDD = 1.72V
0.8
Falling Edge, VDD = 5.5V
0.7
0.6
0.5
0.4
Rising Edge, VDD = 1.72V
0.3
0.1
0.001
Rising Edge, VDD = 5.5V
0.2
0.01
0.1
1
10
100
-50
-25
Output Current (mA)
0
25
50
75
100
125
Ambient Temperature (ஈC)
FIGURE 2-24:
Output Voltage Headroom
vs. Output Current.
FIGURE 2-27:
Temperature.
Slew Rate vs. Ambient
Output Voltage (20 mV/div)
Output Voltage Headroom
(mV)
3.0
2.5
VDD - VOH
2.0
1.5
1.0
VOL - VSS
0.5
0.0
VDD = 1.72V
-50
-25
0
25
50
75
100
Time (10 μs/div)
VDD - VOH
VOL - VSS
VDD = 5.5V
-25
0
25
50
75
FIGURE 2-28:
Pulse Response.
Output Voltage (20 mV/div)
Output Voltage Headroom
(mV)
FIGURE 2-25:
Output Voltage Headroom
vs. Ambient Temperature.
-50
100
Small Signal Noninverting
VDD = 5.5V
G = -1 V/V
125
Ambient Temperature (°C)
FIGURE 2-26:
Output Voltage Headroom
vs. Ambient Temperature.
2017 Microchip Technology Inc.
G = +1 V/V
125
Ambient Temperature (°C)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VDD = 5.5V
Time (10 μs/div)
FIGURE 2-29:
Response.
Small Signal Inverting Pulse
DS20005791B-page 11
MCP6411
Note: Unless otherwise indicated, TA= +25°C, VDD = +1.72V to +5.5V, VSS= GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 25 k to VL and CL = 30 pF.
10000
VDD = 2.2V
5
Closed Loop Output
Impedance (:)
Output Voltage (V)
6
4
3
2
VDD = 5.5V
G = +1 V/V
1000
100
GN:
101 V/V
11 V/V
1 V/V
10
1
1
1.0E+02
1.0E+03
1k
0
FIGURE 2-30:
Pulse Response.
1.0E+04
10k
Time (0.1 ms/div)
1.0E+05
100k
1M
1.0E+06
10M
Frequency (Hz)
Large Signal Noninverting
FIGURE 2-33:
Closed Loop Output
Impedance vs. Frequency.
0.1
6
100m
0.01
10m
0.001
1m
-IIN (A)
Output Voltage (V)
5
4
3
0.0001
100μ
0.00001
10μ
1μ
0.000001
2
0.0000001
100n
VDD = 5.5V
G = +1 V/V
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
1E-08
10n
1n
1E-09
1
-1
0
-0.8
-0.6
Time (0.1 ms/div)
FIGURE 2-31:
Response.
Large Signal Inverting Pulse
4
EMIRR (dB)
Input, Output Voltages (V)
5
3
2
VOUT
VDD = 5.5V
G = +2 V/V
0
-1
VIN
120
110
100
90
80
70
60
50
40
30
20
10
0
0
VIN = 316 mVPK
VDD = 5.5V
10
Time (0.1 ms/div)
FIGURE 2-32:
The MCP6411 Device
Shows No Phase Reversal.
DS20005791B-page 12
-0.2
FIGURE 2-34:
Measured Input Current vs.
Input Voltage (below VSS).
6
1
-0.4
VIN (V)
100
1000
10000
Frequency (MHz)
FIGURE 2-35:
EMIRR vs. Frequency.
2017 Microchip Technology Inc.
MCP6411
EMIRR (dB)
Note: Unless otherwise indicated, TA= +25°C, VDD = +1.72V to +5.5V, VSS= GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 25 k to VL and CL = 30 pF.
120
110
100
90
80
70
60
50
40
30
20
10
0
0.01
EMIRR @ 2400 MHZ
EMIRR @ 1800 MHZ
EMIRR @ 900 MHZ
EMIRR @ 400 MHZ
0.1
1
RF Input Peak Voltage (VPK)
FIGURE 2-36:
EMIRR vs. RF Input
Peak-to-Peak Voltage.
