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MIC2085-JYQS

MIC2085-JYQS

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    SSOP16_150MIL

  • 描述:

    IC CTRLR HOT SWAP SGL 16-QSOP

  • 数据手册
  • 价格&库存
MIC2085-JYQS 数据手册
MIC2085 Single-Channel Low Voltage Hot Swap Controller Features General Description • • • • • The MIC2085 is a single channel, positive voltage, hot swap controller designed to allow the safe insertion of boards into live system backplanes. The MIC2085 is available in a 16-pin QSOP package. Using a few external components and by controlling the gate drive of an external N-Channel MOSFET device, the MIC2085 provides inrush current limiting and output voltage slew rate control in harsh, critical power supply environments. Additionally, a circuit breaker function will latch the output MOSFET off if the current limit threshold is exceeded for a programmed period of time. The device’s array of features provide a simplified yet robust solution for many network applications in meeting the power supply regulation requirements and affords protection of critical downstream devices and components. • • • • • • • • • • Pin-for-Pin Functional Equivalent to the LTC1642 2.3V to 16.5V Supply Voltage Operation Surge Voltage Protection to 33V Operating Temperature Range –40°C to +85°C Active Current Regulation Limits Inrush Current Independent of Load Capacitance Programmable Inrush Current Limiting Analog Foldback Current Limiting Electronic Circuit Breaker Dual-Level Overcurrent Fault Sensing Fast Response to Short-Circuit Conditions ( 0V, VCC = 16.5V Start cycle, VGATE > 0V, VCC = 2.3V /FAULT = 0, VGATE > 1V, VCC = 16.5V /FAULT = 0, VGATE > 1V, VCC = 2.3V ON rising ON falling Specification for packaged product only. DS20006094A-page 4  2019 Microchip Technology Inc. MIC2085 AC ELECTRICAL CHARACTERISTICS (Note 1) Parameters Sym. Min. Typ. Max. Units Fast Overcurrent Sense to GATE Low Trip Time tOCFAST — 1 — μs VCC = 5V VCC – VSENSE = 100 mV CGATE = 10 nF, See Figure 1-1 Slow Overcurrent Sense to GATE Low Trip Time tOCSLOW — 5 — μs VCC = 5V VCC – VSENSE = 50 mV CGATE = 0 nF, See Figure 1-1 ON Delay Filter tONDLY — 20 — μs — FB Delay Filter tFBDLY — 20 — μs — Note 1: Conditions Specification for packaged product only. Timing Diagrams tONDLY VTRIPFAST Arm Fast Comparator 48mV (VCC – VSENSE) Arm Slow Comparator 1.24V ON 0 tOCSLOW 0 tOCFAST tSTART tPOR 1.24V VGATE 1V 1V CPOR 0 0 1.24V CFILTER GATE 0 0 FIGURE 1-1: Current Limit Response. 1.24V FB 0 /POR 0 FB tPOR 0 1.24V CPOR 0 /POR 0 FIGURE 1-2: Power-On Reset Response. FIGURE 1-3: Timing. Current Limit Threshold (mV) 1.24V Power-On Start-Up Delay 50 20 0 200 400 600 800 1000 FB Voltage (mV) FIGURE 1-4: Response.  2019 Microchip Technology Inc. Foldback Current Limit DS20006094A-page 5 MIC2085 TEMPERATURE SPECIFICATIONS Parameters Sym. Min. Typ. Max. Units Conditions Operating Temperature Range — –40 — +85 °C — Maximum Junction Temperature TJ — — +125 °C — JA — 112 — °C/W — Temperature Ranges Package Thermal Resistances Thermal Resistance, QSOP 16-Ld Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability. DS20006094A-page 6  2019 Microchip Technology Inc. MIC2085 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 34 3.5 3.0 2.5 30 VCC = 16.5V VCC = 5V 2.0 1.5 ITIMER (μA) SUPPLY CURRENT (mA) 4.0 26 22 18 1.0 0.5 VCC = 2.3V 14 0.0 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FIGURE 2-1: Temperature. Supply Current vs. FIGURE 2-4: vs. Temperature. VCC = 16.5V 3 2 VCC = 2.3V 1 1.6 1.4 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FIGURE 2-2: Power-On Reset Timer Current vs. Temperature. VCC = 5V FIGURE 2-5: Overcurrent Timer (Off) Current vs. Temperature. 30 9 8 25 VCC = 16.5V 5 4 VCC = 5V IGATE (μA) ICPOR (mA) VCC = 2.3V 0 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) 10 3 2 Overcurrent Timer Current 4 VCC = 16.5V ITIMER (mA) ICPOR (μA) VCC = 5V 2.0 7 6 VCC = 2.3V 5 2.4 1.8 VCC = 5V 10 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) 2.6 2.2 VCC = 16.5V 20 10 VCC = 2.3V 5 1 0 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FIGURE 2-3: Power-On Reset Timer (Off) Current vs. Temperature.  2019 Microchip Technology Inc. VCC = 16.5V 15 VCC = 2.3V VCC = 5V 0 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FIGURE 2-6: Temperature. Gate Pull-Up Current vs. DS20006094A-page 7 MIC2085 25 100 90 20 IGATEOFF (mA) 80 IGATE ( A) 15 10 5 70 VCC = 16.5V 60 50 40 VCC = 5V 30 VCC = 2.3V 20 0 2 4 6 8 10 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) 10 12 14 16 18 VCC (V) FIGURE 2-7: VCC. Gate Pull-Up Current vs FIGURE 2-10: Temperature. 600 16 VCC = 5V 500 12 10 VCC = 16.5V 8 6 4 IGATEOFF (mA) 14 VGS (V) Gate Sink Current vs. VCC = 2.3V 400 12VCC 300 200 5VCC 100 2 0 0 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) 22 20 18 16 14 12 10 8 6 4 2 0 2 External Gate Drive vs. 2 4 6 8 10 12 14 VGATE (V) FIGURE 2-11: Voltage. Gate Sink Current vs. Gate 1.25 1.24 VTH (mV) VGS (V) FIGURE 2-8: Temperature. 0 VCC = 16.5V 1.23 VCC = 2.3V 1.22 VCC = 5V 1.21 4 6 8 10 12 14 16 18 VCC (V) FIGURE 2-9: DS20006094A-page 8 External Gate Drive vs. VCC. 1.20 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FIGURE 2-12: POR Delay/Overcurrent Timer Threshold vs. Temperature.  2019 Microchip Technology Inc. MIC2085 1.30 120 VTRIPFAST (mV) 110 105 VCC = 2.3V 100 95 90 V = 5V CC 85 VCC = 16.5V ON THRESHOLD (V) 115 FIGURE 2-16: vs. Temperature. 55 47 VCC = 16.5V 45 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FIGURE 2-14: Current Limit Threshold (Slow Trip) vs. Temperature. UVLO THRESHOLD (V) VCC = 2.3V VCC = 16.5V VCC = 5V 1.10 1.05 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FIGURE 2-17: vs. Temperature. ON Pin Threshold (Falling) 40 2.5 2.4 UVLO+ 2.2 2.1 2.0 UVLO– 1.8 1.7 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FIGURE 2-15: Temperature. ON THRESHOLD (V) VCC = 5V 1.9 ON Pin Threshold (Rising) 1.15 UVLO Threshold vs.  2019 Microchip Technology Inc. ON PIN INPUT CURRENT (nA) VTRIPSLOW (mV) VCC = 2.3V 49 2.3 VCC = 2.3V 1.20 53 51 VCC = 5V 1.20 1.15 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) 80 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FIGURE 2-13: Current Limit Threshold (Fast Trip) vs. Temperature. VCC = 16.5V 1.25 35 30 25 20 VCC = 16.5V 15 10 VCC = 2.3V VCC = 5V 5 0 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FIGURE 2-18: Temperature. ON Input Current vs. DS20006094A-page 9 COMPARATOR OFFSET VOLTAGE (V) MIC2085 FB THRESHOLD (V) 1.30 VCC = 16.5V 1.25 1.20 VCC = 2.3V VCC = 5V 1.15 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FB (Power Good) Threshold 0.4 0.3 VCC = 5V 0.2 VCC = 16.5V 0.1 VCC = 2.3V 0.0 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) FIGURE 2-22: vs. Temperature. Comparator Offset Voltage VCC = 16.5V 1.25 VCC = 2.3V V CC CPOR ON 1V/div 1V/div 5V/div 1.30 1.20 1.15 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) VIN = 12V RLOAD = 4.8Ω CLOAD = 1000 μF IIN =IOUT 1A/div OVERVOLTAGE PIN THRESHOLD (V) FIGURE 2-19: vs. Temperature. 