Linear Output
Magnetic Field Sensor
AD22151
FEATURES
Adjustable Offset to Unipolar or Bipolar Operation
Low Offset Drift over Temperature Range
Gain Adjustable over Wide Range
Low Gain Drift over Temperature Range
Adjustable First Order Temperature Compensation
Ratiometric to VCC
FUNCTIONAL BLOCK DIAGRAM
REF
VCC/2
TEMP REF
OUT AMP
AD22151
APPLICATIONS
Automotive
Throttle Position Sensing
Pedal Position Sensing
Suspension Position Sensing
Valve Position Sensing
Industrial
Absolute Position Sensing
Proximity Sensing
ISOURCE
SWITCHES
DEMOD
VCC
GENERAL DESCRIPTION
NC
The AD22151 is a linear magnetic field transducer. The sensor
output is a voltage proportional to a magnetic field applied
perpendicularly to the package top surface.
R1
R2
The sensor combines integrated bulk Hall cell technology and
instrumentation circuitry to minimize temperature related drifts
associated with silicon Hall cell characteristics. The architecture
maximizes the advantages of a monolithic implementation while
allowing sufficient versatility to meet varied application requirements with a minimum number of components.
Principal features include dynamic offset drift cancellation
and a built-in temperature sensor. Designed for single 5 V
supply operation, the AD22151 achieves low drift offset and
gain operation over –40∞C to +150∞C. Temperature compensation can accommodate a number of magnetic materials commonly
utilized in economic position sensor assemblies.
0.1F
R3
OUTPUT
NC = NO CONNECT
GND
AD22151
Figure 1. Typical Bipolar Configuration with Low
(< –500 ppm) Compensation
VCC
R1
The transducer can be configured for specific signal gains to
meet various application requirements. Output voltage can be
adjusted from fully bipolar (reversible) field operation to fully
unipolar field sensing.
R4
NC
R2
0.1F
The voltage output achieves near rail-to-rail dynamic range,
capable of supplying 1 mA into large capacitive loads. The
signal is ratiometric to the positive supply rail in all configurations.
R3
OUTPUT
GND
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.
NC = NO CONNECT
AD22151
Figure 2. Typical Unipolar Configuration with
High (⬇ –2000 ppm) Compensation
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© 2003 Analog Devices, Inc. All rights reserved.
AD22151–SPECIFICATIONS (T = 25ⴗC and V+ = 5 V, unless otherwise noted.)
A
Parameter
Min
Typ
Max
Unit
OPERATION
VCC Operating
ICC Operating
4.5
5.0
6.0
6.0
10
V
mA
INPUT
TC3 (Pin 3) Sensitivity/Volt
VCC
± 0.5
2
Input Range1
OUTPUT2
Sensitivity (External Adjustment, Gain = +1)
Linear Output Range
Output Min
Output Max (Clamp)
Drive Capability
V
0.4
10
mV/G
% of VCC
% of VCC
% of VCC
mA
90
5.0
93
1.0
VCC
2
Offset @ 0 Gauss
Offset Adjust Range
Output Short Circuit Current
mV/G/V
160
V
5.0
95
ACCURACIES
Nonlinearity (10% to 90% Range)
Gain Error (Over Temperature Range)
Offset Error (Over Temperature Range)
Uncompensated Gain TC (GTCU)
5.0
% of VCC
mA
0.1
±1
± 6.0
950
% FS
%
G
ppm
RATIOMETRICITY ERROR
1.0
%V/VCC
3 dB ROLL-OFF (5 mV/G)
5.7
kHz
OUTPUT NOISE FIGURE (6 kHz BW)
2.4
mV/rms
PACKAGE
8-Lead SOIC
OPERATING TEMPERATURE RANGE
–40
+150
∞C
NOTES
1
–40∞C to +150∞C.
2
RL = 4.7 kW.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS*
ORDERING GUIDE
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 V
Package Power Dissipation . . . . . . . . . . . . . . . . . . . . . . 25 mW
Storage Temperature . . . . . . . . . . . . . . . . . . . –50∞C to +160∞C
Output Sink Current, IO . . . . . . . . . . . . . . . . . . . . . . . . 15 mA
Magnetic Flux Density . . . . . . . . . . . . . . . . . . . . . . Unlimited
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . 300∞C
Model
Temperature
Range
Package
Package
Description Option
AD22151YR
–40∞C to +150∞C 8-Lead SOIC R-8
AD22151YR-REEL –40∞C to +150∞C 8-Lead SOIC R-8
*Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to the absolute maximum
rating conditions for extended periods may affect device reliability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD22151 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
–2–
REV. A
AD22151
PIN CONFIGURATION
TC1 1
PIN FUNCTION DESCRIPTIONS
Pin No.