2017 Microchip Technology Inc.
DS20005791B-page 13
MCP6411
NOTES:
DS20005791B-page 14
2017 Microchip Technology Inc.
MCP6411
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP6411
3.1
SC70-5,
SOT-23-5
Symbol
1
VOUT
Description
Analog Output
2
VSS
Negative Power Supply
3
VIN+
Noninverting Input
4
VIN–
Inverting Input
5
VDD
Positive Power Supply
Analog Outputs
The output pin is a low-impedance voltage source.
3.2
Analog Inputs
The noninverting and inverting inputs are
high-impedance CMOS inputs with low bias currents.
3.3
Power Supply Pins (VSS, VDD)
The positive power supply (VDD) is 1.72V to 5.5V
higher than the negative power supply (VSS). For
normal operation, the other pins are at voltages
between VSS and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need bypass capacitors.
2017 Microchip Technology Inc.
DS20005791B-page 15
MCP6411
NOTES:
DS20005791B-page 16
2017 Microchip Technology Inc.
MCP6411
4.0
APPLICATION INFORMATION
The MCP6411 op amp is manufactured using
Microchip’s state-of-the-art CMOS process. This op
amp is unity gain stable and suitable for a wide range
of general-purpose applications.
4.1
In some applications, it may be necessary to prevent
excessive voltages from reaching the op amp inputs;
Figure 4-2 shows one approach to protecting these
inputs.
VDD
Rail-to-Rail Input
4.1.1
D1
PHASE REVERSAL
The MCP6411 op amp is designed to prevent phase
reversal, when the input pins exceed the supply
voltages. Figure 2-32 shows the input voltage
exceeding the supply voltage with no phase reversal.
4.1.2
INPUT VOLTAGE LIMITS
In order to prevent damage and/or improper operation
of the amplifier, the circuit must limit the voltages at the
input pins (see Section 1.1, Absolute Maximum
Ratings †).
The Electrostatic Discharge (ESD) protection on the
inputs can be depicted as shown in Figure 4-1. This
structure was chosen to protect the input transistors
against many, but not all, overvoltage conditions, and
to minimize the input bias current (IB).
VDD Bond
Pad
VIN+ Bond
Pad
Input
Stage
Bond V –
IN
Pad
VSS Bond
Pad
FIGURE 4-1:
Structures.
D2
V1
VOUT
MCP6411
V2
FIGURE 4-2:
Inputs.
Protecting the Analog
A significant amount of current can flow out of the
inputs when the Common mode voltage (VCM) is below
ground (VSS); see Figure 2-34.
4.1.3
INPUT CURRENT LIMITS
In order to prevent damage and/or improper operation
of the amplifier, the circuit must limit the currents into
the input pins (see Section 1.1, Absolute Maximum
Ratings †).
Figure 4-3 shows one approach to protecting these
inputs. The resistors R1 and R2 limit the possible
currents in or out of the input pins (and the ESD diodes,
D1 and D2). The diode currents will go through either
VDD or VSS.
VDD
D1
D2
V1
The input ESD diodes clamp the inputs when they try
to go more than one diode drop below VSS. They also
clamp any voltages that go well above VDD; their
breakdown voltage is high enough to allow normal
operation, but not low enough to protect against slow
overvoltage (beyond VDD) events. Very fast ESD
events that meet the spec are limited so that damage
does not occur.
2017 Microchip Technology Inc.
VOUT
R1
Simplified Analog Input ESD
MCP6411
V2
R2
min(R1,R2) >
VSS – min(V1, V2)
2 mA
min(R1,R2) >
max(V1,V2) – VDD
2 mA
FIGURE 4-3:
Inputs.
Protecting the Analog
DS20005791B-page 17
MCP6411
NORMAL OPERATION
The input stage of the MCP6411 op amp uses two
differential input stages in parallel. One operates at a
low common mode input voltage (VCM), while the other
operates at a high VCM. With this topology, the device
operates with a VCM up to 300 mV above VDD and
300 mV below VSS. The input offset voltage is
measured at VCM = VSS – 0.3V and VDD + 0.3V to
ensure proper operation.
