QT110A-ISG
lQ
NOT RECOMMENDED FOR NEW DESIGNS
Less expensive than many mechanical switches
Projects a ‘touch button’ through any dielectric
100% autocal for life - no adjustments required
No active external components
Piezo sounder direct drive for ‘tactile’ click feedback
LED drive for visual feedback
2 ~ 5V single supply operation
10µ
µA at 2.5V - very low power drain
Toggle mode for on/off control (via option pins)
10s or 60s auto-recalibration timeout (via option pins)
Pulse output mode (via option pins)
Gain settings in 3 discrete levels
Simple 2-wire operation possible
HeartBeat™ health indicator on output
Pb-Free packages
Vdd
1
Out
2
Opt1
3
Opt2
4
QT110A
8
Vss
7
Sns2
6
Sns1
5
Gain
The QT110A is a Flash version of the QT110. The QT110A is form, fit and function
compatible with the older device, except that the QT110A is more sensitive than the
older device, necessitating a significant reduction in Cs capacitance.
See Section 1 on page 2 for differences.
This device is intended as a replacement for the QT110,
and is not recommended for new designs.
For further device migration plans please
consult your local Atmel or Quantum representative.
lq
©1999-2008 Quantum Research Group
QT110A_1R0.01_0408
Figure 1-1 Standard mode options
1 - OVERVIEW
The QT110A is intended to replace the QT110 as a lower cost
alternative. This device functions identically to the QT110,
except that it is more sensitive. To compensate for the
sensitivity increase, it is required to do either of these two
things:
+2 ~~+5
+2.5
+5
1
1. Increase the Cx loading to ground on SNS2 by 10pF
2. Decrease the Cs value
2
Option 1 is very simple and guarantees that the sensitivity of
the QT110A is identical to the older device. Option 2 requires
some trial and error to test the sensitivity of the touch pad or
prox field, so that it is about the same as before. Cs changes
ranging from 10 to 60% may be required depending on the
circuit layout and electrode design.
3
4
OUTPUT = DC
TIMEOUT = 10 Secs
TOGGLE = OFF
GAIN = HIGH
The QT110A employs low duty cycle bursts of charge-transfer
cycles to acquire its signal. Burst mode permits power
consumption in the low microamp range, dramatically reduces
EMC problems, and yet permits excellent response time.
Internally the signals are digitally processed to reject impulse
noise, using a 'consensus' filter which requires four
consecutive confirmations of a detection before the output is
activated.
OPT2
SNS1
Vss
Rs
Cx
6
2nF - 500nF
8
In order to reduce power consumption and to assist in
discharging Cs between acquisition bursts, a 470K series
resistor Rs should be connected across Cs (Figure 1-1).
The rule Cs >> Cx must be observed for proper operation.
Normally Cx is on the order of 10pF or so, while Cs might be
10nF (10,000pF), or a ratio of about 1:1000.
It is important to minimize the amount of unnecessary stray
capacitance Cx, for example by minimizing trace lengths and
widths and backing off adjacent ground traces and planes so
as keep gain high for a given value of Cs, and to allow for a
larger sensing electrode size if so desired.
The IC is highly tolerant of changes in Cs since it computes the
signal threshold level ratiometrically. Cs is thus non-critical and
can be an X7R type. As Cs changes with temperature, the
internal drift compensation mechanism also adjusts for the drift
automatically.
The PCB traces, wiring, and any components associated with
or in contact with SNS1 and SNS2 will become touch sensitive
and should be treated with caution to limit the touch area to the
desired location.
Piezo sounder drive: The QT110A can drive a piezo sounder
after a detection for feedback. The piezo sounder replaces or
augments the Cs capacitor; this works since piezo sounders
are also capacitors, albeit with a large thermal drift coefficient.
If Cpiezo is in the proper range, no additional capacitor is
required. If Cpiezo is too small, it can simply be ‘topped up’ with a
ceramic capacitor in parallel. The QT110A drives a ~4kHz
signal across SNS1 and SNS2 to make the piezo (if installed)
sound a short tone for 75ms immediately after detection, to act
as an audible confirmation.
Twisted
pair
5
The internal ADC treats Cs as a floating transfer capacitor; as a
direct result, the sense electrode can in theory be connected to
either SNS1 or SNS2 with no performance difference.
However, the noise immunity of the device is improved by
connecting the electrode to SNS2, preferably via a series
resistor Re (Figure 1-1) to roll off higher harmonic frequencies,
both outbound and inbound.
Larger values of Cx cause the charge transferred into Cs to
rise more rapidly, reducing available resolution; as a minimum
resolution is required for proper operation, this can result in
dramatically reduced apparent gain.