0.5 TIME (20ms/div.) FIGURE 2-20: vs. Temperature. Overvoltage Pin Threshold FIGURE 2-23: 12V Hot Insert Response. VCC = 2.3V 14 10 -40 -20 0 20 40 60 80 100 TEMPERATURE (°C) VIN = 12V RLOAD = 4.8Ω CLOAD = 1000 μF VOUT 5V/div 18 VCC = 5V CPOR 1V/div VCC = 16.5V /POR 10V/div IPULLUP (μA) 22 ON 1V/div 26 TIME (20ms/div.) FIGURE 2-21: Output Signal Pull-Up Current vs. Temperature. DS20006094A-page 10 FIGURE 2-24: 12V Turn-On Response.  2019 Microchip Technology Inc. VIN = 12V RLOAD = 0 CLOAD = 1000 μF I IN 1A/div VOUT 5V/div VIN = 12V RLOAD = 3.4Ω CLOAD = 5700 μF /FAULT 10V/div VOUT /FAULT VCC 10V/div 10V/div 5V/div CFILTER ON 1V/div 1V/div MIC2085 TIME (10ms/div.) Inrush Current Response. FIGURE 2-28: Turn-On into Short-Circuit. ON IIN = IOUT GATE 20V/div 1V/div 2A/div FIGURE 2-25: TIME (10ms/div.) VOUT 5V/div VIN = 12V RLOAD = 4.8Ω CLOAD = 1000 μF SW2 = HIGH TIME (2.5ms/div.) Turn Off: Normal Discharge. ON IIN = IOUT GATE 2A/div 20V/div 1V/div FIGURE 2-26: VOUT 5V/div VIN = 12V RLOAD = 4.8Ω CLOAD = 1000 μF SW2 = LOW TIME (2.5ms/div.) FIGURE 2-27: Discharge. Turn Off: Crowbar  2019 Microchip Technology Inc. DS20006094A-page 11 MIC2085 RSENSE Ÿ 5% IIN VIN 12V 1 2 3 C4 0.47μF Q1 Si7892DP (PowerPAK™ SO-8) VOUT 4 RLOAD R1 Ÿ 19,20 R2 NŸ 1% SW1 ON/OFF VCC 18 SENSE GATE 4 IOUT CLOAD R4 NŸ 1% 17 C2 0.022μF ON FB R3 NŸ 1% 8 R5 NŸ 1% MIC2085 /POR CPOR 3 C3 0.047μF GND 9,10 5 Downstream Signal CFILTER 2 C4 0.047μF For clarity, not all pins are shown. FIGURE 2-29: DS20006094A-page 12 Test Circuit.  2019 Microchip Technology Inc. MIC2085 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin Number MIC2085 PIN FUNCTION TABLE Pin Name Description CRWBR Overvoltage Timer and Crowbar Circuit Trigger: A capacitor connected to this pin sets the timer duration for which an overvoltage condition will trigger an external crowbar circuit. This timer begins when the OV input rises above its threshold as an internal 45 μA current source charges the capacitor. Once the voltage reaches 470 mV, the current increases to 1.5 mA. CFILTER Current Limit Response Timer: A capacitor connected to this pin defines the period of time (tOCSLOW) in which an overcurrent event must last to signal a fault condition and trip the circuit breaker. If no capacitor is connected, then tOCSLOW defaults to 5 μs. CPOR Power-On Reset Timer: A capacitor connected between this pin and ground sets the start-up delay (tSTART) and the power-on reset interval (tPOR). When VCC rises above the UVLO threshold, the capacitor connected to CPOR begins to charge. When the voltage at CPOR crosses 1.24V, the start-up threshold (VSTART), a start cycle is initiated if ON is asserted while capacitor CPOR is immediately discharged to ground. When the voltage at FB rises above VFB, capacitor CPOR begins to charge again. When the voltage at CPOR rises above the power-on reset delay threshold (VTH), the timer resets by pulling CPOR to ground, and /POR is deasserted. If CPOR = 0, then tSTART defaults to 20 μs. ON ON Input: Active-high. The ON pin, an input to a Schmitt-triggered comparator used to enable/disable the controller, is compared to a VTH reference with 100 mV of hysteresis. Once a logic high is applied to the ON pin (VON > 1.24V), a start-up sequence is initiated as the GATE pin starts ramping up towards its final operating voltage. When the ON pin receives a low logic signal (VON < 1.14V), the GATE pin is grounded and /FAULT is high if VCC is above the UVLO threshold. ON must be low for at least 20 μs in order to initiate a start-up sequence. Additionally, toggling the ON pin LOW to HIGH resets the circuit breaker. /POR Power-On Reset Output: Open-drain N-Channel device, active-low. This pin remains asserted during start-up until a time period tPOR after the FB pin voltage rises above the power good threshold (VFB). The timing capacitor CPOR determines tPOR. When an output undervoltage condition is detected at the FB pin, /POR is asserted for a minimum of one timing cycle, tPOR. The /POR pin has a weak pull-up to VCC. /FAULT Circuit Breaker Fault Status Output: Open-drain N-Channel device, active-low. The /FAULT pin is asserted when the circuit breaker trips due to an overcurrent condition. Also, this pin indicates undervoltage lockout and overvoltage fault conditions. The /FAULT pin has a weak pull-up to VCC. 7 FB Power Good Threshold Input: This input is internally compared to a 1.24V reference with 3 mV of hysteresis. An external resistive divider may be used to set the voltage at this pin. If this input momentarily goes below 1.24V, then /POR is activated for one timing cycle, tPOR, indicating an output undervoltage condition. The /POR signal deasserts one timing cycle after the FB pin exceeds the power good threshold by 3 mV. A 5 μs filter on this pin prevents glitches from inadvertently activating this signal. 8 GND 1 2 3 4 5 6 9 OV  2019 Microchip Technology Inc. Ground Connection: Tie to analog ground OV Input: When the voltage on OV exceeds its trip threshold, the GATE pin is pulled low and the CRWBR timer starts. If OV remains above its threshold long enough for CRWBR to reach its trip threshold, the circuit breaker is tripped. Otherwise, the GATE pin begins to ramp up one POR timing cycle after OV drops below its trip threshold. DS20006094A-page 13 MIC2085 TABLE 3-1: PIN FUNCTION TABLE (CONTINUED) Pin Number MIC2085 Pin Name 10 COMPOUT 11 COMP+ Comparator’s Non-Inverting Input. 12 COMP– Comparator’s Inverting Input. 13 REF Reference Output: 1.24V nominal. Tie a 0.1 μF capacitor to ground to ensure stability. GATE Gate Drive Output: Connects to the gate of an external N-Channel MOSFET. An internal clamp ensures that no more than 13V is applied between the GATE pin and the source of the external MOSFET. The GATE pin is immediately brought low when either the circuit breaker trips or an undervoltage lockout condition occurs. SENSE Circuit Breaker Sense Input: A resistor between this pin and VCC sets the current limit threshold. Whenever the voltage across the sense resistor exceeds the slow trip current limit threshold (VTRIPSLOW), the GATE voltage is adjusted to ensure a constant load current. If VTRIPSLOW (48 mV) is exceeded for longer than time period tOCSLOW, then the circuit breaker is tripped and the GATE pin is immediately pulled low. If the voltage across the sense resistor exceeds the fast trip circuit breaker threshold, VTRIPFAST, at any point due to fast, high amplitude power supply faults, then the GATE pin is immediately brought low without delay. To disable the circuit breaker, the SENSE and VCC pins can be tied together. The default VTRIPFAST for either device is 95 mV. Other fast trip thresholds are available: 150 mV, 200 mV, or OFF (VTRIPFAST disabled). Please contact Microchip for availability of other options. VCC Positive Supply Input: 2.3V to 16.5V. The GATE pin is held low by an internal undervoltage lockout circuit until VCC exceeds a threshold of 2.18V.If VCC exceeds 16.5V, an internal shunt regulator protects the chip from VCC and SENSE pin voltages up to 33V. 14 15 16 DS20006094A-page 14 Description Uncommitted Comparator’s Open-Drain Output.  