Integrated Synthesizer and VCO
ADF4360-7
Data Sheet
FEATURES
GENERAL DESCRIPTION
Output frequency range: 350 MHz to 1800 MHz
Divide-by-2 output
3.0 V to 3.6 V power supply
1.8 V logic compatibility
Integer-N synthesizer
Programmable dual-modulus prescaler 8/9, 16/17
Programmable output power level
3-wire serial interface
Analog and digital lock detect
Hardware and software power-down mode
The ADF4360-7 is an integrated integer-N synthesizer and
voltage controlled oscillator (VCO). The ADF4360-7 center
frequency is set by external inductors. This allows a frequency
range of between 350 MHz to 1800 MHz. In addition, a divideby-2 option is available, whereby the user receives an RF output
of between 175 MHz and 900 MHz.
Control of all the on-chip registers is through a simple 3-wire
interface. The device operates with a power supply ranging from
3.0 V to 3.6 V and can be powered down when not in use.
APPLICATIONS
Wireless handsets (DECT, GSM, PCS, DCS, WCDMA)
Test equipment
Wireless LANs
CATV equipment
FUNCTIONAL BLOCK DIAGRAM
AVDD
DVDD
RSET
CE
ADF4360-7
MUXOUT
MULTIPLEXER
14-BIT R
COUNTER
REFIN
LOCK
DETECT
CLK
DATA
MUTE
24-BIT
FUNCTION
LATCH
24-BIT
DATA REGISTER
LE
CHARGE
PUMP
CP
PHASE
COMPARATOR
VVCO
VTUNE
L1
L2
CC
CN
INTEGER
REGISTER
RFOUTA
VCO
CORE
13-BIT B
COUNTER
5-BIT A
COUNTER
MULTIPLEXER
N = (BP + A)
RFOUTB
LOAD
LOAD
AGND
DGND
DIVSEL = 1
DIVSEL = 2
÷2
04441-001
PRESCALER
P/P+1
OUTPUT
STAGE
CPGND
Figure 1.
Rev. F
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ADF4360-7
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Input Shift Register .................................................................... 11
Applications ....................................................................................... 1
VCO ............................................................................................. 11
General Description ......................................................................... 1
Output Stage................................................................................ 12
Functional Block Diagram .............................................................. 1
Latch Structure ........................................................................... 13
Revision History ............................................................................... 2
Power-Up ..................................................................................... 17
Specifications..................................................................................... 3
Control Latch .............................................................................. 19
Timing Characteristics ..................................................................... 5
N Counter Latch ......................................................................... 20
Absolute Maximum Ratings ............................................................ 6
R Counter Latch ......................................................................... 20
Transistor Count ........................................................................... 6
Applications Information .............................................................. 21
ESD Caution .................................................................................. 6
Frequency Generator ................................................................. 21
Pin Configuration and Function Descriptions ............................. 7
Choosing the Correct Inductance Value ................................. 22
Typical Performance Characteristics ............................................. 8
Choosing the Appropriate PFD Frequency ............................ 22
Circuit Description ......................................................................... 10
Fixed Frequency LO ................................................................... 22
Reference Input Section ............................................................. 10
Interfacing ................................................................................... 23
Prescaler (P/P + 1) ...................................................................... 10
PCB Design Guidelines for Chip Scale Package........................... 23
A and B Counters ....................................................................... 10
Output Matching ........................................................................ 24
R Counter .................................................................................... 10
Outline Dimensions ....................................................................... 25
PFD and Charge Pump .............................................................. 10
Ordering Guide .......................................................................... 25
MUXOUT and Lock Detect ...................................................... 11
REVISION HISTORY
9/2018—Rev. E to Rev. F
Added Choosing the Appropriate PFD Frequency Section ...... 22
4/2016—Rev. D to Rev. E
Changed ADF4360 Family to ADF4360-7, ADSP-21xx
to ADSP-2181, and EV-ADF4360-xEB1 to
EV-ADF4360-7EB1Z..................................................... Throughout
Changes to Figure 3 .......................................................................... 7
Updated Outline Dimensions ....................................................... 25
Changes to Ordering Guide .......................................................... 25
3/2013—Rev. C to Rev. D
Changes to Prescaler (P/P + 1) Section ....................................... 10
11/2012—Rev. B to Rev. C
Changes to Table 3 ............................................................................ 6
Updated Outline Dimensions ....................................................... 25
2/2012—Rev. A to Rev. B
Changes to Figure 3 and Table 4......................................................8
Changes to Output Matching Section.......................................... 24
Updated Outline Dimensions ....................................................... 25
Changes to Ordering Guide .......................................................... 25
11/2004—Rev. 0 to Rev. A
Updated Format .................................................................. Universal
Changes to General Description .....................................................1
Changes to Specifications .................................................................3
Changes to the Reference Input Section...................................... 10
Changes to Power-Up Section ...................................................... 17
Added Table 10 ............................................................................... 17
Added Figure 22 ............................................................................. 17
Updated Outline Dimensions ....................................................... 25
2/2004—Revision 0: Initial Version
Rev. F | Page 2 of 25
Data Sheet
ADF4360-7
SPECIFICATIONS1
AVDD = DVDD = VVCO = 3.3 V ± 10%; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted.