Description
Connection
1
Temperature Compensation 1
Output
2
Temperature Compensation 2
Output
3
Temperature Compensation 3
Input/Output
4
Ground
5
Output
Output
6
Gain
Input
6
7
Reference
Output
5
8
Positive Power Supply
8
VCC
AD22151 7 REF
TOP VIEW
3
TC3
(Not to Scale) 6 GAIN
TC2 2
GND 4
5
OUTPUT
AREA OF SENSITIVITY*
1
8
2
7
3
4
(Not to Scale)
*SHADED AREA REPRESENTS
MAGNETIC FIELD AREA OF
SENSITIVITY (20MILS ⴛ 20MILS)
POSITIVE B FIELD INTO TOP OF
PACKAGE RESULTS IN A POSITIVE
VOLTAGE RESPONSE
“valleys” of the silicon crystal. Mechanical force on the sensor is
attributable to package-induced stress. The package material
acts to distort the encapsulated silicon, altering the Hall cell
gain by ± 2% and GTCU by ± 200 ppm.
CIRCUIT OPERATION
The AD22151 consists of epi Hall plate structures located at the
center of the die. The Hall plates are orthogonally sampled by
commutation switches via a differential amplifier. The two
amplified Hall signals are synchronously demodulated to provide a
resultant offset cancellation (see Figure 3). The demodulated
signal passes through a noninverting amplifier to provide final
gain and drive capability. The frequency at which the output
signal is refreshed is 50 kHz.
Figure 4 shows the typical GTCU characteristic of the AD22151.
This is the observable alteration of gain with respect to temperature with Pin 3 (TC3) held at a constant 2.5 V (uncompensated).
If a permanent magnet source used in conjunction with the
sensor also displays an intrinsic TC (BTC), it will require factoring
into the total temperature compensation of the sensor assembly.
0.005
Figures 5 and 6 represent typical overall temperature/gain performance for a sensor and field combination (BTC = –200 ppm).
Figure 5 is the total drift in volts over a –40∞C to +150∞C temperature range with respect to applied field. Figure 6 represents
typical percentage gain variation from 25∞C. Figures 7 and 8
show similar data for a BTC = –2000 ppm.
0.004
0.003
OFFSET – V
0.002
0.001
0
14
–0.001
12
–0.002
10
–0.003
8
120
100
80
60
40
20
TEMPERATURE – ⴗC
0
–20
% GAIN
–0.004
140
–40
Figure 3. Relative Quiescent Offset vs. Temperature
4
2
0
TEMPERATURE DEPENDENCIES
–2
The uncompensated gain temperature coefficient (GTCU) of the
AD22151 is the result of fundamental physical properties associated with silicon bulk Hall plate structures. Low doped Hall
plates operated in current bias mode exhibit a temperature
relationship determined by the action of scattering mechanisms
and doping concentration.
–4
–6
–40
10
60
TEMPERATURE – ⴗC
110
160
Figure 4. Uncompensated Gain Variation (from
25 ∞C) vs. Temperature
The relative value of sensitivity to magnetic field can be altered
by the application of mechanical force upon silicon. The mechanism is principally the redistribution of electrons throughout the
REV. A
6
–3–
AD22151
0.025
2.0
1.8
1.6
0.020
1.2
0.015
% GAIN
DELTA SIGNAL – V
1.4
0.010
1.0
0.8
0.6
0.4
0.005
0.2
0
0
–600
–400
–200
0
200
FIELD – Gauss
400
–0.2
–40
600
Figure 5. Signal Drift over Temperature (–40 ∞C to
+150 ∞C) vs. Field (–200 ppm); 5 V Supply
110
160
TEMPERATURE COMPENSATION
The AD22151 incorporates a “thermistor” transducer that
detects relative chip temperature within the package. This
function provides a compensation mechanism for the various
temperature dependencies of the Hall cell and magnet combinations. The temperature information is accessible at Pins 1 and
2 (⬇ +2900 ppm/∞C) and Pin 3 (⬇ –2900 ppm/∞C), as represented by Figure 9. The compensation voltages are trimmed
to converge at VCC/2 at 25∞C. Pin 3 is internally connected to
the negative TC voltage via an internal resistor (see the Functional Block Diagram). An external resistor connected between
Pin 3 and Pins 1 or 2 will produce a potential division of the
two complementary TC voltages to provide optimal compensation. The Pin 3 internal resistor provides a secondary TC
designed to reduce second order Hall cell temperature sensitivity.
