Fractional-N Frequency Synthesizer
ADF4153
Data Sheet
FEATURES
GENERAL DESCRIPTION
RF bandwidth to 4 GHz
2.7 V to 3.3 V power supply
Separate VP allows extended tuning voltage
Y version available: −40°C to +125°C
Programmable fractional modulus
Programmable charge pump currents
3-wire serial interface
Analog and digital lock detect
Power-down mode
Pin-compatible with ADF4110/ADF4111/ADF4112/ADF4113
and ADF4106
Consistent RF output phase
Loop filter design possible with ADIsimPLL
Qualified for automotive applications
The ADF4153 is a fractional-N frequency synthesizer
that implements local oscillators in the upconversion
and downconversion sections of wireless receivers and
transmitters. It consists of a low noise digital phase
frequency detector (PFD), a precision charge pump, and
a programmable reference divider. There is a Σ-Δ based
fractional interpolator to allow programmable fractional-N
division. The INT, FRAC, and MOD registers define an
overall N divider (N = (INT + (FRAC/MOD))). In addition,
the 4-bit reference counter (R counter) allows selectable
REFIN frequencies at the PFD input. A complete phaselocked loop (PLL) can be implemented if the synthesizer is
used with an external loop filter and a voltage controlled
oscillator (VCO).
APPLICATIONS
A simple 3-wire interface controls all on-chip registers.
The device operates with a power supply ranging from
2.7 V to 3.3 V and can be powered down when not in use.
CATV equipment
Base stations for mobile radio (GSM, PCS, DCS, WiMAX,
SuperCell 3G, CDMA, W-CDMA)
Wireless handsets (GSM, PCS, DCS, CDMA, W-CDMA)
Wireless LANs, PMR
Communications test equipment
FUNCTIONAL BLOCK DIAGRAM
AVDD DVDD VP SDVDD
RSET
ADF4153
REFERENCE
4-BIT
R COUNTER
×2
DOUBLER
REFIN
+
PHASE
FREQUENCY
DETECTOR
–
VDD
HIGH-Z
CHARGE
PUMP
DGND
LOCK
DETECT
MUXOUT
CP
OUTPUT
MUX
CURRENT
SETTING
VDD
RDIV
RFCP3 RFCP2 RFCP1
NDIV
N-COUNTER
RFINA
RFINB
THIRD ORDER
FRACTIONAL
INTERPOLATOR
CLK
DATA
MODULUS
REG
INTEGER
REG
03685-001
LE
FRACTION
REG
24-BIT
DATA
REGISTER
AGND
DGND
CPGND
Figure 1.
Rev. F
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ADF4153
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
R Divider Register, R1................................................................ 16
Applications ....................................................................................... 1
Control Register, R2 ................................................................... 16
General Description ......................................................................... 1
Noise and Spur Register, R3 ...................................................... 17
Functional Block Diagram .............................................................. 1
Reserved Bits ............................................................................... 17
Revision History ............................................................................... 3
Initialization Sequence .............................................................. 18
Specifications..................................................................................... 4
RF Synthesizer: A Worked Example ........................................ 18
Timing Specifications .................................................................. 5
Modulus ....................................................................................... 18
Absolute Maximum Ratings ............................................................ 6
Reference Doubler and Reference Divider ............................. 18
ESD Caution .................................................................................. 6
12-Bit Programmable Modulus ................................................ 18
Pin Configurations and Function Descriptions ........................... 7
Fastlock with Spurious Optimization ...................................... 19
Typical Performance Characteristics ............................................. 8
Spur Mechanisms ....................................................................... 19
Circuit Description ........................................................................... 9
Spur Consistency ........................................................................ 20
Reference Input Section ............................................................... 9
Phase Resync ............................................................................... 20
RF Input Stage ............................................................................... 9
Filter Design—ADIsimPLL....................................................... 20
RF INT Divider ............................................................................. 9