2019 Microchip Technology Inc. MIC2085 4.0 FUNCTIONAL DESCRIPTION 4.1 Hot Swap Insertion When circuit boards are inserted into live system backplanes and supply voltages, high inrush currents can result due to the charging of bulk capacitance that resides across the supply pins of the circuit board. This inrush current, although transient in nature, may be high enough to cause permanent damage to on-board components or may cause the system’s supply voltages to go out of regulation during the transient period which may result in system failures. The MIC2085 acts as a controller for external N-Channel MOSFET devices in which the gate drive is controlled to provide inrush current limiting and output voltage slew rate control during hot plug insertions. 4.2 Power Supply VCC is the supply input to the MIC2085 controller with a voltage range of 2.3V to 16.5V. The VCC input can withstand transient spikes up to 33V. In order to help suppress transients and ensure stability of the supply voltage, a capacitor of 1.0 μF to 10 μF from VCC to ground is recommended. Alternatively, a low pass filter, shown in the typical application circuit, can be used to eliminate high frequency oscillations as well as help suppress transient spikes. 4.3 Start-Up Cycle When the voltage on the ON pin rises above its threshold of 1.24V, the MIC2085/6 first checks that its supply (VCC) is above the UVLO threshold. If it does check above, the device is enabled and an internal 2 μA current source begins charging capacitor CPOR to 1.24V to initiate a start-up sequence (i.e., start-up delay times out). Once the start-up delay (tSTART) elapses, CPOR is pulled immediately to ground and a 15 μA current source begins charging the GATE output to drive the external MOSFET that switches VIN to VOUT. The programmed start-up delay is calculated using the following equation: EQUATION 4-1: V TH t START = C POR  ---------------  0.62  C POR  F  I CPOR Where: VTH = 1.24V, the POR delay threshold. ICPOR = 2 μA, the POR timer current.  2019 Microchip Technology Inc. As the GATE voltage continues ramping toward its final value (VCC + VGS) at a defined slew rate (See the Load Capacitance Dominated Start-Up/Gate Capacitance Dominated Start-Up sections), a second CPOR timing cycle begins if: 1. 2. /FAULT is high and CFILTER is low (i.e., not an overvoltage, undervoltage lockout, or overcurrent state). This second timing cycle, tPOR, starts when the voltage at the FB pin exceeds its threshold (VFB) indicating that the output voltage is valid. The time period tPOR is equivalent to tSTART and sets the interval for the /POR to go Low-to-High after power is good (See Figure 1-2). Active current regulation is employed to limit the inrush current transient response during start-up by regulating the load current at the programmed current limit value See the Current Limiting and Dual-Level Circuit Breaker section. The following equation is used to determine the nominal current limit value: EQUATION 4-2: V TRIPSLOW 48mV I LIM = ---------------------------- = ------------------R SENSE R SENSE Where: VTRIPSLOW = The current limit slow trip threshold found in Electrical Characteristics. RSENSE = The selected value that will set the desired current limit. There are two basic start-up modes for the MIC2085/6: • Start-up dominated by load capacitance. • Start-up dominated by total gate capacitance. The magnitude of the inrush current delivered to the load will determine the dominant mode. If the inrush current is greater than the programmed current limit (ILIM), then load capacitance is dominant. Otherwise, gate capacitance is dominant. The expected inrush current may be calculated using the following equation: EQUATION 4-3: C LOAD C LOAD INRUSH  I GATE  ---------------- 15A  ----------------C GATE C GATE Where: IGATE = The pin pull-up current. CLOAD = The load capacitance. CGATE = The total GATE capacitance (CISS of the external MOSFET and any external capacitor connected from the MIC2085/6 GATE pin to ground). DS20006094A-page 15 MIC2085 4.3.1 LOAD CAPACITANCE DOMINATED START-UP In this case, the load capacitance, CLOAD, is large enough to cause the inrush current to exceed the programmed current limit, but is less than the fast-trip threshold (or the fast-trip threshold is disabled, ‘M’ option). During start-up under this condition, the load current is regulated at the programmed current limit value (ILIM) and held constant until the output voltage rises to its final value. The output slew rate and equivalent GATE voltage slew rate is computed by the following equation: EQUATION 4-4: EQUATION 4-6: I GATE C GATE  MIN  = --------------  C LOAD I LIM Where: CGATE = The sum of the MOSFET input capacitance (CISS) and the value of the external capacitor connected to the GATE pin of the MOSFET. Once CGATE is determined, use the following equation to determine the output slew rate for gate capacitance dominated start-up. EQUATION 4-7: I LIM d V OUT  dt = ----------------C LOAD I GATE dV OUT  dt  OUTPUT  = ---------------C GATE Where: ILIM = The programmed current limit value. Consequently, the value of CFILTER must be selected to ensure that the overcurrent response time, tOCSLOW, exceeds the time needed for the output to reach its final value. For example, given a MOSFET with an input capacitance CISS = CGATE = 4700 pF, CLOAD is 2200 μF, and ILIM is set to 6A with a 12V input, then the load capacitance dominates as determined by the calculated INRUSH > ILIM. Therefore, the output voltage slew rate determined from Equation 4-4 is: Table 4-1 depicts the output slew rate for various values of CGATE. TABLE 4-1: EQUATION 4-5: 6A dV OUT  dt = -------------------- = 2.73V /ms 2200F 4.3.2 GATE CAPACITANCE DOMINATED START-UP In this case, the value of the load capacitance relative to the GATE capacitance is small enough such that the load current during start-up never exceeds the current limit threshold as determined by Equation 4-3. The minimum value of CGATE that will ensure that the current limit is never exceeded is given by the equation below: DS20006094A-page 16 CGATE Output Slew Rate 0.001 μF 15 V/ms 0.01 μF 1.5 V/ms 0.1 μF 0.150 V/ms 1 μF Note 1: IGATE = 15 μA. 4.4 The resulting tOCSLOW needed to achieve a 12V output is approximately 4.5 ms. See the Power-On Reset, Start-Up, and Overcurrent Timer Delays section to calculate tOCSLOW. OUTPUT SLEW RATE SELECTION FOR GATE CAPACITANCE DOMINATED START-UP 0.015 V/ms Current Limiting and Dual-Level Circuit Breaker Many applications will require that the inrush and steady state supply current be limited at a specific value in order to protect critical components within the system. Connecting a sense resistor between the VCC and SENSE pins sets the nominal current