100000
Reco
ommended R ISO (Ω)
4.1.4
The transition between the input stages occurs when
VCM is near VDD – 0.6V (see Figures 2-3 and 2-4). For
the best distortion performance and gain linearity, with
noninverting gains, avoid this region of operation.
4.2
VDD = 5.5 V
RL = 100 kȍ
10000
1000
100
GN:
1 V/V
2 V/V
≥ 5 V/V
10
1
10p
100p
1n
10n
0.1μ
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
Normalized Load Capacitance; CL/GN (F)
FIGURE 4-5:
Recommended RISO Values
for Capacitive Loads.
Rail-to-Rail Output
The output voltage range of the MCP6411 op amp is
0.0025V (typical) and 5.497V (typical) when
RL = 25 k is connected to VDD/2 and VDD = 5.5V.
Refer to Figures 2-24 and 2-26 for more information.
After selecting RISO for your circuit, double-check the
resulting frequency response peaking and step
response overshoot. Modify RISO’s value until the
response is reasonable.
4.3
4.4
Capacitive Loads
Supply Bypass
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases, and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. While a unity-gain buffer (G = +1 V/V) is the
most sensitive to the capacitive loads, all gains show
the same general behavior.
The MCP6411 op amp’s power supply pin (VDD for
single-supply) should have a local bypass capacitor
(i.e., 0.01 μF to 0.1 μF) within 2 mm for good high
frequency performance. It can use a bulk capacitor
(i.e., 1 μF or larger) within 100 mm to provide large,
slow currents. This bulk capacitor can be shared with
other analog parts.
When driving large capacitive loads with the MCP6411
op amp (e.g., > 60 pF when G = +1 V/V), a small series
resistor at the output (RISO in Figure 4-5) improves the
feedback loop’s phase margin (stability) by making the
output load resistive at higher frequencies. The
bandwidth will be generally lower than the bandwidth
with no capacitance load.
In applications where low input bias current is critical,
Printed Circuit Board (PCB) surface leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low humidity conditions, a typical resistance
between nearby traces is 1012. A 5V difference would
cause 5 pA of current to flow, which is greater than the
MCP6411’s bias current at +25°C (±1 pA, typical).
–
VIN
MCP6411
+
R ISO
VOUT
CL
4.5
PCB Surface Leakage
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 4-6.
Guard Ring
VIN– VIN+
VSS
FIGURE 4-4:
Output Resistor, RISO
Stabilizes Large Capacitive Loads.
Figure 4-5 gives the recommended RISO values for the
different capacitive loads and gains. The x-axis is the
normalized load capacitance (CL/GN), where GN is the
circuit's noise gain. For noninverting gains, GN and the
Signal Gain are equal. For inverting gains, GN is
1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).
DS20005791B-page 18
FIGURE 4-6:
for Inverting Gain.
Example Guard Ring Layout
2017 Microchip Technology Inc.
MCP6411
1.
2.
Noninverting Gain and Unity-Gain Buffer:
a) Connect the noninverting pin (VIN+) to the
input with a wire that does not touch the
PCB surface.
b) Connect the guard ring to the inverting input
pin (VIN–). This biases the guard ring to the
Common mode input voltage.
Inverting Gain and Transimpedance Gain
Amplifiers (convert current to voltage, such as
photo detectors):
a) Connect the guard ring to the noninverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the op
amp (e.g., VDD/2 or ground).
b) Connect the inverting pin (VIN–) to the input
with a wire that does not touch the PCB
surface.
4.6
Electromagnetic Interference
Rejection Ratio (EMIRR)
Definitions
The electromagnetic interference (EMI) is the
disturbance that affects an electrical circuit due to
either electromagnetic induction or electromagnetic
radiation emitted from an external source.
The parameter which describes the EMI robustness of
an op amp is the Electromagnetic Interference
Rejection Ratio (EMIRR). It quantitatively describes the
effect that an RF interfering signal has on op amp
performance. Internal passive filters make EMIRR
better compared with older parts. This means that, with
good PCB layout techniques, your EMC performance
should be better.