1K
GAIN
SENSING
ELECTRODE
1.2 ELECTRODE DRIVE
The QT switches and charge measurement hardware functions
are all internal to the QT110A (Figure 1-3). A single-slope
switched capacitor ADC includes both the required QT charge
and transfer switches in a configuration that provides direct
ADC conversion. Vdd is used as the charge reference voltage.
CMOS
LOGIC
OPT1
RE
7
Option pins allow the selection or alteration of several other
special features and sensitivity.
1.1 BASIC OPERATION
3.5 - 5.5V
SNS2
Cs
All other aspects of this datasheet are identical to the QT110
datasheet except for this section, the specification changes on
pages 8 and 9, and the part marking.
Figure
Vdd
OUT
1.3 ELECTRODE DESIGN
1.3.1 ELECTRODE GEOMETRY AND SIZE
There is no restriction on the shape of the electrode; in most
cases common sense and a little experimentation can result in
a good electrode design. The QT110A will operate equally well
with long, thin electrodes as with round
or square ones; even random shapes
are acceptable. The electrode can also
1-2 2-wire operation, self-powered
be a 3-dimensional surface or object.
+
Sensitivity is related to electrode surface
area, orientation with respect to the
10µF
1N4148
object being sensed, object
1
Vdd
RE
composition, and the ground coupling
2 OUT SNS2 7
SENSING
ELECTRODE
quality of both the sensor circuit and the
sensed object.
n-ch Mosfet
Cs
3 OPT1 GAIN 5
1.3.2 KIRCHOFF’S CURRENT LAW
Rs
Cx
Like all capacitance sensors, the
4 OPT2 SNS1 6
QT110A relies on Kirchoff’s Current Law
(Figure 1-5) to detect the change in
Vss
capacitance of the electrode. This law
8
as applied to capacitive sensing
LQ
2
QT110A_1R0.01_0408
Bu rst C ontroller
Single -Slo pe 14-bit
Switched Cap acito r AD C
requires that the sensor’s field current
Figure 1-3 Internal Switching & Timing
must complete a loop, returning back to
E LEC TRO DE
its source in order for capacitance to be
Result
sensed. Although most designers relate
S NS2
to Kirchoff’s law with regard to hardwired
circuits, it applies equally to capacitive
field flows. By implication it requires that
the signal ground and the target object
must both be coupled together in some
Cs
manner for a capacitive sensor to
Start
operate properly. Note that there is no
Cx
Do ne
need to provide actual hardwired ground
connections; capacitive coupling to
S NS1
ground (Cx1) is always sufficient, even if
the coupling might seem very tenuous.
For example, powering the sensor via an
isolated transformer will provide ample
ground coupling, since there is
C harg e
Amp
capacitance between the windings
and/or the transformer core, and from
the power wiring itself directly to 'local
earth'. Even when battery powered, just
the physical size of the PCB and the
The Gain input should never be tied to anything other than
object into which the electronics is embedded will generally be
SNS1 or SNS2, or left unconnected (for high gain setting).
enough to couple a few picofarads back to local earth.
In some cases it may be desirable to increase sensitivity
1.3.3 VIRTUAL CAPACITIVE GROUNDS
further, for example when using the sensor with very thick
When detecting human contact (e.g. a fingertip), grounding of
panels having a low dielectric constant.
the person is never required. The human body naturally has
Sensitivity can often be increased by using a bigger electrode,
several hundred picofarads of ‘free space’ capacitance to the
reducing panel thickness, or altering panel composition to one
local environment (Cx3 in Figure 1-3), which is more than two
having a higher dielectric constant. Increasing electrode size
orders of magnitude greater than that required to create a
can have diminishing returns, as high values of Cx will reduce
return path to the QT110A via earth. The QT110A's PCB
sensor gain.
however can be physically quite small, so there may be little
‘free space’ coupling (Cx1 in Figure 1-3) between it and the
Increasing the electrode's surface area will not substantially
environment to complete the return path. If the QT110A circuit
increase touch sensitivity if its diameter is already much larger
ground cannot be earth grounded by wire, for example via the
in surface area than the object being detected. Metal areas
supply connections, then a ‘virtual capacitive ground’ may be
near the electrode will reduce the field strength and increase
required to increase return coupling.
Cx loading and are to be avoided for maximal gain.
A ‘virtual capacitive ground’ can be created by connecting the
QT110A’s own circuit ground to:
Ground planes around and under the electrode and its SNS
trace will cause high Cx loading and destroy gain. The possible
signal-to-noise ratio benefits of ground area are more than
negated by the decreased gain from the circuit, and so ground
areas around electrodes are discouraged. Keep ground,
power, and other signals traces away from the electrodes and
SNS wiring.