limit value of the MIC2085 and the current limit is calculated using Equation 4-2. However, the MIC2085 exhibits foldback current limit response. The foldback feature allows the nominal current limit threshold to vary from 24 mV up to 48 mV as the FB pin voltage increases or decreases. When FB is at 0V, the current limit threshold is 24 mV and for FB ≥ 0.6V, the current limit threshold is the nominal 48 mV (see Figure 1-4 for Foldback Current Limit Response characteristic). The MIC2085 also features a dual-level circuit breaker triggered via 48 mV and 95 mV current limit thresholds sensed across the VCC and SENSE pins.  2019 Microchip Technology Inc. MIC2085 The first level of the circuit breaker functions as follows. Once the voltage sensed across these two pins exceeds 48 mV, the overcurrent timer, its duration set by capacitor CFILTER, starts to ramp the voltage at CFILTER using a 2 μA constant current source. If the voltage at CFILTER reaches the overcurrent timer threshold (VTH) of 1.24V, then CFILTER immediately returns to ground as the circuit breaker trips and the GATE output is immediately shut down. For the second level, if the voltage sensed across VCC and SENSE exceeds 95 mV at any time, the circuit breaker trips and the GATE shuts down immediately, bypassing the overcurrent timer period. To disable current limit and circuit breaker operation, tie the SENSE and VCC pins together and the CFILTER pin to ground. 4.5 Output Undervoltage Detection The MIC2085 employs output undervoltage detection by monitoring the output voltage through a resistive divider connected at the FB pin. During turn-on, while the voltage at the FB pin is below the threshold (VFB), the /POR pin is asserted low. Once the FB pin voltage crosses VFB, a 2 μA current source charges capacitor CPOR. Once the CPOR pin voltage reaches 1.24V, the time period tPOR elapses as the CPOR pin is pulled to ground and the /POR pin goes high. If the voltage at FB drops below VFB for more than 10 μs, the /POR pin resets for at least one timing cycle defined by tPOR (see Application Information for an example). 4.6 A capacitor connected to CFILTER is used to set the timer that activates the circuit breaker during overcurrent conditions. When the voltage across the sense resistor exceeds the slow trip current limit threshold of 48 mV, the overcurrent timer begins to charge for a period, tOCSLOW, determined by CFILTER. If no capacitor is used at CFILTER, then tOCSLOW defaults to 5 μs. If tOCSLOW elapses, then the circuit breaker is activated and the GATE output is immediately pulled to ground. The following equation is used to determine the overcurrent timer period, tOCSLOW. EQUATION 4-8: V TH t OCSLOW = C FILTER  -----------------  0.062  C FILTER  F  I TIMER Where: VTH = The CFILTER timer threshold: 1.24V. ITIMER = The overcurrent timer current: 20 μA. Table 4-2 and Table 4-3 provide a quick reference for several timer calculations using select standard value capacitors. TABLE 4-2: Input Overvoltage Protection The MIC2085 monitors and detects overvoltage conditions in the event of excessive supply transients at the input. Whenever the overvoltage threshold (VOV) is exceeded at the OV pin, the GATE is pulled low and the output is shut off. The GATE will begin ramping one POR timing cycle after the OV pin voltage drops below its threshold. An external CRWBR circuit, as shown in the Typical Application Circuit, provides a time period that an overvoltage condition must exceed in order to trip the circuit breaker. When the OV pin exceeds the overvoltage threshold (VOV), the CRWBR timer begins charging the CRWBR capacitor initially with a 45 μA current source.Once the voltage at CRWBR exceeds its threshold (VCR) of 0.47V, the CRWBR current immediately increases to 1.5 mA and the circuit breaker is tripped, necessitating a device reset by toggling the ON pin from low to high. 4.7 connected to CPOR sets the interval, tPOR, and tPOR is equivalent to the start-up delay, tSTART (see Equation 4-1). Power-On Reset, Start-Up, and Overcurrent Timer Delays The Power-On Reset delay, tPOR, is the time period for the /POR pin to go high once the voltage at the FB pin exceeds the power good threshold (VTH). A capacitor  2019 Microchip Technology Inc. CPOR SELECTED POWER-ON RESET AND START-UP DELAYS tPOR = tSTART 0.01 μF 6 ms 0.02 μF 12 ms 0.033 μF 18.5 ms 0.05 μF 30 ms 0.1 μF 60 ms 0.33 μF 200 ms TABLE 4-3: SELECTED OVERCURRENT TIMER DELAYS CFILTER tOCSLOW 1800 pF 100 μs 4700 pF 290 μs 8200 pF 500 μs 0.01 μF 620 μs 0.02 μF 1.2 ms 0.033 μF 2.0 ms 0.05 μF 3.0 ms 0.1 μF 6.2 ms 0.33 μF 20.7 ms DS20006094A-page 17 MIC2085 5.0 APPLICATION INFORMATION 5.1 Output Undervoltage Detection For output undervoltage detection, the first consideration is to establish the output voltage level that indicates “power is good.” For this example, the output value for which a 12V supply will signal “good” is 11V. Next, consider the tolerances of the input supply and FB threshold (VFB). For this example, the 12V supply varies ±5%, thus the resulting output voltage may be as low as 11.4V and as high as 12.6V. Additionally, the FB threshold has ±50 mV tolerance and may be as low as 1.19V and as high as 1.29V. Thus, to determine the values of the resistive divider network (R5 and R6) at the FB pin, shown in Figure 5-1, use the following iterative design procedure. 1. Choose R6 so as to limit the current through the divider to approximately 100 μA or less. Substituting these values into Equation 5-3 now yields R5 = 100.11 kΩ. A standard 100 kΩ ±1% is selected. Now, consider the 11.4V minimum output voltage, the lower tolerance for R6 and higher tolerance for R5, 13.17 kΩ and 101 kΩ, respectively. With only 11.4V available, the voltage sensed at the FB pin exceeds VFB(MAX), thus the /POR signal will transition from low to high, indicating “power is good” given the worse case tolerances of this example. 5.2 The external CRWBR circuit shown in Figure 5-1 consists of capacitor C4, resistor R7, NPN transistor Q2, and SCR Q3. The capacitor establishes a time duration for an overvoltage condition to last before the circuit breaker trips. The CRWBR timer duration is approximated by the following equation: EQUATION 5-4: EQUATION 5-1: V FB  MAX  1.29V R6  ------------------------ ----------------  12.9k 100A 100A R6 is chosen as 13.3 kΩ ±1%. 