Table 1.
Parameter
REFIN CHARACTERISTICS
REFIN Input Frequency
REFIN Input Sensitivity
REFIN Input Capacitance
REFIN Input Current
PHASE DETECTOR
Phase Detector Frequency2
CHARGE PUMP
ICP Sink/Source3
High Value
Low Value
RSET Range
ICP Three-State Leakage Current
Sink and Source Current Matching
ICP vs. VCP
ICP vs. Temperature
LOGIC INPUTS
VINH, Input High Voltage
VINL, Input Low Voltage
IINH/IINL, Input Current
CIN, Input Capacitance
LOGIC OUTPUTS
VOH, Output High Voltage
IOH, Output High Current
VOL, Output Low Voltage
POWER SUPPLIES
AVDD
DVDD
VVCO
AIDD4
DIDD4
IVCO4, 5
IRFOUT4
Low Power Sleep Mode
B Version
Unit
Test Conditions/Comments
10/250
MHz min/max
0.7/AVDD
0 to AVDD
5.0
±60
V p-p min/max
V max
pF max
µA max
For f < 10 MHz, use a dc-coupled CMOS-compatible
square wave, slew rate > 21 V/µs.
AC-coupled.
CMOS compatible.
8
MHz max
2.5
0.312
2.7/10
0.2
2
1.5
2
mA typ
mA typ
kΩ
nA typ
% typ
% typ
% typ
1.5
0.6
±1
3.0
V min
V max
µA max
pF max
DVDD – 0.4
500
0.4
V min
µA max
V max
3.0/3.6
AVDD
AVDD
10
2.5
14.0
3.5 to 11.0
7
V min/V max
With RSET = 4.7 kΩ.
mA typ
mA typ
mA typ
mA typ
µA typ
1.25 V ≤ VCP ≤ 2.5 V.
1.25 V ≤ VCP ≤ 2.5 V.
VCP = 2.0 V.
CMOS output chosen.
IOL = 500 µA.
ICORE = 5 mA.
RF output stage is programmable.
Rev. F | Page 3 of 25
ADF4360-7
Parameter
RF OUTPUT CHARACTERISTICS5
Maximum VCO Output Frequency
Data Sheet
B Version
Unit
Test Conditions/Comments
1800
MHz
ICORE = 5 mA. Depending on L. See the Choosing the Correct
Inductance Value section.
