TC4421AVOA713

TC4421A/TC4422A 9A High-Speed MOSFET Drivers Features General Description • High Peak Output Current: 10A (typ.) • Low Shoot-Through/Cross-Conduction Current in Output Stage • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2A (max.) • Matched Fast Rise and Fall Times: - 15 ns with 4,700 pF Load - 135 ns with 47,000 pF Load • Matched Short Propagation Delays: 42 ns (typ.) • Low Supply Current: - With Logic ‘1’ Input – 130 µA (typ.) - With Logic ‘0’ Input – 33 µA (typ.) • Low Output Impedance: 1.2 (typ.) • Latch-Up Protected: Will Withstand 1.5A Output Reverse Current • Input Will Withstand Negative Inputs Up To 5V • Pin-Compatible with the TC4420/TC4429 and TC4421/TC4422 MOSFET Drivers • Space-Saving, Thermally-Enhanced, 8-Pin DFN Package The TC4421A/TC4422A are improved versions of the earlier TC4421/TC4422 family of single-output MOSFET drivers. These devices are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The TC4421A/TC4422A have matched output rise and fall times, as well as matched leading and falling-edge propagation delay times. The TC4421A/TC4422A devices also have very low cross-conduction current, reducing the overall power dissipation of the device. Applications • • • • • • Line Drivers for Extra Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver LF Initiator These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421A/TC4422A inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages, in addition to a wide operating temperature range, the TC4421A/TC4422A family of 9A MOSFET drivers fit into most any application where high gate/line capacitance drive is required. Package Types(1) 8-Pin DFN(2) TC4421A TC4422A VDD INPUT NC GND 1 8 VDD 2 TC4421A 7 OUTPUT 3 TC4422A 6 OUTPUT 4 5 GND VDD OUTPUT OUTPUT GND VDD 1 INPUT 2 NC 3 GND 4 TC4421A TC4422A VDD 7 OUTPUT OUTPUT 6 OUTPUT OUTPUT 5 GND 2: Exposed pad of the DFN package is electrically isolated.  2005-2013 Microchip Technology Inc. Tab is Common to VDD VDD 8 Note 1: Duplicate pins must both be connected for proper operation. 5-Pin TO-220 TC4421A TC4422A GND INPUT GND VDD GND OUTPUT TC4421A TC4422A 8-Pin PDIP/SOIC DS21946B-page 1 TC4421A/TC4422A Functional Block Diagram VDD TC4421A Inverting 130 µA 300 mV Cross-Conduction Reduction and Pre-Drive Circuitry Output Output TC4422A Non-Inverting Input 4.7V GND Effective Input C = 25 pF DS21946B-page 2  2005-2013 Microchip Technology Inc. TC4421A/TC4422A 1.0 ELECTRICAL CHARACTERISTICS † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † Supply Voltage ..................................................... +20V Input Voltage .................... (VDD + 0.3V) to (GND – 5V) Input Current (VIN > VDD)................................... 50 mA DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V  VDD  18V. Parameters Sym Min Typ Max Units Conditions Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V Logic ‘0’, Low Input Voltage VIL — 1.3 0.8 V Input Current IIN –10 — +10 µA Input Voltage VIN –5 — VDD – 0.3 V High Output Voltage VOH VDD – 0.025 — — V DC Test Low Output Voltage VOL — — 0.025 V DC Test Output Resistance, High ROH — 1.25 1.5  IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL — 0.8 1.1  IOUT = 10 mA, VDD = 18V Peak Output Current IPK — 10.0 — A VDD = 18V Continuous Output Current IDC 2 — — A 10V VDD  18V, TA = +25°C (TC4421A/TC4422A CAT only) (Note 2) Latch-Up Protection