- A nearby piece of metal or metallized housing;
- A floating conductive ground plane;
- Another electronic device (to which its might be connected
already).
Free-floating ground planes such as metal foils should
maximize exposed surface area in a flat plane if possible. A
square of metal foil will have little effect if it is rolled up or
crumpled into a ball. Virtual ground planes are more effective
and can be made smaller if they are physically bonded to other
surfaces, for example a wall or floor.
The value of Cs has a minimal effect on sensitivity with these
devices, but if the Cs value is too low there can be a sharp
drop-off in sensitivity.
Figure 1-5 Kirchoff's Current Law
1.3.4 SENSITIVITY
The QT110A can be set for one of 3 gain levels using option
pin 5 (Table 1-1). If left open, the gain setting is high. The
sensitivity change is made by altering the numerical threshold
level required for a detection. It is also a function of other
things: electrode size, shape, and orientation, the composition
and aspect of the object to be sensed, the thickness and
composition of any overlaying panel material, and the degree
of ground coupling of both sensor and object are all influences.
CX2
Se nse E le ctro de
Gain plots of the device are shown on page 9.
SENSO R
Table 1-1 Gain Strap Options
Gain
High
Medium
Low
LQ
CX1
Tie Pin 5 to:
Leave open
Pin 6
Pin 7
Su rro und ing e nv iro nm en t
3
C X3
QT110A_1R0.01_0408
2.1.4 DETECTION INTEGRATOR
2 - QT110A SPECIFICS
It is desirable to suppress detections generated by electrical
noise or from quick brushes with an object. To accomplish this,
the QT110A incorporates a detect integration counter that
increments with each detection until a limit is reached, after
which the output is activated. If no detection is sensed prior to
the final count, the counter is reset immediately to zero. In the
QT110A, the required count is 4.
2.1 SIGNAL PROCESSING
The QT110A processes all signals using a number of
algorithms pioneered by Quantum. The algorithms are
specifically designed to provide for high 'survivability' in the
face of all kinds of adverse environmental changes.
2.1.1 DRIFT COMPENSATION ALGORITHM
The Detection Integrator can also be viewed as a 'consensus'
filter, that requires four detections in four successive bursts to
create an output. As the basic burst spacing is 75ms, if this
spacing was maintained throughout all 4 counts the sensor
would react very slowly. In the QT110A, after an initial
detection is sensed, the remaining three bursts are spaced
about 20ms apart, so that the slowest reaction time possible is
75+20+20+20 or 135ms and the fastest possible is 60ms,
depending on where in the initial burst interval the contact first
occurred. The response time will thus average about 95ms.
Signal drift can occur because of changes in Cx and Cs over
time. It is crucial that drift be compensated for, otherwise false
detections, non-detections, and sensitivity shifts will follow. Cs
drift has almost no effect on gain since the threshold method
used is ratiometric. However Cs drift can still cause false
detections if the drift occurs rapidly.
Drift compensation (Figure 2-1) is performed by making the
reference level track the raw signal at a slow rate, but only
while there is no detection in effect. The rate of adjustment
must be performed slowly, otherwise legitimate detections
could be ignored. The QT110A drift compensates using a
slew-rate limited change to the reference level; the threshold
and hysteresis values are slaved to this reference.
2.1.5 FORCED SENSOR RECALIBRATION
The QT110A has no recalibration pin; a forced recalibration is
accomplished only when the device is powered up. However,
the supply drain is so low it is a simple matter to treat the entire
IC as a controllable load; simply driving the QT110A's Vdd pin
directly from another logic gate or a microprocessor port
(Figure 2-2) will serve as both power and 'forced recal'. The
source resistance of most CMOS gates and microprocessors is
low enough to provide direct power without any problems.
Almost any CMOS logic gate can directly power the QT110A.
Once an object is sensed, the drift compensation mechanism
ceases since the signal is legitimately high, and therefore
should not cause the reference level to change.
The QT110A's drift compensation is 'asymmetric': the reference
level drift-compensates in one direction faster than it does in
the other. Specifically, it compensates faster for decreasing
signals than for increasing signals. Increasing signals should
not be compensated for quickly, since an approaching finger
could be compensated for partially or entirely before even
touching the sense pad. However, an obstruction over the
sense pad, for which the sensor has already made full
allowance for, could suddenly be removed leaving the sensor
with an artificially elevated reference level and thus become
insensitive to touch. In this latter case, the sensor will
compensate for the object's removal very quickly, usually in
only a few seconds.
A 0.01uF minimum bypass capacitor close to the device is
essential; without it the device can break into high frequency
oscillation.