Interfacing ................................................................................... 20
INT, FRAC, MOD, and R Relationship ..................................... 9
PCB Design Guidelines for Chip Scale Package .................... 21
RF R Counter ................................................................................ 9
Applications Information .............................................................. 22
Phase Frequency Detector (PFD) and Charge Pump ............ 10
Local Oscillator for a GSM Base Station Transmitter ........... 22
MUXOUT and Lock Detect ...................................................... 10
Outline Dimensions ....................................................................... 23
Input Shift Registers ................................................................... 10
Ordering Guide .......................................................................... 24
Program Modes .......................................................................... 10
Automotive Products ................................................................. 24
N Divider Register, R0 ............................................................... 16
Rev. F | Page 2 of 24
Data Sheet
ADF4153
REVISION HISTORY
11/13—Rev. E to Rev. F
Change to ICP Sink/Source Parameter, Table 1 .............................. 4
Changes to Ordering Guide ...........................................................24
7/12—Rev. D to Rev. E
Updated Outline Dimensions ........................................................23
Changes to Ordering Guide ...........................................................24
8/10—Rev. C to Rev. D
Changes to Features Section ............................................................ 1
Changes to Noise Characteristics Parameter, Table 1 .................. 5
Changes to Figure 4........................................................................... 7
Changes to Ordering Guide ...........................................................24
Added Automotive Products Section ...........................................24
10/08—Rev. B to Rev. C
Added Y Version (Throughout) ...................................................... 1
Changes to Ordering Guide ...........................................................23
08/05—Rev. A to Rev. B
Changes to Features .......................................................................... 1
Changes to Applications ................................................................... 1
Changes to Specifications ................................................................. 3
Changes to Absolute Maximum Ratings ........................................ 5
Changes to Figure 7 to Figure 9....................................................... 7
Deleted Figure 8 to Figure 10; Renumbered Sequentially ........... 8
Deleted Figure 11 and Figure 14; Renumbered Sequentially ...... 9
Changes to Table 9 ..........................................................................13
Added Initialization Sequence Section ........................................ 17
Changes to Fastlock with Spurious Optimization Section ........ 18
Inserted Figure 16; Renumbered Sequentially ............................ 18
Added Spur Mechanisms Section ................................................. 18
Added Table 11; Renumbered Sequentially ................................. 18
Added Spur Consistency Section .................................................. 19
Changes to Phase Resync Section ................................................. 19
Inserted Figure 17; Renumbered Sequentially ............................ 19
Deleted Spurious Signals—
Predicting Where They Will Appear Section .............................. 20
Changes to Figure 19 ...................................................................... 20
Changes to Figure 20 ...................................................................... 21
Added Applications Section .......................................................... 21
Changes to Figure 22 Caption ....................................................... 22
Changes to Ordering Guide ........................................................... 22
1/04—Rev. 0 to Rev. A
Renumbered Figures and Tables ...................................... Universal
Changes to Specifications................................................................. 3
Changes to Pin Function Description ............................................ 7
Changes to RF Power-Down Section ........................................... 17
Changes to PCB Design Guidelines for Chip Scale
Package Section ............................................................................... 21
Updated Outline Dimensions........................................................ 22