Withstand Reverse Current IREV — >1.5 — A Duty cycle2%, t 300 µsec tR — 28 34 ns Figure 4-1, CL = 10,000 pF Fall Time tF — 26 32 ns Figure 4-1, CL = 10,000 pF Propagation Delay Time tD1 — 38 45 ns Figure 4-1, CL = 10,000 pF tD2 — 42 49 ns Figure 4-1, CL = 10,000 pF Input 0VVINVDD Output Switching Time (Note 1) Rise Time Propagation Delay Time Power Supply Power Supply Current Operating Input Voltage Note 1: 2: IS VDD — 130 250 µA VIN = 3V — 35 100 µA VIN = 0V 4.5 — 18 V Switching times ensured by design. Tested during characterization, not production tested.  2005-2013 Microchip Technology Inc. DS21946B-page 3 TC4421A/TC4422A DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V  VDD  18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL — — 0.8 V Input Current IIN –10 — +10 µA High Output Voltage VOH VDD – 0.025 — — V DC Test Low Output Voltage VOL — — 0.025 V DC Test Output Resistance, High ROH — — 2.0  IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL — — 1.6  IOUT = 10 mA, VDD = 18V tR — 38 45 ns Figure 4-1, CL = 10,000 pF Fall Time tF — 33 40 ns Figure 4-1, CL = 10,000 pF Propagation Delay Time tD1 — 50.4 60 ns Figure 4-1, CL = 10,000 pF Propagation Delay Time tD2 — 53 60 ns Figure 4-1, CL = 10,000 pF IS — 200 500 µA VIN = 3V — 50 150 µA VIN = 0V 4.5 — 18 V 0VVINVDD Output Switching Time (Note 1) Rise Time Power Supply Power Supply Current Operating Input Voltage Note 1: VDD Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V. Parameters Sym Min Typ Max Units Specified Temperature Range (V) TA –40 — +125 °C Maximum Junction Temperature TJ — — +150 °C TA –65 — +150 °C Conditions Temperature Ranges Storage Temperature Range Package Thermal Resistances Thermal Resistance, 5L-TO-220 JA — 71 — °C/W Without heat sink Thermal Resistance, 8L-6x5 DFN JA — 33.2 — °C/W Typical 4-layer board with vias to ground plane Thermal Resistance, 8L-PDIP JA — 125 — °C/W Thermal Resistance, 8L-SOIC JA — 155 — °C/W DS21946B-page 4  2005-2013 Microchip Technology Inc. TC4421A/TC4422A 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V. 300 250 140 120 Fall Time (ns) Rise Time (ns) 180 160 22,000 pF 100 80 60 10,000 pF 40 20 1,000 pF 6 100 pF 8 10 150 10V 100 15V 50 0 4 5V 200 12 14 16 0 100 18 1000 Supply Voltage (V) Rise Time vs. Supply FIGURE 2-4: Load. 300 55 250 50 Fall Time vs. Capacitive VDD = 15V 5V 45 200 10V 150 100 40 tRISE 35 30 15V 50 tFALL 25 0 100 20 1000 10000 100000 -40 -25 -10 Capacitive Load (pF) FIGURE 2-2: Load. 5 20 35 50 65 80 95 110 125 Temperature (°C) Rise Time vs. Capacitive FIGURE 2-5: Temperature. Rise and Fall Times vs. 1E-7 10-7 Crossover Energy (A·sec) 180 160 140 Fall Time (ns) 100000 Capacitive Load (pF) Time (ns) Rise Time (ns) FIGURE 2-1: Voltage. 10000 120 22,000 pF 100 80 60 10,000 pF 40 1,000 pF 20 100 pF 1E-8 10-8 1E-9 10-9 0 4 6 8 10 12 14 16 18 4 Supply Voltage (V) FIGURE 2-3: Voltage. Fall Time vs. Supply  2005-2013 Microchip Technology Inc. 6 8 10 12 14 16 18 Supply Voltage (V) FIGURE 2-6: Voltage. Crossover Energy vs Supply DS21946B-page 5 TC4421A/TC4422A 140 80 75 70 65 60 55 50 45 40 35 30 CLOAD = 10,000 pF 120 IQUIESCENT (µA) Propagation Delay (nS) Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V. tD2 tD1 INPUT = High 100 80 60 INPUT = Low 40 20 4 6 8 10 12 14 16 18 4 6 8 Supply Voltage (V) FIGURE 2-7: Supply Voltage. Propagation Delay vs. 65 IQUIESCENT (µA) Propagation Delay (ns) VDD = 12V 70 60 55 tD2 tD1 45 40 2 3 4 5 6 7 8 9 220 200 180 160 140 120 100 80 60 40 20 55 Propagation Delay vs. Input VDD = 12V VIN = 5V CLOAD = 10,000 pF 50 tD2 45 tD1 40 35 30 -40 -25 -10 5 DS21946B-page 6 18 INPUT = Low 5 20 35 50 65 80 95 110 125 Propagation Delay vs. 20 35 50 65 80 95 110 125 Temperature (°C) FIGURE 2-11: vs. Temperature. 