2. Next, determine R5 using the output “good” voltage of 11V and the following equation: EQUATION 5-2: R5 + R6 V OUT  GOOD  = V FB -------------------R6 Using some basic algebra and simplifying Equation 5-2 to isolate R5, yields: Input Overvoltage Protection C4  V CR t OVCR  -----------------------  0.01  C4  F  I CR Where: VCR = The CRWBR pin threshold: 0.47V. ICR = The CRWBR pin current during the timer period: 45 μA. See the CRWBR timer pin description in Table 3-1 for more information. A design approach similar to the previous undervoltage detection example is recommended for the overvoltage protection circuitry, resistors R2 and R3 in Figure 5-1. For input overvoltage protection, the first consideration is to establish the input voltage level that indicates an overvoltage triggering a system (output voltage) shutdown. For this example, the input value for which a 12V supply will signal an “output shutdown” is 13.2V (+10%). Similarly, from the previous example: 1. Choose R3 to satisfy 100 μA condition. EQUATION 5-5: EQUATION 5-3: V OV  MIN  1.19V R3  ------------------------  ----------------  11.9k 100A 100A V OUT  GOOD  R5 = R6 --------------------------------–1 V FB  MAX  Where: VFB(MAX) = 1.29V. VOUT(GOOD) = 11V. R6 = 13.3 kΩ. DS20006094A-page 18 R3 is chosen as 13.7 kΩ ±1%. 2. Thus, following the previous example and substituting R2 and R3 for R5 and R6, respectively, and 13.2V overvoltage for 11V output “good”, the same formula yields R2 of 138.3 kΩ. The next highest standard 1% value is 140 kΩ.  2019 Microchip Technology Inc. MIC2085 Now, consider the 12.6V maximum input voltage (VCC +5%), the higher tolerance for R3 and lower tolerance for R2, 13.84 kΩ and 138.60 kΩ, respectively. With a 12.6V input, the voltage sensed at the OV pin is below VOV(MIN), and the MIC2085 will not indicate an overvoltage condition until VCC exceeds at least 13.2V. Q1 IRF7822 (SO-8) RSENSE 0.012Ω 1 2% 2 VIN 12V 3 R2 140kΩ 1% R1 100kΩ VOUT 12V@3A 4 CLOAD 220μF C1 1μF 16 VCC R4 10Ω 15 SENSE 14 GATE 4 C2 0.022μF ON FB 7 MIC2085 9 R6 13.3kΩ 1% /POR OV /FAULT R3 13.7kΩ 1% R5 100kΩ 1% CPOR GND 3 CRWBR 8 C3 0.05μF 5 6 Downstream Signals Q2 2N4401 1 C4 0.01μF C5 0.033μF Q3 TCR22-4 *R7 180Ω Overvoltage (Input) = 13.3V Undervoltage (Output) = 11.0V POR/START-UP Delay = 30ms *R7 needed when using a sensitive gate SCR. Additional pins omitted for clarity. FIGURE 5-1: 5.3 Undervoltage/Overvoltage Circuit. PCB Connection Sense There are several configuration options for the MIC2085’s ON pin to detect if the PCB has been fully seated in the backplane before initiating a start-up cycle. In the Typical Application Circuit, the MIC2085 is mounted on the PCB with a resistive divider network connected to the ON pin. R2 is connected to a short pin on the PCB edge connector. Until the connectors mate, the ON pin is held low, which keeps the GATE output charge pump off. Once the connectors mate, the resistor network is pulled up to the input supply, 12V in this example, and the ON pin voltage exceeds its threshold (VON) of 1.24V and the MIC2085 initiates a start-up cycle. In Figure 5-2, the connection sense, consisting of a logic-level discrete MOSFET and a few resistors, allows for interrupt control from the processor or other signal controller to shut off the output of the MIC2085. R4 keeps the GATE of Q2 at VIN until the connectors are fully mated. A logic low at the /ON_OFF signal turns Q2 off and allows the ON pin to pull up above its threshold and initiate a start-up cycle. Applying a logic high at the /ON_OFF signal will turn Q2 on and short the ON pin of the MIC2085 to ground, which turns off the GATE output charge pump.  2019 Microchip Technology Inc. DS20006094A-page 19 MIC2085 Backplane PCB Edge Connector Connector VIN 12V RSENSE 0.008Ω 1 2% 2 Long Pin 3 C1 1μF Q1 Si7860DP (PowerPAKTM SO-8) CLOAD 220μF R5 10Ω Short Pin 16 R4 10kΩ 4 SENSE GATE 14 ON C2 0.01μF R1 20kΩ /ON_OFF R6 127kΩ 1% 15 VCC R2 20kΩ R3 100Ω VOUT 12V@5A 4 FB 7 R7 16.2kΩ 1% MIC2085 *Q2 /POR /FAULT PCB Connection Sense CPOR 3 Long Pin 5.4 1 Downstream Signals GND 8 C2 0.05μF GND FIGURE 5-2: 5 Undervoltage (Output) = 11.4V POR/START-UP DELAY = 30ms *Q2 is TN0201T (SOT-23) Additional pins omitted for clarity. PCB Connection Sense with ON/OFF Control. Higher UVLO Setting Once a PCB is inserted into a backplane (power supply), the internal UVLO circuit of the MIC2085 holds the GATE output charge pump off until VCC exceeds 2.18V. If VCC falls below 2V, the UVLO circuit pulls the GATE output to ground and clears the overvoltage and/or current limit faults. For a higher UVLO threshold, the circuit in Figure 5-3 can be used to delay the output MOSFET from switching on until the desired input voltage is achieved. The circuit allows the charge pump to remain off until VIN exceeds (1 + R1/R2) x 1.24V. The GATE drive output will be shut down when VIN falls below (1 + R1/R2) x 1.14V. In the example circuit (Figure 5-3), the rising UVLO threshold is set at approximately 11V and the falling UVLO threshold is established as 10.1V. The circuit consists of an external resistor divider at the ON pin that keeps the GATE output charge pump off until the voltage at the ON pin exceeds its threshold (VON) and after the start-up time relapses. DS20006094A-page 20  2019 Microchip Technology Inc. MIC2085 Q1 IRF7822 (SO-8) RSENSE 0.010Ω 1 2% 2 VIN 12V 3 VOUT 12V@4A 4 CLOAD 220μF C1 1μF R1 392kΩ 1% 16 VCC R3 10Ω 15 SENSE GATE 4 R4 127kΩ 1% 14 C2 0.01μF ON MIC2085 R2 49.9kΩ 1% FB R5 16.2kΩ 1% /POR CPOR 3 GND 7 5 Downstream Signal 8 C3 0.1μF Undervoltage Lockout (Rising) = 11.0V Undervoltage Lockout (Falling) = 10.1V Undervoltage (Output) = 11.4V POR/START-UP Delay = 60ms Additional pins omitted for clarity. FIGURE 5-3: 5.5 Higher UVLO Setting. Auto-Retry Upon Overcurrent Faults The MIC2085 can be configured for automatic restart after a fault condition. Placing a diode between the ON and/FAULT pins, as shown in Figure 5-4, will enable the auto-restart capability of the controller. When an application is configured for auto-retry, the overcurrent timer should be set to minimize the duty cycle of the overcurrent response to prevent thermal runaway of the power MOSFET. See the MOSFET Transient Thermal Issues section for further detail. A limited duty cycle is achieved when the overcurrent timer duration (tOCSLOW) is much less than the start-up delay timer duration (tSTART) and is calculated using the following equation: EQUATION 5-6: t OCSLOW Auto – Retry Duty Cycle = ----------------------  100% t START  2019 Microchip Technology Inc. DS20006094A-page 21 MIC2085 Q1 IRF7822 (SO-8) RSENSE 0.012Ω 1 5% 2 VIN 5V 3 VOUT 5V@2.5A 4 CLOAD 220μF C1 1μF R1 47kΩ 16 VCC R3 10Ω 15 SENSE GATE R2 33kΩ ON SIGNAL 4 ON FB MIC2085 6 /FAULT CPOR GND 3 C3 0.02μF Undervoltage (Output) = 4.27V POR/START-UP Delay = 12ms Circuit Breaker Response Time = 290μs Auto-Retry Duty Cycle = 2.5% Additional pins omitted for clarity. 