Option strap configurations are read by the QT110A only on
powerup. Configurations can only be changed by powering the
QT110A down and back up again; again, a microcontroller can
directly alter most of the configurations and cycle power to put
them in effect.
2.2 OUTPUT FEATURES
2.1.2 THRESHOLD CALCULATION
The devices are designed for maximum flexibility and can
accommodate most popular sensing requirements. These are
selectable using strap options on pins OPT1 and OPT2. All
options are shown in Table 2-1.
Sensitivity is dependent on the threshold level as well as ADC
gain; threshold in turn is based on the internal signal reference
level plus a small differential value. The threshold value is
established as a percentage of the absolute signal level. Thus,
sensitivity remains constant even if Cs is altered dramatically,
so long as electrode coupling to the user remains constant.
Furthermore, as Cx and Cs drift, the threshold level is
automatically recomputed in real time so that it is never in error.
OPT1 and OPT2 should never be left floating. If they are
floated, the device will draw excess power and the options will
not be properly read on powerup. Intentionally, there are no
pullup resistors on these lines, since pullup resistors add to
power drain if the pin(s) are tied low.
The QT110A employs a hysteresis dropout below the threshold
level of 50% of the delta between the reference and threshold
levels.
2.2.1 DC MODE OUTPUT
The output of the device can respond in a DC mode, where the
output is active-low upon detection. The output will remain
active for the duration of the detection, or until the Max
The threshold setting is determined by option jumper; see
Section 1.3.4.
2.1.3 MAX ON-DURATION
If an object or material obstructs the sense pad the
signal may rise enough to create a detection,
preventing further operation. To prevent this, the
sensor includes a timer which monitors detections.
If a detection exceeds the timer setting, the timer
causes the sensor to perform a full recalibration.
This is known as the Max On-Duration feature.
After the Max On-Duration interval, the sensor will
once again function normally, even if partially or
fully obstructed, to the best of its ability given
electrode conditions. There are two nominal
timeout durations available via strap option: 10 and
60 seconds. The accuracy of these timeouts is
approximate.
LQ
Figure 2-1 Drift Compensation
Signal
H ysteresis
Threshold
R eference
Output
4
QT110A_1R0.01_0408
Figure 2-2 Powering From a CMOS Port Pin
Figure 2-3 Damping Piezo Clicks with Rs
+2 ~~ +5
+2.5
+5
P O RT X .m
0.01µF
1
2
Vdd
OUT
SNS1
OPT1
GAIN
V dd
P O RT X .n
O UT
3
QT110A
Q T110
4
V ss
OPT2
SNS2
RE
7
5
Piezo Sounder
10-30nF
C MO S
m icro controller
SENSING
ELECTRODE
Rs
Cx
6
Vss
8
Piezo sounders have very high, uncharacterized thermal
coefficients and should not be used if fast temperature swings
are anticipated, especially at high gains. They are also
generally unstable at high gains; even if the total value of Cs is
largely from an added capacitor the piezo can cause periodic
false detections.
On-Duration expires, whichever occurs first. If the latter occurs
first, the sensor performs a full recalibration and the output
becomes inactive until the next detection.
In this mode, two Max On-Duration timeouts are available: 10
and 60 seconds.
2.2.2 TOGGLE MODE OUTPUT
The burst acquisition process induces a small but audible
voltage step across the piezo resonator, which occurs when
SNS1 and SNS2 rapidly discharge residual voltage stored on
the resonator. The resulting slight clicking sound can be greatly
reduced by placing a 470K resistor Rs in parallel with the
resonator; this acts to slowly discharge the resonator,
attenuating of the harmonic-rich audible step (Figure 2-3).
This makes the sensor respond in an on/off mode like a flip
flop. It is most useful for controlling power loads, for example in
kitchen appliances, power tools, light switches, etc.
Max On-Duration in Toggle mode is fixed at 10 seconds. When
a timeout occurs, the sensor recalibrates but leaves the output
state unchanged.
Note that the piezo drive does not operate in Pulse mode.
2.2.5 HEARTBEAT™ OUTPUT
Table 2-1 Output Mode Strap Options
Tie
Pin 3 to:
Tie
Pin 4 to:
Max OnDuration
DC Out
Vdd
Vdd
10s
DC Out
Vdd
Gnd
60s
Toggle
Gnd
Gnd
10s
Pulse
Gnd
Vdd
10s
The output has a full-time HeartBeat™ ‘health’ indicator
superimposed on it. This operates by taking 'Out' into a 3-state
mode for 350µs once before every QT burst. This output state
can be used to determine that the sensor is operating properly,
or, it can be ignored using one of several simple methods.
