SST12LP15A-QVCE

2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5 GHz frequency band, it typically provides 32 dB gain with 26% power-added efficiency @ POUT = 24 dBm for 802.11g and 27% power-added efficiency @ POUT = 25 dBm for 802.11b. The SST12LP15A has excellent linearity while meeting 802.11g spectrum mask at 25 dBm. The power amplifier IC features easy boardlevel usage along with high-speed power-up/down control and is offered in 16contact VQFN package Features • High Gain: • High temperature stability – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C • High linear output power: • Low shut-down current (~1 µA) – >29 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5 – Meets 802.11g OFDM ACPR requirement up to 25 dBm – Added EVM~4% up to 23 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 25 dBm • High power-added efficiency/Low operating current for both 802.11g/b applications • On-chip power detection • 25 dB dynamic range on-chip power detection • Simple input/output matching • Packages available – 16-contact VQFN (3mm x 3mm) • All non-Pb (lead-free) devices are RoHS compliant – ~26%/300 mA @ POUT = 24 dBm for 802.11g – ~27%/350 mA @ POUT = 25 dBm for 802.11b • Built-in Ultra-low IREF power-up/down control – IREF ~2 mA Applications • WLAN (IEEE 802.11b/g/n) • Low idle current – ~80 mA ICQ • Home RF • High-speed power-up/down – Turn on/off time (10%-90%)