5.6 7 R5 14.7kΩ 1% /POR FIGURE 5-4: 14 C2 0.022μF D1 1N914 /FAULT OUTPUT R4 34kΩ 1% 8 5 CFILTER Downstream Signal 2 C4 4700pF Auto-Retry Configuration. An InfiniBand™ Application Circuit The circuit in Figure 5-5 depicts a single 50W InfiniBand™ module using the MIC2085 controller. An InfiniBand™ backplane distributes bulk power to multiple plug-in modules that employ DC/DC converters for local supply requirements. The circuit in Figure 5-5 distributes 12V from the backplane to the MIC2182 DC/DC converter that steps down +12V to +3.3V for local bias. The pass transistor, Q1, isolates the MIC2182’s input capacitance during module plug-in and allows the backplane to accommodate additional plug-in modules without affecting the other modules on the backplane. The two control input signals are VBxEn_L (active-low) and a Local Power Enable (active-high). The MIC2085 in the circuit of Figure 5-5 performs a number of functions. The gate output of Q1 is enabled by the two bit input signal VBxEn_L, Local Power Enable = [0,1]. Also, the MIC2085 limits the drain current of Q1 to 7A, monitors VB_In for an overvoltage condition greater than 16V, and enables the MIC2182 DC/DC converter downstream to supply a local voltage rail. The uncommitted comparator is used to monitor VB_In for an undervoltage condition of less than 10V, indicated by a logic-low at the comparator output (COMPOUT). COMPOUT may be used to control a downstream device such as another DC/DC converter. Additionally, the MIC2085 is configured for auto-retry upon an overcurrent fault condition by placing a diode (D1) between the /FAULT and ON pins of the controller. DS20006094A-page 22  2019 Microchip Technology Inc. MIC2085 InfiniBandTM Backplane InfiniBandTM MODULE MIC2182 DC/DC Converter Q1 IRF7822 (SO-8) RSENSE ȍ 1 5% 2 Long VB_In (12V) 3 R2 Nȍ 1% Short VBxEn_L R3 Nȍ 1% R4 Nȍ 1% VIN 4 16 R6 ȍ 15 VCC SENSE 9 OV 11 COMP+ GATE 14 R7 Nȍ 1% C2 0.022μF /UV COMPOUT 10 R5 Nȍ 1% 3 12 C1 0.01μF C5 0.033μF Long Local Power Enable FIGURE 5-5: ON R1 Nȍ A 50W InfiniBand™ Application. The MIC2085 uses a low-value sense resistor to measure the current flowing through the MOSFET switch (and therefore the load). This sense resistor is nominally valued at 48 mV/ILOAD(CONT). To accommodate worst-case tolerances for both the sense resistor (allow ±3% over time and temperature for a resistor with ±1% initial tolerance) and still supply the maximum required steady-state load current, a slightly more detailed calculation must be used. The current limit threshold voltage (the “trip point”) for the MIC2085 may be as low as 40 mV, which would equate to a sense resistor value of 40 mV/ILOAD(CONT). Carrying the numbers through for the case where the value of the sense resistor is 3% high yields: EQUATION 5-7: 40mV 38.8mV = -------------------------------------------------- = ---------------------------------1.03  I LOAD  CONT  I LOAD  CONT  Once the value of RSENSE has been chosen in this manner, it is good practice to check the maximum ILOAD(CONT) that the circuit may let through in the case of tolerance build-up in the opposite direction. Here, the  2019 Microchip Technology Inc. D1 1N914 CFILTER GND Sense Resistor Selection R SENSE  MAX  /FAULT 6 REF 2 RUN/SS FB 7 COMP– C3 0.1μF Power-On Reset Output MIC2085 C4 0.022μF VB_Ret 5.7 13 CPOR /POR 5 8 R8 Nȍ 1% 3.3V @ 4A 4 CRWBR 1 GND Overvoltage (Input) = 16.0V Undervoltage (Input) = 10.0V Undervoltage (Output) & Power Good (Output) = 10.0V Circuit Breaker Response Time = 1.2ms POR/START-UP Delay = 18.5ms Auto-Retry Duty Cycle = 6.5% worst-case maximum current is found using a 55 mV trip voltage and a sense resistor that is 3% low in value. The resulting equation is: EQUATION 5-8: I LOAD  CONTMAX  = 55mV 56.7mV --------------------------------------------------- = ---------------------------------0.97  R SENSE  NOM  R SENSE  NOM  As an example, if an output must carry a continuous 6A without nuisance trips occurring, Equation 5-7 yields the following: EQUATION 5-9: 38.8mV R SENSE  MAX  = ------------------- = 6.5m 6A The next lowest standard value is 6.0 mW. At the other set of tolerance extremes for the output in question: DS20006094A-page 23 MIC2085 EQUATION 5-10: 56.7mV I LOAD  CONTMAX  = ------------------- = 9.45 A 6.0m The result is almost 10A. Knowing this final datum, we can determine the necessary wattage of the sense resistor, using P = I2R, where I will be ILOAD(CONT, MAX), and R will be 0.97 x RSENSE(NOM). These numbers yield the following: EQUATION 5-11: 2 P MAX = 10 A  5.82m = 0.582W In this example, a 1W sense resistor is sufficient. 5.8 MOSFET Selection Selecting the proper external MOSFET for use with the MIC2085 involves three straightforward tasks: 1. 2. 3. 5.9 Choice of a MOSFET that meets minimum voltage requirements. Selection of a device to handle the maximum continuous current (steady-state thermal issues). Verify the selected part’s ability to withstand any peak currents (transient thermal issues). MOSFET Voltage Requirements The first voltage requirement for the MOSFET is that the drain-source breakdown voltage of the MOSFET must be greater than VIN(MAX). For instance, a 16V input may reasonably be expected to see high-frequency transients as high as 24V. Therefore, the drain-source breakdown voltage of the MOSFET must be at least 25V. For ample safety margin and standard availability, the closest minimum value should be 30V. The second breakdown voltage criterion that must be met is a bit subtler than simple drain-source breakdown voltage. The gate of the external MOSFET is driven up to a maximum of 21V by the internal output MOSFET. At the same time, if the output of the external MOSFET (its source) is suddenly subjected to a short, the gate-source voltage will go to (21V – 0V) = 21V. Because most power MOSFETs generally have a maximum gate-source breakdown of 20V or less, the use of a Zener clamp is recommended in applications with VCC ≥ 8V. A Zener diode with 10V to 12V rating is DS20006094A-page 24 recommended as shown in Figure 5-6. At the present time, most power MOSFETs with a 20V gate-source voltage rating have a 30V drain-source break-down rating or higher. As a general tip, choose surface-mount devices with a drain-source rating of 30V or more as a starting point. Finally, the external gate drive of the MIC2085 requires a low-voltage logic level MOSFET when operating at voltage slower than 3V. There are 2.5V logic-level MOSFETs available. Please see Table 5-1 and Table 5-2 for suggested manufacturers. 5.10 MOSFET Steady-State Thermal Issues The selection of a MOSFET to meet the maximum continuous current is a fairly straightforward exercise. First, arm yourself with the following data: • The value of ILOAD(CONT, MAX.) for the output in question (see Sense Resistor Selection). • The manufacturer’s data sheet for the candidate MOSFET. • The maximum ambient temperature in which the device will be required to operate. • Any knowledge you can get about the heat sinking available to the device (e.g., can heat be dissipated into the ground plane or power plane, if using a surface-mount part? Is any airflow available?). The data sheet will almost always give a value of on resistance given for the MOSFET at a gate-source voltage of 4.5V, and another value at a gate-source voltage of 10V. As a first approximation, add the two values together and divide by two to get the on-resistance of the part with 8V of enhancement. Call this value RON. Because a heavily enhanced MOSFET acts as an ohmic (resistive) device, almost all that’s required to determine steady-state power dissipation is to