The HeartBeat indicator can be sampled by using a pulldown
resistor on Out, and feeding the resulting negative-going pulse
into a counter, flip flop, one-shot, or other circuit. Since Out is
normally high, a pulldown resistor will create negative
HeartBeat pulses (Figure 2-4) when the sensor is not detecting
an object; when detecting an object, the output will remain
active for the duration of the detection, and no HeartBeat pulse
will be evident.
2.2.3 PULSE MODE OUTPUT
This mode generates a negative pulse of 75ms duration with
every new detection. It is most useful for 2-wire operation, but
can also be used when bussing together several devices onto
a common output line with the help of steering diodes or logic
gates, in order to control a common load from several places.
If the sensor is wired to a microcontroller as shown in Figure
2-5, the controller can reconfigure the load resistor to either
ground or Vcc depending on the output state of the device, so
that the pulses are evident in either state.
Max On-Duration is fixed at 10 seconds if in Pulse output
mode.
Electromechanical devices will usually ignore this short pulse.
The pulse also has too low a duty cycle to visibly activate
LED’s. It can be filtered completely if desired, by adding an RC
timeconstant to filter the output, or if interfacing directly and
only to a high-impedance CMOS input, by doing nothing or at
most adding a small non-critical capacitor from Out to ground
(Figure 2-6).
Note that the beeper drive does not operate in Pulse mode.
2.2.4 PIEZO ACOUSTIC DRIVE
A piezo drive signal is generated for use with a piezo sounder
immediately after a detection is made; the tone lasts for a
nominal 95ms to create a ‘tactile feedback’ sound.
The sensor drives the piezo using an H-bridge configuration for
the highest possible sound level. The piezo is connected
across pins SNS1 and SNS2 in place of Cs or in addition to a
parallel Cs capacitor. The piezo sounder should be selected to
have a peak acoustic output in the 3.5kHz to 4.5kHz region.
2.2.6 OUTPUT DRIVE
The QT110A’s output is active low ; it can source 1mA or sink
5mA of non-inductive current.
Care should be taken when the IC and the load are both
powered from the same supply, and the supply is minimally
regulated. The device derives its internal references from the
power supply, and sensitivity shifts can occur with changes in
Vdd, as happens when loads are switched on. This can induce
detection ‘cycling’, whereby an object is detected, the load is
turned on, the supply sags, the detection is no longer sensed,
Since piezo sounders are merely high-K ceramic capacitors,
the sounder will double as the Cs capacitor, and the piezo's
metal disc can even act as the sensing electrode. Piezo
transducer capacitances typically range from 6nF to 30nF in
value; at the lower end of this range an additional capacitor
should be added to bring the total Cs across SNS1 and SNS2
to at least 10nF, or possibly more if Cx is above 5pF
LQ
5
QT110A_1R0.01_0408
Figure 2-4
Figure 2-5
Getting HB pulses with a pull-down resistor
Using a micro to obtain HB pulses in either output state
+2.5~ to
+55
+2
H eartBeat™ P ulses
1
2
Vdd
O UT
S NS 2
O PT1
GAIN
O PT2
S NS 1
2
P O RT_M.x
7
OU T
SN S 2
OPT1
GA IN
OPT2
SN S 1
7
Ro
Ro
3
4
5
3
M icroprocessor
6
P O RT_M.y
4
5
6
Vss
8
the load is turned off, the supply rises and the object is
reacquired, ad infinitum. To prevent this occurrence, the output
should only be lightly loaded if the device is operated from an
unregulated supply, e.g. batteries. Detection ‘stiction’, the
opposite effect, can occur if a load is shed when Out is active.
to reduce stray loading (which will dramatically reduce
sensitivity).
2. Keep Cs, Rs, and Re very close to the IC.
3. Make Re as large as possible. As a test, check to be sure
that an increase of Re by 50% does not appreciably
decrease sensitivity; if it does, reduce Re until the 50%
test increase has a negligible effect on sensitivity.
The output of the QT110A can directly drive a resistively limited
LED. The LED should be connected with its cathode to the
output and its anode towards Vcc, so that it lights when the
sensor is active-low. If desired the LED can be connected from
Out to ground, and driven on when the sensor is inactive, but
only with less drive current (1mA).
4. Do not route the sense wire near other ‘live’ traces
containing repetitive switching signals; the sense trace will
pick up noise from them.
3 - CIRCUIT GUIDELINES
3.3 POWER SUPPLY, PCB LAYOUT
3.1 SAMPLE CAPACITOR
The power supply can range from 2 to 5.0 volts. At 2.5 volts
current drain averages less than 10µA with Cs = 10nF,
provided a 470K Rs resistor is used (Figure 2-6). Idd curves
are shown in Figure 4-4.
See also Section 3.4.