EMIRR is defined as:
EQUATION 4-1:
V RF
EMIRR dB = 20 log ------------- V
OS
Where:
VRF = Peak Amplitude of
RF Interfering Signal (VPK)
VOS = Input Offset Voltage Shift (V)
4.7
4.7.1
Application Circuits
CARBON MONOXIDE GAS SENSOR
A carbon monoxide (CO) gas detector is a device that
detects the presence of carbon monoxide gas. Usually
this is battery-powered and transmits audible and
visible warnings.
The sensor responds to CO gas by reducing its
resistance proportionaly to the amount of CO present in
the air exposed to the internal element. On the sensor
module, this variable is part of a voltage divider formed
by the internal element and potentiometer R1. The
output of this voltage divider is fed into the noninverting
inputs of the MCP6411 op amp. The device is
configured as a buffer with unity gain and is used to
provide a nonloaded test point for sensor sensitivity.
Because this sensor can be corrupted by parasitic electromagnetic signals, the MCP6411 op amp can be used
for conditioning this sensor.
2017 Microchip Technology Inc.
DS20005791B-page 19
MCP6411
In Figure 4-7, the variable resistor is used to calibrate
the sensor in different environments.
.
VDD
VREF
VDD
-
+
R1
FIGURE 4-7:
4.7.2
VOUT
MCP641
CO Gas Sensor Circuit.
PRESSURE SENSOR AMPLIFIER
The MCP6411 is well-suited for conditioning sensor
signals in battery-powered applications. Many sensors
are configured as Wheatstone bridges. Strain gauges
and pressure sensors are two common examples.
Figure 4-8 shows a strain gauge amplifier, using the
MCP6411 Enhanced EMI protection device. The
difference amplifier with EMI robustness op amp is
used to amplify the signal from the Wheatstone bridge.
The two op amps, configured as buffers and connected
at outputs of pressure sensors, prevents resistive
loading of the bridge by resistor R1 and R2. Resistors
R1,R2 and R3,R5 need to be chosen with very low
tolerance to match the CMRR.
4.7.3
BATTERY CURRENT SENSING
The MCP6411 op amp’s Common Mode Input Range,
which goes 0.3V beyond both supply rails, supports its
use in high-side and low-side battery current sensing
applications. The low quiescent current helps prolong
battery life, and the rail-to-rail output supports detection
of low currents.
Figure 4-9 shows a high-side battery current sensor
circuit. The 10 resistor is sized to minimize power
losses. The battery current (IDD) through the 10
resistor causes its top terminal to be more negative
than the bottom terminal. This keeps the Common
mode input voltage of the op amp below VDD, which is
within its allowed range. The output of the op amp will
also be below VDD, within its Maximum Output Voltage
Swing specification.
VDD
10
VDD
VOUT
IDD
1.8V
to
5.5V
MCP6411
100 k
VSS
1 M
V DD – V OUT
I DD = ---------------------------------------- 10 V/V 10
High-Side Battery Current Sensor
VDD
R+∆R R-∆R
Va
VDD
- MCP641
+
R1
100:
Vb
VDD
R-∆R R+∆R
-
+
R2
100:
MCP641
R3
10 k:
FIGURE 4-9:
Battery Current Sensing.
VDD
VOUT
-
+
MCP6
R5
10 k:
100k
V OUT = V a – V b ---------------1k
Strain Gauge
FIGURE 4-8:
DS20005791B-page 20
Pressure Sensor Amplifier.
2017 Microchip Technology Inc.
MCP6411
5.0
DESIGN AIDS
Microchip provides the basic design tools needed for
the MCP6411 op amp.
5.1
FilterLab® Software
Microchip’s FilterLab software is an innovative software
tool that simplifies analog active filter design using op
amps. Available at no cost from the Microchip web site
at www.microchip.com/filterlab, the FilterLab design
tool provides full schematic diagrams of the filter circuit
with component values. It also outputs the filter circuit
in SPICE format, which can be used with the macro
model to simulate the actual filter performance.
5.2
Microchip Advanced Part Selector
(MAPS)
MAPS is a software tool that helps semiconductor
professionals efficiently identify the Microchip
devices that fit a particular design requirement.