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 Quiescent Supply Current VDD = 12V VIH VIL -40 -25 -10 Temperature (°C) FIGURE 2-9: Temperature. 16 INPUT = High -40 -25 -10 10 Input Threshold (V) Propagation Delay (ns) 60 14 VDD = 18V Input Amplitude (V) FIGURE 2-8: Amplitude. 12 FIGURE 2-10: Quiescent Supply Current vs. Supply Voltage. 75 50 10 Supply Voltage (V) 5 20 35 50 65 80 95 110 125 Temperature (°C) FIGURE 2-12: Temperature. Input Threshold vs.  2005-2013 Microchip Technology Inc. TC4421A/TC4422A 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 180 Supply Current (mA) Input Threshold (V) Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V. VIH VIL 4 6 8 10 12 14 16 160 VDD = 18V 120 Input Threshold vs. Supply VIN = 5V (TC4422A) VIN = 0V (TC4421A) TJ = 150°C TJ = 25°C 4 6 8 10 12 14 60 16 Supply Current (mA) ROUT-LO (:) 2.0 1.5 TJ = 25°C 0.5 0.0 4 6 8 10 12 14 Supply Voltage (V) FIGURE 2-15: Low-State Output Resistance vs. Supply Voltage.  2005-2013 Microchip Technology Inc. 10,000 100,000 200 VDD = 12V 180 160 140 120 100 80 60 40 20 0 100 200 kHz 2 MHz 1 MHz 100 kHz 50 kHz 10 kHz 1,000 10,000 100,000 FIGURE 2-17: Supply Current vs. Capactive Load (VDD = 12V). TJ = 150°C 1.0 1,000 Capacitive Load (pF) VIN = 0V (TC4422A) VIN = 5V (TC4421A) 2.5 10 kHz FIGURE 2-16: Supply Current vs. Capactive Load (VDD = 18V). 18 FIGURE 2-14: High-State Output Resistance vs. Supply Voltage. 3.0 50 kHz 40 Supply Voltage (V) 3.5 100 kHz Capacitive Load (pF) Supply Current (mA) ROUT-HI (:) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 MHz 80 Supply Voltage (V) FIGURE 2-13: Voltage. 2 MHz 100 20 0 100 18 200 kHz 140 16 18 220 VDD = 6V 200 180 160 140 120 100 80 60 40 20 0 100 1 MHz 2 MHz 200 kHz 100 kHz 50 kHz 10 kHz 1,000 10,000 100,000 Capacitive Load (pF) FIGURE 2-18: Supply Current vs. Capactive Load (VDD = 6V). DS21946B-page 7 TC4421A/TC4422A Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V. 160 VDD = 18V 10,000 pF Supply Current (mA) Supply Current (mA) 180 47,000 pF 140 22,000 pF 120 100 1000 pF 0.1 µF 80 60 40 470 pF 20 0 10 100 1000 10000 Frequency (kHz) Supply Current (mA) VDD = 6V 22,000 pF 47,000 pF 10,000 pF 0.1 µF 1000 pF 470 pF 10 100 1000 10000 Frequency (kHz) FIGURE 2-21: Supply Current vs. Frequency (VDD = 6V). FIGURE 2-19: Supply Current vs. Frequency (VDD = 18V). 200 180 160 140 120 100 80 60 40 20 0 220 200 180 160 140 120 100 80 60 40 20 0 VDD = 12V 10,000 pF 47,000 pF 22,000 pF 0.1 µF 1000 pF 470 pF 10 100 1000 10000 Frequency (kHz) FIGURE 2-20: Supply Current vs. Frequency (VDD = 12V). DS21946B-page 8  2005-2013 Microchip Technology Inc. TC4421A/TC4422A 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. 8-Pin PDIP, SOIC Pin No. 8-Pin DFN Pin No. 5-Pin TO-220 Symbol 1 1 — VDD 2 2 1 INPUT 3 3 — NC 4 4 2 GND Ground 5 5 4 GND Ground 6 6 5 OUTPUT CMOS push-pull output 7 7 — OUTPUT CMOS push-pull output 3.1 Description Supply input, 4.5V to 18V Control input, TTL/CMOS-compatible input No connection 8 8 3 VDD Supply input, 4.5V to 18V — PAD — NC Exposed metal pad — — TAB VDD Metal tab is at the VDD potential Supply Input (VDD) The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pin. The VDD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A minimum value of 1.0 µF is suggested. 