MIC4427CM

MIC4426/7/8 Dual 1.5A-Peak Low-Side MOSFET Drivers Features General Description • • • • • The MIC4426/4427/4428 family are highly reliable dual low-side MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These drivers translate TTL or CMOS input logic levels to output voltage levels that swing within 25 mV of the positive supply or ground. Comparable bipolar devices are capable of swinging only to within 1V of the supply. The MIC4426/7/8 is available in three configurations: dual inverting, dual non-inverting, and one inverting plus one non-inverting output. • • • • • • • • • • • Bipolar/CMOS/DMOS Construction Latch-Up Protected to >500 mA Reverse Current 1.5A-Peak Output Current 4.5V to 18V Operating Range Low Quiescent Supply Current - 4 mA at Logic 1 Input - 400 μA at Logic 0 Input Switches 1000 pF in 25 ns Matched Rise and Fall Times 7Ω Output Impedance 500 — — mA — 18 30 — 20 40 — 15 20 — 29 40 — 17 30 — 19 40 — 23 50 — 27 60 Output Withstand Reverse Current Switching Time Rise Time tr Fall Time tf Delay Time tD1 Delay Time tD2 Note 1: ns ns ns ns Test Figure 1-1 — Test Figure 1-1 — Test Figure 1-1 — Test Figure 1-1 — Specification for packaged product only.  2019 Microchip Technology Inc. DS20006202A-page 3 MIC4426/7/8 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: 4.5V ≤ VS ≤ 18V; TA = +25°C, bold values valid for full specified temperature range; unless noted. Note 1 Parameter Pulse Width Sym. Min. Typ. Max. Units tPW 400 — — ns 0.6 1.4 4.5 — 1.5 8 — 0.18 0.4 — 0.19 0.6 Conditions Test Figure 1-1 Power Supply Power Supply Current IS Power Supply Current IS Note 1: mA mA VINA = VINB = 3.0V — VINA = VINB = 0V — Specification for packaged product only. TEMPERATURE SPECIFICATIONS Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Maximum Junction Temperature TJ — — +150 °C — Storage Temperature Range TS –65 — +150 °C — Lead Temperature — — — +300 °C 10 sec. Junction Operating Temperature Range TJ 0 — +70 °C Z option Junction Operating Temperature Range TJ –40 — +85 °C Y option Thermal Resistance, PDIP 8-Ld JA — 130 — °C/W — Thermal Resistance, PDIP 8-Ld JC — 42 — °C/W — Thermal Resistance, SOIC 8-Ld JA — 120 — °C/W — Thermal Resistance, SOIC 8-Ld JC — 75 — °C/W — Thermal Resistance, MSOP 8-Ld JA — 250 — °C/W — Package Thermal Resistances Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability. DS20006202A-page 4  2019 Microchip Technology Inc. MIC4426/7/8 Test Circuits VS = 18V 0.1μF 6 INA 2 7 A 4 OUTA 1000pF MIC4426 INB 4.7μF 5 B OUTB 1000pF INPUT 5V 90% 2.5V 10% 0V VS 90% tD1 tP W tF tD2 tR OUTPUT 10% 0V FIGURE 1-1: Inverting Driver Switching Time. VS = 18V 0.1μF 6 INA 2 7 A 4 OUTA 1000pF MIC4427 INB 5 B 4.7μF OUTB 1000pF INPUT 5V 90% 2.5V 10% 0V VS 90% tD1 tP W tR tD2 tF OUTPUT 10% 0V FIGURE 1-2: Non-Inverting Driver Switching Time.  2019 Microchip Technology Inc. DS20006202A-page 5 MIC4426/7/8 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 35 70 CL = 1000pF TA = 25°C 50 25 40 20 30 tR 20 tF 10 5 10 15 SUPPLY VOLTAGE (V) FIGURE 2-1: Supply Voltage. 