2.4 GHz High-Power and High-Gain Power Amplifier
SST12LP15A
Data Sheet
The SST12LP15A is a high-power and high-gain power amplifier based on the
highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power
applications with superb power-added efficiency while operating over the 2.4-2.5
GHz frequency band, it typically provides 32 dB gain with 26% power-added efficiency @ POUT = 24 dBm for 802.11g and 27% power-added efficiency @ POUT =
25 dBm for 802.11b. The SST12LP15A has excellent linearity while meeting
802.11g spectrum mask at 25 dBm. The power amplifier IC features easy boardlevel usage along with high-speed power-up/down control and is offered in 16contact VQFN package
Features
• High Gain:
• High temperature stability
– Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C
• High linear output power:
• Low shut-down current (~1 µA)
– >29 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 25 dBm
– Added EVM~4% up to 23 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 25 dBm
• High power-added efficiency/Low operating current for both 802.11g/b applications
• On-chip power detection
• 25 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN (3mm x 3mm)
• All non-Pb (lead-free) devices are RoHS compliant
– ~26%/300 mA @ POUT = 24 dBm for 802.11g
– ~27%/350 mA @ POUT = 25 dBm for 802.11b
• Built-in Ultra-low IREF power-up/down control
– IREF ~2 mA
Applications
• WLAN (IEEE 802.11b/g/n)
• Low idle current
– ~80 mA ICQ
• Home RF
• High-speed power-up/down
– Turn on/off time (10%-90%)
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