calculate I2R.The one addendum to this is that MOSFETs have a slight increase in RON with increasing die temperature. A good approximation for this value is 0.5% increase in RON per °C rise in junction temperature above the point at which RON was initially specified by the manufacturer. For instance, if the selected MOSFET has a calculated RON of 10 mΩ at a TJ = 25°C, and the actual junction temperature ends up at 110°C, a good first cut at the operating value for RON would be: EQUATION 5-12: R ON  10m   1 +  110 – 25   0.005   14.3m  2019 Microchip Technology Inc. MIC2085 • Airflow works. Even a few LFM (linear feet per minute) of air will cool a MOSFET down substantially. If you can, position the MOSFET(s) near the inlet of a power supply’s fan, or the outlet of a processor’s cooling fan. • The best test of a surface-mount MOSFET for an application (assuming the above tips show it to be a likely fit) is an empirical one. Check the MOSFET's temperature in the actual layout of the expected final circuit, at full operating current. The use of a thermocouple on the drain leads, or infrared pyrometer on the package, will then give a reasonable idea of the device’s junction temperature. The final step is to make sure that the heat sinking available to the MOSFET is capable of dissipating at least as much power (rated in °C/W) as that with which the MOSFET’s performance was specified by the manufacturer. Here are a few practical tips: • The heat from a surface-mount device, such as an SO-8 MOSFET, flows almost entirely out of the drain leads. If the drain leads can be soldered down to one square inch or more, the copper will act as the heat sink for the part. This copper must be on the same layer of the board as the MOSFET drain. Q1 IRF7822 (SO-8) RSENSE 0.007Ω 1 2% 2 VIN 12V 3 *D1 1N5240B 10V 4 CLOAD 220μF C1 1μF R1 47kΩ 16 VCC R3 10Ω 15 SENSE 14 GATE ON 7 FB MIC2085 R2 33kΩ R5 13.3kΩ 1% /FAULT /POR CPOR 3 6 5 Downstream Signals GND 8 C3 0.1μF 5.11 R4 100kΩ 1% C2 0.01μF 4 FIGURE 5-6: VOUT 12V@5A Undervoltage (Output) = 11.0V POR/START-UP Delay = 60ms *Recommended for MOSFETs with gate-source breakdown of 20V or less (IRF7822 VGS(MAX) = 12V) for catastrophic output short circuit protection. Additional pins omitted for clarity. Zener-Clamped MOSFET Gate. MOSFET Transient Thermal Issues Having chosen a MOSFET that will withstand the imposed voltage stresses, and the worse case continuous I2R power dissipation which it will see, it remains only to verify the MOSFET’s ability to handle short-term overload power dissipation without overheating. A MOSFET can handle a much higher pulsed power without damage than its continuous dissipation ratings would imply. The reason for this is that, like everything else, thermal devices (silicon die, lead frames, etc.) have thermal inertia. In terms related directly to the specification and use of power MOSFETs, this is known as “transient thermal impedance,” or Zθ(JA). Almost all power MOSFET data sheets give a Transient Thermal Impedance Curve. For example, take the following case: VIN = 12V, tOCSLOW has been set to 100 ms, ILOAD(CONT. MAX) is 2.5A, the slow-trip threshold is 48 mV, nominal, and the fast-trip  2019 Microchip Technology Inc. threshold is 95 mV. If the output is accidentally connected to a 3Ω load, the output current from the MOSFET will be regulated to 2.5A for 100 ms (tOCSLOW) before the part trips. During that time, the dissipation in the MOSFET is given by: EQUATION 5-13: P = EI E MOSFET =  12V – 2.5 A  3  = 4.5V P MOSFET = 4.5V  2.5 A = 11.25W for 100ms At first glance, it would appear that a really hefty MOSFET is required to withstand this sort of fault condition. This is where the transient thermal DS20006094A-page 25 MIC2085 impedance curves become very useful. Figure 5-7 shows the curve for the Vishay (Siliconix) Si4410DY, a commonly used SO-8 power MOSFET. EQUATION 5-14: Taking the simplest case first, we’ll assume that once a fault event such as the one in question occurs, it will be a long time – 10 minutes or more – before the fault is isolated and the channel is reset. In such a case, we can approximate this as a “single pulse” event, that is to say, there’s no significant duty cycle. Then, reading up from the X-axis at the point where “Square Wave Pulse Duration” is equal to 0.1 sec (100 ms), we see that the Zθ(JA) of this MOSFET to a highly infrequent event of this duration is only 8% of its continuous Rθ(JA). T J  T A  MAX  + This particular part is specified as having an Rθ(JA) of 50°C/W for intervals of 10 seconds or less. Thus: Assume TA = 55°C maximum, 1 square inch of copper at the drain leads, no airflow. Recalling from our previous approximation hint, the part has an RON of (0.0335/2) = 17 mΩ at 25°C. Assume it has been carrying just about 2.5A for some time. When performing this calculation, be sure to use the highest anticipated ambient temperature (TA(MAX)) in which the MOSFET will be operating as the starting temperature, and find the operating junction temperature increase (∆TJ) from that point. Then, as shown next, the final junction temperature is found by adding TA(MAX) and ∆TJ. Because this is not a closed-form equation, getting a close approximation may take one or two iterations, but it’s not a hard calculation to perform, and tends to converge quickly. Then the starting (steady-state) TJ is: T J  T A  MAX  + T J 2  R ON +  T A  MAX  – T A   0.005/C   R ON    I  R JA T J  55C +  17m +  55C – 25C   0.005   17m   2  2.5 A  50C/W T J   55C + 0.122W   50C/W  61.1C Iterate the calculation once to see if this value is within a few percent of the expected final value. For this iteration we will start with TJ equal to the already calculated value of 61.1°C: EQUATION 5-15: TJ  TA +  17m +  61.1C – 25C   0.005   17m    2.5 A 2  50C/W T J  55C + 0.125W  50C/W  61.27C So the original approximation of 61.1°C was very close to the correct value. We will use TJ = 61°C. Finally, add (11.25W)(50°C/W)(0.08) = 45°C to the steady-state TJ to get TJ(TRANSIENT MAX.) = 106°C. This is an acceptable maximum junction temperature for this part. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 t1 1. Duty Cycle, D = t2 2. Per Unit Base = R thJA = 50° C/W 0.02 3. TJM – TA = PDM ZthJA (t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) FIGURE 5-7: DS20006094A-page 26 Transient Thermal Impedance.  