20 Rise and Fall Time vs. 35 10 t D2 20 t D1 15 10 5 0 5 10 15 SUPPLY VOLTAGE (V) FIGURE 2-2: Voltage. FIGURE 2-4: Temperature. SUPPLY CURRENT (mA) 25 -75 -50 -25 0 25 50 75 100 125 150 TEMPERATURE (°C) Delay Time vs. 80 CL = 1000pF TA = 25°C 30 TIME (ns) t D1 15 0 0 Delay Time vs. Supply T A = 25°C VS = 18V 70 400kHz 60 50 40 30 200 kHz 20kHz 20 10 0 20 10 100 1000 10000 CAPACITIVE LOAD (pF) FIGURE 2-5: Capacitive Load. Supply Current vs. 1k 40 CL = 1000pF VS = 18V 30 T A = 25°C VS = 18V tR 20 tR 100 tF TIME (ns) TIME (ns) t D2 5 0 0 CL = 1000pF VS = 18V 30 TIME (ns) TIME (ns) 60 tF 10 10 -75 -50 -25 0 25 50 75 100 125 150 1 10 TEMPERATURE (°C) FIGURE 2-3: Temperature. DS20006202A-page 6 Rise and Fall Time vs. FIGURE 2-6: Capacitive Load. 100 1000 10000 CAPACITIVE LOAD (pF) Rise and Fall Time vs.  2019 Microchip Technology Inc. MIC4426/7/8 2.5 VS = 18V TA = 25°C CL = 1000pF SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 30 20 10V 10 5V 2.0 1.5 1.0 0.5 0 0 1 FIGURE 2-7: Frequency. 10 100 FREQUENCY (kHz) 0 1000 5 Supply Current vs. 20 FIGURE 2-10: Quiescent Power Supply Current vs. Supply Voltage. 0.72 10V 0.48 15V 0.24 SUPPLY CURRENT (A) VC = 5V 0.96 300 200 150 NO LOAD BOTH INPUTS LOGIC "0" TA = 25°C 100 0 50 0 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 SUPPLY VOLTAGE (V) CURRENT SOURCED (mA) High Output vs. Current. 20 FIGURE 2-11: Quiescent Power Supply Current vs. Supply Voltage. 1.20 VS = 5V 0.96 0.72 10V 0.48 15V 0.24 0 MAXIMUM PACKAGE POWER DISSIP TION (mW) 1250 TA = 25°C OUTPUT VOL AGE (V) 15 400 TA = 25°C FIGURE 2-8: 10 SUPPLY VOLTAGE (V) 1.20 | VS – VOUT | (V) NO LOAD BOTH INPUTS LOGIC "1" TA = 25°C 1000 500 FIGURE 2-9: Low Output vs. Current.  2019 Microchip Technology Inc. PDIP 250 0 0 10 20 30 40 50 60 70 80 90 100 CURRENT SUNK (mA) SOIC 750 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) FIGURE 2-12: Package Power Dissipation. DS20006202A-page 7 MIC4426/7/8 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin Number PIN FUNCTION TABLE Pin Name Description 1, 8 NC Not internally connected. 2 INA Control Input A: TTL/CMOS compatible logic input. 3 GND Ground. 4 INB Control Input B: TTL/CMOS compatible logic input. 5 OUTB 6 VS 7 OUTA DS20006202A-page 8 Output B: CMOS totem-pole output. Supply Input: +4.5V to +18V. Output A: CMOS totem-pole output.  2019 Microchip Technology Inc. MIC4426/7/8 4.0 APPLICATION INFORMATION 4.5 4.1 Supply Bypassing Power dissipation caused by continuous load current (when driving a resistive load) through the driver’s output resistance is: Large currents are required to charge and discharge large capacitive loads quickly. For example, changing a 1000 pF load by 16V in 25 ns requires 0.8A from the supply input. To guarantee low supply impedance over a wide frequency range, parallel capacitors are recommended for power supply bypassing. Low-inductance ceramic MLC capacitors with short lead lengths (< 0.5”) should be used. A 1.0 μF film capacitor in parallel with one or two 0.1 μF ceramic MLC capacitors normally provides adequate bypassing. 4.2 Grounding When using the inverting drivers in the MIC4426 or MIC4428, individual ground returns for the input and output circuits or a ground plane are recommended for optimum switching speed. The voltage drop that occurs between the driver’s ground and the input signal ground, during normal high-current switching, will behave as negative feedback and degrade switching speed. 4.3 Control Input Unused driver inputs must be connected to logic high (which can be VS) or ground. For the lowest quiescent current (