Available at no cost from the Microchip website at
www.microchip.com/ maps, MAPS is an overall
selection tool for Microchip’s product portfolio that
includes Analog, Memory, MCUs and DSCs. Using this
tool, you can define a filter to sort features for a
parametric search of devices and export side-by-side
technical comparison reports. Helpful links are also
provided for data sheets, purchase and sampling of
Microchip parts.
5.3
5.4
Application Notes
The following Microchip Analog Design Note and
Application Notes are available on the Microchip web
site at www.microchip.com/appnotes, and are
recommended as supplemental reference resources.
• ADN003 – “Select the Right Operational Amplifier
for your Filtering Circuits”, DS21821
• AN722 – “Operational Amplifier Topologies and
DC Specifications”, DS00722
• AN723 – “Operational Amplifier AC Specifications
and Applications”, DS00723
• AN884 – “Driving Capacitive Loads With Op
Amps”, DS00884
• AN990 – “Analog Sensor Conditioning
Circuits – An Overview”, DS00990
• AN1177 – “Op Amp Precision Design: DC Errors”,
DS01177
• AN1228 – “Op Amp Precision Design: Random
Noise”, DS01228
• AN1297 – “Microchip’s Op Amp SPICE Macro
Models”, DS01297
• AN1332: “Current Sensing Circuit Concepts and
Fundamentals”’ DS01332
• AN1494: “Using MCP6491 Op Amps for Photodetection Applications”’ DS01494
These application notes and others are listed in the
design guide:
• “Signal Chain Design Guide”, DS21825
Analog Demonstration and
Evaluation Boards
Microchip offers a broad spectrum of Analog
Demonstration and Evaluation Boards that are
designed to help you achieve faster time to market.
For a complete listing of these boards and their
corresponding user’s guides and technical
information, visit the Microchip web site at
www.microchipdirect.com.
Some boards that are especially useful are:
•
•
•
•
•
•
MCP6XXX Amplifier Evaluation Board 1
MCP6XXX Amplifier Evaluation Board 2
MCP6XXX Amplifier Evaluation Board 3
MCP6XXX Amplifier Evaluation Board 4
Active Filter Demo Board Kit
5/6-Pin SOT-23 Evaluation Board, P/N VSUPEV2
2017 Microchip Technology Inc.
DS20005791B-page 21
MCP6411
NOTES:
DS20005791B-page 22
2017 Microchip Technology Inc.
MCP6411
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
5-Lead SC70
Example:
41125
5-Lead SOT-23
Example:
64117
22256
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it
will be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2017 Microchip Technology Inc.
DS20005791B-page 23
MCP6411
DS20005791B-page 24
2017 Microchip Technology Inc.
MCP6411
2017 Microchip Technology Inc.
DS20005791B-page 25
MCP6411
5-Lead Plastic Small Outline Transistor (OT) [SOT23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
0.20 C 2X
D
e1
A
D
N
E/2
E1/2
E1
E
(DATUM D)
(DATUM A-B)
0.15 C D
2X
NOTE 1
1
2
e
B
NX b
0.20
C A-B D
TOP VIEW
A
A A2
0.20 C
SEATING PLANE
A
SEE SHEET 2
C
A1
SIDE VIEW
Microchip Technology Drawing C04-028D [OT] Sheet 1 of
DS20005791B-page 26
2017 Microchip Technology Inc.
MCP6411
5-Lead Plastic Small Outline Transistor (OT) [SOT23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
c
T
L
L1
VIEW A-A
SHEET 1
Units
Dimension Limits
Number of Pins
N
e
Pitch
e1
Outside lead pitch
Overall Height
A
Molded Package Thickness
A2
Standoff
A1
E
Overall Width
E1
Molded Package Width
D
Overall Length
L
Foot Length
Footprint
L1
I
Foot Angle
c
Lead Thickness
b
Lead Width
MIN
0.90
0.89
-
0.30
0°
0.08
0.20
MILLIMETERS
NOM
6
0.95 BSC
1.90 BSC
2.80 BSC
1.60 BSC
2.90 BSC
0.60 REF
-
MAX
1.45
1.30
0.15
0.60
10°
0.26
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed 0.25mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-091D [OT] Sheet 2 of