When used for most applications, the charge sampler Cs can
be virtually any plastic film or good quality ceramic capacitor.
The type should be relatively stable in the anticipated
temperature range. If fast temperature swings are expected,
especially at higher sensitivity, a more stable capacitor might
be required for example PPS film.
Higher values of Cs will raise current drain. Higher Cx values
can actually decrease power drain. Operation can be from
batteries, but be cautious about loads causing supply droop
(see Output Drive, Section 2.2.6) if the batteries are
unregulated.
In most moderate applications a low-cost X7R type will work
fine.
As battery voltage sags with use or fluctuates slowly with
temperature, the IC will track and compensate for these
changes automatically with only minor changes in sensitivity.
3.2 ELECTRODE WIRING
See also Section 3.4.
The wiring of the electrode and its connecting trace is important
to achieving high signal levels and low noise. Certain design
rules should be adhered to for best results:
If the power supply is shared with another electronic system,
care should be taken to assure that the supply is free of digital
spikes, sags, and surges which can adversely affect the
device. The IC will track slow changes in Vdd, but it can be
affected by rapid voltage steps.
1. Use a ground plane under the IC itself and Cs and Rs but
NOT under Re, or under or closely around the electrode or
its connecting trace. Keep ground away from these things
if desired, the supply can be regulated using a conventional
low current regulator, for example CMOS LDO regulators that
have nanoamp quiescent currents. Care should be taken that
the regulator does not have a minimum load specification,
which almost certainly will be violated by the QT110A's low
current requirement. Furthermore, some LDO regulators are
unable to provide adequate transient regulation between the
quiescent and acquire states, creating Vdd disturbances that
will interfere with the acquisition process. This can usually be
solved by adding a small extra load from Vdd to ground, such
as 10K ohms, to provide a minimum load on the regulator.
Figure 2-6 Eliminating HB Pulses
G ATE OR
MIC RO INP U T
2
CMO S
O UT
SN S 2
O PT1
GA IN
7
Co
100pF
3
4
O PT2
SN S 1
5
Conventional non-LDO type regulators are usually more stable
than slow, low power CMOS LDO types. Consult the regulator
manufacturer for recommendations.
6
For proper operation a 100nF (0.1uF) ceramic bypass
capacitor must be used between Vdd and Vss; the bypass cap
LQ
6
QT110A_1R0.01_0408
should be placed very close to the device’s power pins.
Without this capacitor the part can break into high frequency
oscillation, get physically hot, stop working, or become
damaged.
extremely large amounts of nonlinear parasitic capacitance
which will swamp the capacitance of the electrode and cause
false detections and other forms of instability. Diodes also act
as RF detectors and will cause serious RF immunity problems.
PCB Cleanliness: All capacitive sensors should be treated as
highly sensitive circuits which can be influenced by stray
conductive leakage paths. QT devices have a basic resolution
in the femtofarad range; in this region, there is no such thing as
‘no clean flux’. Flux absorbs moisture and becomes conductive
between solder joints, causing signal drift and resultant false
detections or temporary loss of sensitivity. Conformal coatings
will trap in existing amounts of moisture which will then become
highly temperature sensitive.
3.4 EMC AND RELATED NOISE ISSUES
External AC fields (EMI) due to RF transmitters or electrical
noise sources can cause false detections or unexplained shifts
in sensitivity.
The influence of external fields on the sensor is reduced by
means of the Rseries described in Section 3.2. The Cs
capacitor and Rseries (Figure 1-1) form a natural low-pass
filter for incoming RF signals; the roll-off frequency of this
network is defined by -
The designer should strongly consider ultrasonic cleaning as
part of the manufacturing process, and in more extreme cases,
the use of conformal coatings after cleaning and baking.
FR =
3.3.1 SUPPLY CURRENT
If for example Cs = 22nF, and Rseries = 10K ohms, the rolloff
frequency to EMI is 723Hz, vastly lower than any credible
external noise source (except for mains frequencies i.e. 50 / 60
Hz). However, Rseries and Cs must both be placed very close
to the body of the IC so that the lead lengths between them
and the IC do not form an unfiltered antenna at very high
frequencies.
Measuring average power consumption is a challenging task
due to the burst nature of the device’s operation. Even a good
quality RMS DMM will have difficulty tracking the relatively slow
burst rate, and will show erratic readings.
The easiest way to measure Idd is to put a very large capacitor,
such as 2,700µF across the power pins, and put a 220 ohm
resistor from there back to the power source. Measure the
voltage across the 220 resistor with a DMM and compute the
current based on Ohm’s law. This circuit will average out
current to provide a much smoother reading.