2019 Microchip Technology Inc. MIC2085 5.12 PCB Layout Considerations feedback and overvoltage resistive networks are selected for a12V application (from Figure 5-1). Many hot swap applications will require load currents of several amperes. Therefore, the power (VCC and Return) trace widths (W) need to be wide enough to allow the current to flow while the rise in temperature for a given copper plate (e.g., 1 oz. or 2 oz.) is kept to a maximum of 10°C ~ 25°C. Also, these traces should be as short as possible in order to minimize the IR drops between the input and the load. Because of the low values of the sense resistors used with the MIC2085 controller, special attention to the layout must be used in order for the device’s circuit breaker function to operate properly. Specifically, the use of a 4-wire Kelvin connection to measure the voltage across RSENSE is highly recommended. Kelvin sensing is simply a means of making sure that any voltage drops in the power traces connecting to the resistors does not get picked up by the traces themselves. Additionally, these Kelvin connections should be isolated from all other signal traces to avoid introducing noise onto these sensitive nodes. Figure 5-8 illustrates a recommended, multi-layer layout for the RSENSE, Power MOSFET, timer(s), overvoltage and feedback network connections. The Finally, plated-through vias are utilized to make circuit connections to the power and ground planes. The trace connections with indicated vias should follow the example shown for the GND pin connection in Figure 5-8. Current Flow to the Load *POWER MOSFET (SO-8) *SENSE RESISTOR (2512) W D G D S D S D S Current Flow to the Load W **R4 ȍ Via to GND Plane **CGATE Current Flow from the Load Via to GND Plane OV 9 R2 Nȍ 1% Via to POWER (VCC) Plane 8 GND COMPOUT 10 COMP+ 11 6 /FAULT **CPOR 7 FB COMP– 12 5 /POR REF 13 ON 4 GATE 14 SENSE 15 2 CFILTER **CFILTER 3 CPOR VCC 16 1 CRWBR MIC2085 R7 Nȍ 1% R5 Nȍ 1% R6 Nȍ 1% W DRAWING IS NOT TO SCALE *See Table 5-1 and 5-2 for part numbers and vendors. **Optional components. Trace width (W) guidelines given in “PCB Layout Recommendations” section of the data sheet. FIGURE 5-8: Recommended PCB Layout for Sense Resistor, Power MOSFET, and Feedback/Overvoltage Network.  2019 Microchip Technology Inc. DS20006094A-page 27 MIC2085 5.13 MOSFET and Sense Resistor Vendors Device types and manufacturer contact information for power MOSFETs and sense resistors is provided in Table 5-1 and Table 5-2. Some of the recommended MOSFETs include a metal heat sink on the bottom side of the package. The recommended trace for the MOSFET Gate of Figure 5-8 must be redirected when using MOSFETs packaged in this style. Contact the device manufacturer for package information. TABLE 5-1: MOSFET VENDORS Vendor Key MOSFET Type(s) Vishay (Siliconix) International Rectifier Contact Information Si4420DY (SO-8 package) IOUT ≤ 10A Si4442DY (SO-8 package) IOUT = 10A – 15A, VCC ≤ 5V Si3442DV (SO-8 package) IOUT ≤ 3A, VCC ≤ 5V Si7860DP (PowerPAK™ SO-8) IOUT ≤ 12A Si7892DP (PowerPAK™ SO-8) IOUT ≤ 15A Si7884DP (PowerPAK™ SO-8) IOUT ≤ 15A SUB60N06-18 (TO-263) IOUT ≥ 20A, VCC ≥ 5V www.siliconix.com (203) 452-5664 SUB70N04-10 (TO-263) IOUT ≥ 20A, VCC ≥ 5V IRF7413 (SO-8 package) IOUT ≤ 10A IRF7457 (SO-8 package) IOUT ≤ 10A IRF7822 (SO-8 package) IOUT = 10A – 15A, VCC ≤ 5V IRLBA1304 (Super220™) IOUT ≥ 20A, VCC ≥ 5V FDS6680A (SO-8 package) IOUT ≤ 10A www.irf.com (310) 322-3331 FDS6690A (SO-8 package) IOUT ≥ 10A, VCC ≥ 5V www.fairchildsemi.com (207) 775-8100 Philips PH3230 (SOT669-LFPAK) IOUT ≥ 20A www.philips.com Hitachi HAT2099H (LFPAK) IOUT ≥ 20A www.halsp.hitachi.com (408) 433-1990 Fairchild Semiconductor Note 1: Applications (Note 1) These devices are not limited to these conditions in many cases, but these conditions are provided as a helpful reference for customer applications. TABLE 5-2: SENSE RESISTOR VENDORS Vendor Sense Resistors Contact Information Vishay (Dale) “WSL” Series (203) 452-5664 IRC “OARS” Series ”LR” Series (second source to “WSL”) (828) 264-8861 DS20006094A-page 28  2019 Microchip Technology Inc. MIC2085 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 16-Lead QSOP* XXXX -XXXX WNNN Legend: XX...X Y YY WW NNN e3 * Example 2085 -JYQS 8626 Product code or customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. ●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle mark). Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. Package may or may not include the corporate logo. Underbar (_) and/or Overbar (‾) symbol may not be to scale.  2019 Microchip Technology Inc. DS20006094A-page 29 MIC2085 16-Lead QSOP Package Outline & Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging. DS20006094A-page 30  2019 Microchip Technology Inc. MIC2085 APPENDIX A: REVISION HISTORY Revision A (June 2019) • Converted Micrel document MIC2085 to Microchip data sheet template DS20006094A. • Minor grammatical text changes throughout. • All reference to and information about the MIC2086 has been removed.  2019 Microchip Technology Inc. DS20006094A-page 31 MIC2085 NOTES: DS20006094A-page 32  2019 Microchip Technology Inc. MIC2085 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. Examples: Device -X X XX -XX Part No. Feature Junction Temp. Range Package Media Type Device: MIC2085: Single-Channel Low Voltage Hot Swap Controller Feature: Fast Circuit Breaker Threshold J = 95mV K = 150mV* L = 200mV* M = Off Junction Temperature Range: Y Package: QS = Media Type: = 98/Tube TR = 2,500/Reel = a) MIC2085-JYQS: MIC2085, 95mV Fast Circuit Breaker Threshold, –40°C to +85°C Temperature Range, 16-Lead QSOP, 98/Tube b) MIC2085-KYQS: MIC2085, 150mV* Fast Circuit Breaker Threshold, –40°C to +85°C Temperature Range, 16-Lead QSOP, 98/Tube c) MIC2085-LYQS-TR: MIC2085, 200mV* Fast Circuit Breaker Threshold, –40°C to +85°C Temperature Range, 16-Lead QSOP, 2,500/Reel d) MIC2085-MYQS-TR: MIC2085, Fast Circuit Breaker Threshold OFF, –40°C to +85°C Temperature Range, 16-Lead QSOP, 2,500/Reel –40°C to +85°C, RoHS-Compliant 16-Lead QSOP Note 1: Tape and Reel identifier only appears in the catalog part number description. This identifier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option. * Contact factory for availabilty.  2019 Microchip Technology Inc. DS20006094A-page 33 MIC2085 NOTES: DS20006094A-page 34  2019 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, Adaptec, AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, chipKIT, chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer, PackeTime, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon, TempTrackr, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. APT, ClockWorks, The Embedded Control Solutions Company, EtherSynch, FlashTec, Hyper Speed Control, HyperLight Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3, Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet-Wire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub, TimePictra, TimeProvider, Vite, WinPath, and ZL are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BlueSky, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, INICnet, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. The Adaptec logo, Frequency on Demand, Silicon Storage Technology, and Symmcom are registered trademarks of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2019, Microchip Technology Incorporated, All Rights Reserved. For information regarding Microchip’s Quality Management Systems, please visit www.microchip.com/quality.  2019 Microchip Technology Inc. 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