3.3 The MOSFET driver output is a low-impedance, CMOS, push-pull style output capable of driving a capacitive load with 9.0A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity. 3.4 3.2 Control Input The MOSFET driver input is a high-impedance, TTL/CMOS-compatible input. The input also has 300 mV of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow. CMOS Push-Pull Output Ground The ground pins are the return path for the bias current and for the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return. 3.5 Exposed Metal Pad The exposed metal pad of the 6x5 DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a Printed Circuit Board (PCB) to aid in heat removal from the package. 3.6 Metal Tab The metal tab of the TO-220 package is connected to the VDD potential of the device. This connection to VDD can be used as a current carrying path for the device.  2005-2013 Microchip Technology Inc. DS21946B-page 9 TC4421A/TC4422A 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 18V 0.1 µF 0V 0.1 µF 4.7 µF 2 Input Output 6 Output 7 GND 4 +18V tD1 tD2 tF tR 90% 90% Output 1 8 VDD VDD Input 10% 10% 10% 0V Inverting Driver Output CL = 10,000 pF GND 5 TC4421A +5V Input 0V +18V Input: 100 kHz, square wave, tRISE = tFALL  10 nsec 90% 10% tD1 90% tR Output 0V 10% tD2 90% tF 10% Non-Inverting Driver Note: Pinout shown is for the DFN, PDIP and SOIC packages. FIGURE 4-1: DS21946B-page 10 TC4422A Switching Time Test Circuits.  2005-2013 Microchip Technology Inc. TC4421A/TC4422A 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 5-Lead TO-220 XXXXXXXXX XXXXXXXXX YYWWNNN 8-Lead DFN XXXXXXX XXXXXXX XXYYWW NNN XXXXXXXX XXXXXNNN YYWW 8-Lead SOIC (150 mil) XXXXXXXX XXXXYYWW NNN e3 * Note: TC4421A XXXXXXXXX e3 VAT^^ 0514256 Example: TC4421A VMF^e3 0514 256 8-Lead PDIP (300 mil) Legend: XX...X Y YY WW NNN Example: Example: TC4421A PA e^3 256 0514 Example: TC4421A SN e3 0514 256 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2005-2013 Microchip Technology Inc. DS21946B-page 11 TC4421A/TC4422A 5-Lead Plastic Transistor Outline (AT) (TO-220) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging L H1 Q b e3 e1 E e ØP EJECTOR PIN a (5X) C1 A J1 F D Units Dimension Limits e Lead Pitch Overall Lead Centers Space Between Leads Overall Height Overall Width Overall Length Flag Length Flag Thickness Through Hole Center Through Hole Diameter Lead Length Base to Bottom of Lead Lead Thickness Lead Width Mold Draft Angle e1 e3 A E D H1 F Q P L J1 C1 b a INCHES* MIN MAX .060 .072 .263 .273 .030 .040 .160 .190 .385 .415 .560 .590 .234 .258 .045 .055 .103 .113 .146 .156 .540 .560 .090 .115 .022 .014 .025 .040 3° 7° MILLIMETERS MAX MIN 1.52 1.83 6.68 6.93 0.76 1.02 4.06 4.83 9.78 10.54 14.22 14.99 5.94 6.55 1.14 1.40 2.62 2.87 3.71 3.96 14.22 13.72 2.29 2.92 0.36 0.56 0.64 1.02 3° 7° *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC equivalent: TO-220 Drawing No. C04-036 DS21946B-page 12  2005-2013 Microchip Technology Inc. TC4421A/TC4422A 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2005-2013 Microchip Technology Inc. DS21946B-page 13 TC4421A/TC4422A 