PCB layout, grounding, and the structure of the input circuitry
have a great bearing on the success of a design to withstand
electromagnetic fields and be relatively noise-free.
These design rules should be adhered to for best ESD and
EMC results:
To reduce the current consumption the most, use high or low
gain pin settings only, the smallest value of Cs possible that
works, and a 470K resistor (Rs) across Cs (Figure 1-1). Rs
acts to help discharge capacitor Cs between bursts, and its
presence substantially reduces power consumption.
1. Use only SMT components.
2. Keep Cs, Rs, Re and Vdd bypass cap close to the IC.
3. Maximize Re to the limit where sensitivity is not affected.
3.3.2 ESD PROTECTION
4. Do not place the electrode or its connecting trace near
other traces, or near a ground plane.
In cases where the electrode is placed behind a dielectric
panel, the IC will be protected from direct static discharge.
However even with a panel transients can still flow into the
electrode via induction, or in extreme cases via dielectric
breakdown. Porous materials may allow a spark to tunnel right
through the material. Testing is required to reveal any
problems. The device has diode protection on its terminals
which will absorb and protect the device from most ESD
events; the usefulness of the internal clamping will depending
on the dielectric properties, panel thickness, and rise time of
the ESD transients.
5. Do use a ground plane under and around the QT110A
itself, back to the regulator and power connector (but not
beyond the Cs capacitor).
6. Do not place an electrode (or its wiring) of one QT11x
device near the electrode or wiring of another device, to
prevent cross interference.
7. Keep the electrode (and its wiring) away from other traces
carrying AC or switched signals.
8. If there are LEDs or LED wiring near the electrode or its
wiring (ie for backlighting of the key), bypass the LED
wiring to ground on both its ends.
The best method available to suppress ESD and RFI is to
insert a series resistor Re in series with the electrode as shown
in Figure 1-1. The value should be the largest that does not
affect sensing performance. If Re is too high, the gain of the
sensor will decrease.
9. Use a voltage regulator just for the QT110A to eliminate
noise coupling from other switching sources via Vdd.
Make sure the regulator’s transient load stability provides
for a stable voltage just before each burst commences.
Because the charge and transfer times of the QT110A are
relatively long (~2µs), the circuit can tolerate a large value of
Re, often more than 10k ohms in most cases.
For further tips on construction, PCB design, and EMC issues
browse the application notes and faq at www.qprox.com
Diodes or semiconductor transient protection devices or MOV's
on the electrode trace are not advised; these devices have
LQ
1
2R series C s
7
QT110A_1R0.01_0408
4.1 ABSOLUTE MAXIMUM SPECIFICATIONS
Operating temp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 - 85C
Storage temp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55OC to +125OC
VDD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +6.5V
Max continuous pin current, any control or drive pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20mA
Short circuit duration to ground, any pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . infinite
Short circuit duration to VDD, any pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . infinite
Voltage forced onto any pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6V to (Vdd + 0.6) Volts
4.2 RECOMMENDED OPERATING CONDITIONS
VDD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.0 to 5.5V
Supply ripple+noise. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mV p-p max
Max Cx load capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100pF
Cs value. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.7nF ~ 22nF X7R ceramic
Rs value. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470K 5%
4.3 AC SPECIFICATIONS
Vdd = 3.0, Cs = 10nF, Rs = 470K, Cx = 20pF, Ta = 20OC, unless otherwise noted.
Parameter
Description
TRC
Recalibration time
Min
Typ
Max
Units
550
ms
TQ
Charge, transfer duration
2
µs
TBS
Burst spacing interval
75
95
ms
ms
TBL
Burst length
TR
Response time
FP
Piezo drive frequency
0.5
7
ms
4.4
kHz
129
3.6
4
Notes
@ 5.0V Vdd
@ 3.3V Vdd
ms
TP
Piezo drive duration
75
ms
TPO
Pulse output width on Out
75
ms
THB
Heartbeat pulse width
300
µs
FQ
Burst frequency
165
kHz
4.4 SIGNAL PROCESSING
Vdd = 3.0, Cs = 10nF, Rs = 470K, Cx = 20pF, Ta = 20OC, unless otherwise noted.
Description
Min
Typ
Max
Units
Notes
Threshold differential, high gain
3.1
%
Note 1
Threshold differential, medium gain
4.7
%
Note 1
Threshold differential, low gain
6.25
%
Note 1
50
%
Note 2
4
samples
750
ms/level
Hysteresis
Consensus filter length
Positive drift compensation rate
Negative drift compensation rate
Post-detection recalibration timer duration
75
10
ms/level
60
secs
Note 3
Note 1: Of absolute full scale signal
Note 2: Of signal threshold
Note 3: Strap option.