0.20
0.15
% GAIN
60
TEMPERATURE – ⴗC
Figure 8. Gain Variation (from 25 ∞C) vs. Temperature
(–2000 ppm Field; R1 = 12 kW)
0.25
0.10
0.05
0
–0.05
–40
10
60
TEMPERATURE – ⴗC
110
160
Figure 6. Gain Variation from 25 ∞C vs. Temperature
(–200 ppm) Field; R1 –15 kW
1.0
0.8
0.6
0.040
0.4
VOLTS – Reference
0.045
0.035
DELTA SIGNAL – V
10
0.030
0.025
TC1, TC2 VOLTS
0.2
0
–0.2
–0.4
TC3 VOLTS
0.020
–0.6
0.015
–0.8
0.010
–1.0
150
0.005
0
–800
–600
–400
–200
0
200
FIELD – Gauss
400
600
112
74
36
TEMPERATURE – ⴗC
–2
–40
Figure 9. TC1, TC2, and TC3 with Respect to Reference
vs. Temperature
800
Figure 7. Signal Drift over Temperature (–40 ∞C to
+150 ∞C) vs. Field (–2000 ppm); 5 V Supply
The voltages present at Pins 1, 2, and 3 are proportional to the
supply voltage. The presence of the Pin 2 internal resistor distinguishes the effective compensation ranges of Pins 1 and 2.
(See temperature configuration in Figures 1 and 2, and typical
resistor values in Figures 10 and 11.)
Variation occurs in the operation of the gain temperature compensation for two reasons. First, the die temperature within the
package is somewhat higher than the ambient temperature due
–4–
REV. A
AD22151
to self-heating as a function of power dissipation. Second, package stress effect alters the specific operating parameters of the
gain compensation, particularly the specific crossover temperature of TC1, TC3 ( ⬇ ± 10∞C).
800
600
400
DRIFT – ppm
CONFIGURATION AND COMPONENT SELECTION
There are three areas of sensor operation that require external
component selection: temperature compensation (R1), signal
gain (R2 and R3), and offset (R4).
200
0
Temperature
–200
If the internal gain compensation is used, an external resistor is
required to complete the gain TC circuit at Pin 3. A number of
factors contribute to the value of this resistor:
–400
–600
a. The intrinsic Hall cell sensitivity TC ⬇ 950 ppm.
b. Package induced stress variation in a. ⬇ ± 150 ppm.
c. Specific field TC ⬇ –200 ppm (Alnico), –2000 ppm
(Ferrite), 0 ppm (electromagnet), and so on.
d. R1, TC.
0
10
15
20
25
30
R1 – k⍀
35
40
45
GAIN AND OFFSET
The operation of the AD22151 can be bipolar (i.e., 0 Gauss =
VCC/2), or a ratiometric offset can be implemented to position
Zero Gauss point at some other potential (i.e., 0.25 V).
The gain of the sensor can be set by the appropriate R2 and R3
resistor values (see Figure 1) such that:
Pin 2 uses an internal resistive TC to optimize smaller field
coefficients such as Alnico down to 0 ppm coefficients when
only the sensor gain TC itself is dominant. Because the TC of
R1 itself will also affect the compensation, a low TC resistor
(± 50 ppm) is recommended.
Gain = 1 +
R3
¥ 0.4 mV / G
R2
(1)
However, if an offset is required to position the quiescent output at some other voltage, the gain relationship is modified to:
Figures 10 and 11 indicate R1 resistor values and their associated effectiveness for Pins 1 and 2, respectively. Note that the
indicated drift response in both cases incorporates the intrinsic
Hall sensitivity TC (BTCU).
Gain = 1 +
For example, the AD22151 sensor is to be used in conjunction
with an Alnico material permanent magnet. The TC of such magnets is ⬇ –200 ppm (see Figures 5 and 6). Figure 11 indicates
that a compensating drift of 200 ppm at Pin 3 requires a nominal value of R1 = 18 kW (assuming negligible drift of R1 itself).
R3
(R 2 R 4 )
¥ 0.4 mV / G
(2)
The offset that R4 introduces is:
Offset = 1 +
R3
¥ (V – V
)
R
2
( + R4) CC OUT
(3)
For example, at VCC = 5 V at room temperature, the internal gain of
the sensor is approximately 0.4 mV/Gauss. If a sensitivity of
6 mV/Gauss is required with a quiescent output voltage of 1 V,
the calculations below apply (see Figure 2).
3500
3000
A value would be selected for R3 that complied with the various
considerations of current and power dissipation, trim ranges (if
applicable), and so on. For the purpose of example, assume a
value of 85 kW.
2500
2000
1500
To achieve a quiescent offset of 1 V requires a value for R4 as:
Ê VCC ˆ
Á
˜ –1
Ë 2 ¯
= 0.375
VCC
1000
500
0
0
5
10
15
R1 – k⍀
20
25
(4)
Thus:
30
Ê 85 kW ˆ
R4 = Á
˜ – 85 kW = 141.666 kW
Ë 0.375 ¯
Figure 10. Drift Compensation (Pins 1 and 3) vs.