8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E1 D 2 n 1  E A2 A L c A1  B1 p eB B Units Dimension Limits n p Number of Pins Pitch Top to Seating Plane Molded Package Thickness Base to Seating Plane Shoulder to Shoulder Width Molded Package Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D L c § B1 B eB   MIN .140 .115 .015 .300 .240 .360 .125 .008 .045 .014 .310 5 5 INCHES* NOM MAX 8 .100 .155 .130 .170 .145 .313 .250 .373 .130 .012 .058 .018 .370 10 10 .325 .260 .385 .135 .015 .070 .022 .430 15 15 MILLIMETERS NOM 8 2.54 3.56 3.94 2.92 3.30 0.38 7.62 7.94 6.10 6.35 9.14 9.46 3.18 3.30 0.20 0.29 1.14 1.46 0.36 0.46 7.87 9.40 5 10 5 10 MIN MAX 4.32 3.68 8.26 6.60 9.78 3.43 0.38 1.78 0.56 10.92 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018 DS21946B-page 14  2005-2013 Microchip Technology Inc. TC4421A/TC4422A 8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E E1 p D 2 B n 1  h 45 c A2 A   L Units Dimension Limits n p Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D h L  c B   MIN .053 .052 .004 .228 .146 .189 .010 .019 0 .008 .013 0 0 A1 INCHES* NOM 8 .050 .061 .056 .007 .237 .154 .193 .015 .025 4 .009 .017 12 12 MAX .069 .061 .010 .244 .157 .197 .020 .030 8 .010 .020 15 15 MILLIMETERS NOM 8 1.27 1.35 1.55 1.32 1.42 0.10 0.18 5.79 6.02 3.71 3.91 4.80 4.90 0.25 0.38 0.48 0.62 0 4 0.20 0.23 0.33 0.42 0 12 0 12 MIN MAX 1.75 1.55 0.25 6.20 3.99 5.00 0.51 0.76 8 0.25 0.51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057  2005-2013 Microchip Technology Inc. DS21946B-page 15 TC4421A/TC4422A NOTES: DS21946B-page 16  2005-2013 Microchip Technology Inc. TC4421A/TC4422A APPENDIX A: REVISION HISTORY Revision A (May 2005) • Original Release of this Document. Revision B (January 2013) Added a note to each package outline drawing.  2005-2013 Microchip Technology Inc. DS21946B-page 17 TC4421A/TC4422A NOTES: DS21946B-page 18 l  2005-2013 Microchip Technology Inc. TC4421A/TC4422A PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X Temperature Range XX XXX Package Tape & Reel Device: TC4421A: 9A High-Speed MOSFET Driver, Inverting TC4422A: 9A High-Speed MOSFET Driver, Non-Inverting Temperature Range: V Package: * AT = TO-220, 5-lead MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead (Tape and Reel) PA = Plastic DIP (300 mil Body), 8-lead OA = Plastic SOIC (150 mil Body), 8-lead OA713 = Plastic SOIC (150 mil Body), 8-lead (Tape and Reel) = -40°C to +125°C *All package offerings are Pb Free (Lead Free).  2005-2013 Microchip Technology Inc. Examples: a) TC4421AVAT: 9A High-Speed Inverting MOSFET Driver, TO-220 package, -40°C to +125°C. b) TC4421AVOA: 9A High-Speed Inverting MOSFET Driver, SOIC package, -40°C to +125°C. c) TC4421AVMF: 9A High-Speed Inverting MOSFET Driver, DFN package, -40°C to +125°C. a) TC4422AVPA: 9A High-Speed Non-Inverting MOSFET Driver, PDIP package, -40°C to +125°C. b) TC4422AVOA: 9A High-Speed Non-Inverting MOSFET Driver, SOIC package, -40°C to +125°C. c) TC4422AVMF: 9A High-Speed Non-Inverting MOSFET Driver, DFN package, -40°C to +125°C. DS21946B-page 19 TC4421A/TC4422A NOTES: DS21946B-page 20  2005-2013 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2005-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620769218 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 ==  2005-2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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