Updated Ordering Guide ............................................................... 22
7/03—Revision 0: Initial Version
Rev. F | Page 3 of 24
ADF4153
Data Sheet
SPECIFICATIONS
AVDD = DVDD = SDVDD = 2.7 V to 3.3 V; VP = AVDD to 5.5 V; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted;
dBm referred to 50 Ω.
Table 1.
Parameter
RF CHARACTERISTICS (3 V)
RF Input Frequency (RFIN)
REFERENCE CHARACTERISTICS
REFIN Input Frequency
REFIN Input Sensitivity
REFIN Input Capacitance
REFIN Input Current
PHASE DETECTOR
Phase Detector Frequency 4
CHARGE PUMP
ICP Sink/Source
High Value
Low Value
Absolute Accuracy
RSET Range
ICP Three-State Leakage Current
Matching
ICP vs. VCP
ICP vs. Temperature
LOGIC INPUTS
VINH, Input High Voltage
VINL, Input Low Voltage
IINH/IINL, Input Current
CIN, Input Capacitance
LOGIC OUTPUTS
VOH, Output High Voltage
VOL, Output Low Voltage
POWER SUPPLIES
AVDD
DVDD, SDVDD
VP
IDD
Low Power Sleep Mode
B Version 1
Y Version 2
Unit
0.5/4.0
0.5/4.0
0.5/4.0
0.5/4.0
GHz min/max
GHz min/max
1.0/4.0
1.0/4.0
GHz min/max
10/250
10/250
MHz min/max
0.7/AVDD
10
±100
0.7/AVDD
10
±100
V p-p min/max
pF max
µA max
32
32
MHz max
5
312.5
2.5
1.5/10
1
2
2
2
5
312.5
2.5
1.5/10
4.5
2
2
2
mA typ
µA typ
% typ
kΩ min/max
nA typ
% typ
% typ
% typ
1.4
0.6
±1
10
1.4
0.6
±1
10
V min
V max
µA max
pF max
1.4
0.4
1.4
0.4
V min
V max
2.7/3.3
AVDD
AVDD/5.5
24
1
2.7/3.3
AVDD
AVDD/5.5
24
1
V min/V max
V min/V max
mA max
µA typ
Rev. F | Page 4 of 24
Test Conditions/Comments
See Figure 12 for input circuit
B Version: −8 dBm minimum/0 dBm maximum
Y Version: −6.5 dBm minimum/0 dBm maximum
For lower frequencies, ensure slew rate (SR) > 400 V/µs
−10 dBm/0 dBm minimum/maximum
See Figure 11 for input circuit
For f < 10 MHz, use a dc-coupled, CMOS-compatible
square wave; slew rate > 25 V/µs
Biased at AVDD/2 3
Programmable; see Table 9
With RSET = 5.1 kΩ
With RSET = 5.1 kΩ
Sink and source current
0.5 V < VCP < VP – 0.5
0.5 V < VCP < VP – 0.5
VCP = VP/2
Open-drain 1 kΩ pull-up to 1.8 V
IOL = 500 µA
20 mA typical
Data Sheet
ADF4153
Parameter
NOISE CHARACTERISTICS
Normalized Phase Noise Floor
(PNSYNTH) 5
Normalized 1/f Noise (PN1_f) 6
Phase Noise Performance 7
1750 MHz Output 8
B Version 1
Y Version 2
Unit
Test Conditions/Comments
−220
−220
dBc/Hz typ
PLL loop BW = 500 kHz
−114
−114
dBc/Hz typ
−102
−102
dBc/Hz typ
Measured at 10 kHz offset, normalized to 1 GHz
@ VCO output
@ 5 kHz offset, 25 MHz PFD frequency
Operating temperature for B version is −40°C to +85°C.
Operating temperature for Y version is −40°C to +125°C.
3
AC coupling ensures AVDD/2 bias.
4
Guaranteed by design. Sample tested to ensure compliance.
5
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log(N) (where N is the N divider
value) and 10 log(FPFD). PNSYNTH = PNTOT − 10 log(FPFD) − 20 log(N).
6
The PLL phase noise is composed of 1/f (flicker) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency, FRF,
and at an offset frequency, f, is given by PN = P1_f + 10 log(10 kHz/f) + 20 log(FRF/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in ADIsimPLL.
7
The phase noise is measured with the EV-ADF4153SD1Z and the Agilent E5500 phase noise system.
8
fREFIN = 100 MHz; FPFD = 25 MHz; offset frequency = 5 kHz; RFOUT = 1750 MHz; N = 70; loop BW = 20 kHz; lowest noise mode.
1
2
TIMING SPECIFICATIONS
AVDD = DVDD = SDVDD = 2.7 V to 3.3 V; VP = AVDD to 5.5 V; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted;
dBm referred to 50 Ω.
Table 2.
Parameter
t1
t2
t3
t4
t5
t6
t7
Limit at TMIN to TMAX (B Version)
20
10
10
25
25
10
20
Unit
ns min
ns min
ns min
ns min
ns min
ns min
ns min
t4
Test Conditions/Comments
LE setup time
DATA to CLK setup time
DATA to CLK hold time
CLK high duration
CLK low duration
CLK to LE setup time
LE pulse width
t5
CLK
t3
t2
DATA
DB23 (MSB)
DB22
DB2
DB0 (LSB)
(CONTROL BIT C1)
DB1
(CONTROL BIT C2)
t7
LE
t1
03685-026
t6
LE
Figure 2. Timing Diagram
Rev. F | Page 5 of 24
ADF4153
Data Sheet
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, GND = AGND = DGND = 0 V,
VDD = AVDD = DVDD = SDVDD, unless otherwise noted.
Table 3.
Parameter
VDD to GND
VDD to VDD
VP to GND
VP to VDD
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REFIN, RFIN to GND
Operating Temperature Range
Industrial (B Version)
Extended (Y Version)
Storage Temperature Range
Maximum Junction Temperature
TSSOP θJA Thermal Impedance
LFCSP θJA Thermal Impedance
(Paddle Soldered)
Reflow Soldering
Peak Temperature
Time at Peak Temperature
Maximum Junction Temperature
Rating
−0.3 V to +4 V
−0.3 V to +0.3 V
−0.3 V to +5.8 V
−0.3 V to +5.8 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
−40°C to +85°C
−40°C to +125°C
−65°C to +125°C
150°C
112°C/W
30.4°C/W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of