LQ
8
QT110A_1R0.01_0408
4.5 DC SPECIFICATIONS
Vdd = 3.0, Cs = 10nF, Rs = 470K, Cx = 20pF, Gain = High, Ta = 20OC, unless otherwise noted.
Parameter
Description
Min
Typ
Max
Units
VDDL
IDD
Guaranteed min Vdd
2.45
Supply current
V
26
12
9.5
VDDS
Supply turn-on slope
VIL
Low input logic level
VHL
High input logic level
VOL
Low output voltage
VOH
High output voltage
Notes
100
0.8
2.2
0.6
Vdd-0.7
±1
µA
µA
µA
@5.0V
@3.3V
@2.5V
V/s
Required for proper startup
V
OPT1, OPT2
V
OPT1, OPT2
V
OUT, 4mA sink
V
OUT, 1mA source
µA
OPT1, OPT2
IIL
Input leakage current
AR
Acquisition resolution
8
bits
S[1]
Sensitivity - high gain
1.2
pF
Cx = 20pF, Cs = 15nF; Figure 4-1
S[2]
Sensitivity - medium gain
1.8
pF
Cx = 20pF, Cs = 15nF; Figure 4-2
S[3]
Sensitivity - low gain
3.8
pF
Cx = 20pF, Cs = 15nF; Figure 4-3
Figure 4-1 High Gain Sensitivity
and Range @ Vdd = 3V
Figure 4-2 Medium Gain Sensitivity
and Range @ Vdd = 3V
4.0
2.5
Cx=40pF
2.0
35pF
1.5
30pF
1.0
20pF
15pF
10pF
0.5
Cx=40pF
Sensitivity, pF
Sensitivity, pF
3.0
20
35pF
30pF
2.0
20pF
15pF
10pF
1.0
Valid Operating Range
10
3.0
Valid Operating Range
10
30
20
30
Cs, nF
Cs, nF
Figure 4-4 Typical Supply Current Vs Vdd
Rs = 470K, Cx = 20pF, Gain = High
Figure 4-3 Low Gain Sensitivity
and Range @ Vdd = 3V
40
35
Idd, Microamperes
8.0
Sensitivity, pF
Cx=40pF
6.0
35pF
30pF
4.0
2.0
20pF
15pF
10pF
30
Cs = 20nF
25
20
..
.
15
Cs = 10nF
10
Valid Operating Range
5
10
20
2.5
30
3.5
4
4.5
5
Vdd
Cs, nF
LQ
3
9
QT110A_1R0.01_0408
4.6 MECHANICAL
Package type: 8-pin SOIC
SYMBOL
Min
Millimeters
Max
M
W
Aa
H
h
D
L
E
e
ß
Ø
4.800
5.816
3.81
1.371
0.101
1.27
0.355
0.508
0.19
0.381
0º
4.979
6.198
3.988
1.728
0.762
1.27
0.483
1.016
0.249
0.762
8º
Notes
Min
Inches
Max
BSC
0.189
0.229
0.15
0.054
0.004
0.050
0.014
0.02
0.007
0.229
0º
0.196
0.244
0.157
0.068
0.01
0.05
0.019
0.04
0.01
0.03
8º
Notes
BSC
5 - ORDERING INFORMATION
PART
TEMP RANGE
PACKAGE
MARKING
QT110A-ISG
-40 - 85C
SOIC-8
Lead-Free
Microchip
markings
LQ
10
QT110A_1R0.01_0408
lQ
Copyright © 1999-2008 QRG Ltd. All rights reserved
Patented and patents pending
Corporate Headquarters
1 Mitchell Point
Ensign Way, Hamble SO31 4RF
Great Britain
Tel: +44 (0)23 8056 5600 Fax: +44 (0)23 8045 3939
www.qprox.com
This device covered under one or more of the following United States and international patents: 5,730,165, 6,288,707, 6,377,009, 6,452,514,
6,457,355, 6,466,036, 6,535,200. Numerous further patents are pending which may apply to this device or the applications thereof.
The specifications set out in this document are subject to change without notice. All products sold and services supplied by QRG are subject
to our Terms and Conditions of sale and supply of services which are available online at www.qprox.com and are supplied with every order
acknowledgement. QProx, QTouch, QMatrix, QLevel, and QSlide are trademarks of QRG. QRG products are not suitable for medical
(including lifesaving equipment), safety or mission critical applications or other similar purposes. Except as expressly set out in QRG's Terms
and Conditions, no licenses to patents or other intellectual property of QRG (express or implied) are granted by QRG in connection with the
sale of QRG products or provision of QRG services. QRG will not be liable for customer product design and customers are entirely
responsible for their products and applications which incorporate QRG's products.