2017 Microchip Technology Inc.
DS20005791B-page 27
MCP6411
5-Lead Plastic Small Outline Transistor (OT) [SOT23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
X
SILK SCREEN
5
Y
Z
C
G
1
2
E
GX
RECOMMENDED LAND PATTERN
Units
Dimension Limits
E
Contact Pitch
C
Contact Pad Spacing
X
Contact Pad Width (X5)
Contact Pad Length (X5)
Y
Distance Between Pads
G
Distance Between Pads
GX
Overall Width
Z
MIN
MILLIMETERS
NOM
0.95 BSC
2.80
MAX
0.60
1.10
1.70
0.35
3.90
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-2091A [OT]
DS20005791B-page 28
2017 Microchip Technology Inc.
MCP6411
APPENDIX A:
REVISION HISTORY
Revision B (June 2017)
• Minor editorial correction.
Revision A (June 2017)
• Original Release of this Document.
2017 Microchip Technology Inc.
DS20005791B-page 29
MCP6411
NOTES:
DS20005791B-page 30
2017 Microchip Technology Inc.
MCP6411
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
[X](1)
-X
/XX
Tape and Reel Temperature Package
Range
Option
Device:
MCP6411T:
Temperature
Range:
E
Package:
LTY*
OT
Examples:
a)
MCP6411T-E/LTY:
b)
MCP6411T-E/OT:
Single Op Amp (Tape and Reel)
(SC70, SOT-23)
Tape and Reel,
Extended Temperature,
5LD SC-70 package
Tape and Reel,
Extended Temperature,
5LD SOT-23 package
= -40°C to +125°C (Extended)
= Plastic Package (SC70), 5-lead
= Plastic Small Outline Transistor (SOT-23), 5-lead
* Y = Nickel palladium gold manufacturing designator. Only
available on the TDFN package.
2017 Microchip Technology Inc.
Note 1:
Tape and Reel identifier only appears in
the catalog part number description. This
identifier is used for ordering purposes
and is not printed on the device package.
Check with your Microchip Sales Office
for package availability with the Tape and
Reel option.
DS20005791B-page 31
MCP6411
NOTES:
DS20005791B-page 32
2017 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory,
CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ,
KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus,
maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip
Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST
Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
ClockWorks, The Embedded Control Solutions Company,
EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,
mTouch, Precision Edge, and Quiet-Wire are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo,
CodeGuard, CryptoAuthentication, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICSP, Inter-Chip Connectivity, JitterBlocker,
KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF,
MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple
Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI,
SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC,
USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and
ZENA are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
Silicon Storage Technology is a registered trademark of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip Technology
Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2017, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-1879-5
2017 Microchip Technology Inc.
DS20005791B-page 33
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Finland - Espoo
Tel: 358-9-4520-820
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Austin, TX
Tel: 512-257-3370
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Novi, MI
Tel: 248-848-4000
Houston, TX
Tel: 281-894-5983
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Tel: 317-536-2380
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Tel: 951-273-7800
Raleigh, NC
Tel: 919-844-7510
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20005791B-page 34
China - Dongguan
Tel: 86-769-8702-9880
China - Guangzhou
Tel: 86-20-8755-8029
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-3326-8000
Fax: 86-21-3326-8021
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
India - Pune
Tel: 91-20-3019-1500
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
France - Saint Cloud
Tel: 33-1-30-60-70-00
Germany - Garching
Tel: 49-8931-9700
Germany - Haan
Tel: 49-2129-3766400
Germany - Heilbronn
Tel: 49-7131-67-3636
Germany - Karlsruhe
Tel: 49-721-625370
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Germany - Rosenheim
Tel: 49-8031-354-560
Israel - Ra’anana
Tel: 972-9-744-7705
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Italy - Padova
Tel: 39-049-7625286
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Norway - Trondheim
Tel: 47-7289-7561
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Taiwan - Kaohsiung
Tel: 886-7-213-7830
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Poland - Warsaw
Tel: 48-22-3325737
Romania - Bucharest
Tel: 40-21-407-87-50
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Gothenberg
Tel: 46-31-704-60-40
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
2017 Microchip Technology Inc.
11/07/16
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