Typical Resistor Value R1
The gain required would be 6/0.4 (mV/Gauss) = 15.
REV. A
50
Figure 11. Drift Compensation (Pins 2 and 3) vs.
Typical Resistor Value R1
The final value of target compensation also dictates the use of
either Pin 1 or Pin 2. Pin 1 is provided to allow for large negative field TC devices such as ferrite magnets; thus, R1 would be
connected to Pins 1 and 3.
DRIFT – ppm
5
–5–
(5)
AD22151
Knowing the values of R3 and R4 and noting Equation 2, the
parallel combination of R2 and R4 required is:
7
6
85 kΩ
= 6.071 kΩ
(15 – 1)
3dB FREQUENCY (kHz)
FREQUENCY – kHz
5
Thus:
1
= 6.342 kΩ
R2 =
1
1
6.071 kΩ – 141.666 kΩ
4
3
2
1
0
1
2
NOISE
The principal noise component in the sensor is thermal noise
from the Hall cell. Clock feedthrough into the output signal is
largely suppressed with application of a supply bypass capacitor.
4
3
GAIN – mV/Gauss
5
Figure 13. Small Signal Gain Bandwidth vs. Gain
TEK STOP: 25.0 kS/s [
3ACQS
T
[
Figure 12 shows the power spectral density (PSD) of the output
signal for a gain of 5 mV/Gauss. The effective bandwidth of the
sensor is approximately 5.7 kHz, as shown in Figure 13. The
PSD indicates an rms noise voltage of 2.8 mV within the 3 dB
bandwidth of the sensor. A wideband measurement of 250 MHz
indicates 3.2 mV rms (see Figure 14a).
CH2 p-p
19.2mV
In many position sensing applications, bandwidth requirements
can be as low as 100 Hz. Passing the output signal through a
100 Hz LP filter, for example, would reduce the rms noise voltage to ⬇1 mV. A dominant pole may be introduced into the
output amplifier response by connection of a capacitor across
feedback resistor R3 as a simple means of reducing noise at the
expense of bandwidth. Figure 14b indicates the output signal of
a 5 mV/G sensor bandwidth limited to 180 Hz with a 0.01 µF
feedback capacitor.
CH2 10.0mV
BW M2.00ms
Figure 14a. Peak-to-Peak Full Bandwidth (10 mV/Division)
Note: Measurements were taken with a 0.1 µF decoupling
capacitor between VCC and GND at 25°C.
B MARKER ⴛ 64Hz
6
TEK STOP: 25.0 kS/s [
7ACQS
T
Y: 3.351H
[
CH2 p-p
4.4mV
100H
LOGMAG
5 dB/div
CH2 10.0mV
BW M2.00ms
Figure 14b. Peak-to-Peak 180 Hz Bandwidth
(10 mV/Division)
1H
START: 64Hz
NOISE: PSD (8mV/GAUSS)
STOP: 25.6kHz
RMS: 64
Figure 12. Power Spectral Density (5 mV/G)
–6–
REV. A
AD22151
2.496
0.06
0.05
2.494
0.04
0.03
2.492
VOLTS
% ERROR
0.02
0.01
0
–0.01
2.490
GAIN = 3.78mV/G
2.488
–0.02
–0.03
2.486
–0.04
–0.05
–600
–400
–200
0
200
FIELD – Gauss
400
2.484
140
600
120
100
80
60
40
20
TEMPERATURE – ⴗC
OUTLINE DIMENSIONS
8-Lead Standard Small Outline Package [SOIC]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
5.00 (0.1968)
4.80 (0.1890)
8
5
1
4
1.27 (0.0500)
BSC
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
SEATING
0.10
PLANE
6.20 (0.2440)
5.80 (0.2284)
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.33 (0.0130)
0.50 (0.0196)
ⴛ 45ⴗ
0.25 (0.0099)
8ⴗ
0.25 (0.0098) 0ⴗ 1.27 (0.0500)
0.41 (0.0160)
0.19 (0.0075)
COMPLIANT TO JEDEC STANDARDS MS-012AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
REV. A
–20
–40
Figure 16. Absolute Offset Volts vs. Temperature
Figure 15. Integral Nonlinearity vs. Field
4.00 (0.1574)
3.80 (0.1497)
0
–7–
AD22151
Revision History
Location
Page
2/03—Data Sheet changed from REV. 0 to REV. A.
PRINTED IN U.S.A.
Updated OUTLINE DIMENSIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
C00675–0–2/03(A)
Change to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
–8–
REV. A
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