Minimum VCO Output Frequency
VCO Output Frequency
350
490/585
MHz
MHz min/max
VCO Frequency Range
VCO Sensitivity
1.2
12
Ratio
MHz/V typ
400
6
15
−19
−9
−14/−5
±3
1.25/2.5
µs typ
MHz/V typ
kHz typ
dBc typ
dBc typ
dBm typ
dB typ
V min/max
−116
−138
−144
−148
−172
−163
−147
−92
0.3
−70
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
Degrees typ
dBc typ
−44
dBm typ
Lock Time6
Frequency Pushing (Open Loop)
Frequency Pulling (Open Loop)
Harmonic Content (Second)
Harmonic Content (Third)
Output Power5, 7
Output Power Variation
VCO Tuning Range
NOISE CHARACTERISTIC5
VCO Phase-Noise Performance8
Synthesizer Phase-Noise Floor9
In-Band Phase Noise10, 11
RMS Integrated Phase Error12
Spurious Signals due to PFD Frequency11, 13
Level of Unlocked Signal with
MTLD Enabled
L1, L2 = 13 nH. See the Choosing the Correct Inductance Value
section for other frequency values.
FMAX/FMIN
L1, L2 = 13 nH. See the Choosing the Correct Inductance Value
section for other sensitivity values.
To within 10 Hz of final frequency.
Into 2.00 VSWR load.
Programmable in 3 dB steps. See Table 7.
For tuned loads, see Output Matching section.
At 100 kHz offset from carrier.
At 1 MHz offset from carrier.
At 3 MHz offset from carrier.
At 10 MHz offset from carrier.
At 25 kHz PFD frequency.
At 200 kHz PFD frequency.
At 8 MHz PFD frequency.
At 1 kHz offset from carrier.
100 Hz to 100 kHz.
Operating temperature range is –40°C to +85°C.
Guaranteed by design. Sample tested to ensure compliance.
3
ICP is internally modified to maintain constant loop gain over the frequency range.
4
TA = 25°C; AVDD = DVDD = VVCO = 3.3 V; P = 32.
5
Unless otherwise stated, these characteristics are guaranteed for VCO core power = 5 mA. L1, L2 = 13 nH, 470 Ω resistors to GND in parallel with L1, L2.
6
Jumping from 490 MHz to 585 MHz. PFD frequency = 200 kHz; loop bandwidth = 10 kHz.
7
Using 50 Ω resistors to VVCO, into a 50 Ω load. For tuned loads, see the Output Matching section.
8
The noise of the VCO is measured in open-loop conditions.
9
The synthesizer phase-noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log N (where N is the N divider value).
10
The phase noise is measured with the EV-ADF4360-7EB1Z Evaluation Board and the HP 8562E Spectrum Analyzer. The Spectrum Analyzer provides the REFIN for the
synthesizer; offset frequency = 1 kHz.
11
fREFIN = 10 MHz; fPFD = 200 kHz; N = 2500; loop B/W = 10 kHz.
12
fREFIN = 10 MHz; fPFD = 1 MHz; N = 500; loop B/W = 25 kHz.
13
The spurious signals are measured with the EV-ADF4360-7EB1Z Evaluation Board and the HP 8562E Spectrum Analyzer. The Spectrum Analyzer provides the REFIN for
the synthesizer; fREFOUT = 10 MHz at 0 dBm.
1
2
Rev. F | Page 4 of 25
Data Sheet
ADF4360-7
TIMING CHARACTERISTICS1
AVDD = DVDD = VVCO = 3.3 V ± 10%; AGND = DGND = 0 V; 1.8 V and 3 V logic levels used; TA = TMIN to TMAX, unless otherwise noted.
Table 2.
Parameter
t1
t2
t3
t4
t5
t6
t7
Unit
ns min
ns min
ns min
ns min
ns min
ns min
ns min
Test Conditions/Comments
LE Setup Time
DATA to CLOCK Setup Time
DATA to CLOCK Hold Time
CLOCK High Duration
CLOCK Low Duration
CLOCK to LE Setup Time
LE Pulse Width
Refer to the Power-Up section for the recommended power-up procedure for this device.
t4
t5
CLOCK
t2
DATA
DB23 (MSB)
t3
DB22
DB2
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t7
LE
t1
t6
04441-002
1
Limit at TMIN to TMAX (B Version)
20
10
10
25
25
10
20
LE
Figure 2. Timing Diagram
Rev. F | Page 5 of 25
ADF4360-7
Data Sheet
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
AVDD to GND1
AVDD to DVDD
VVCO to GND
VVCO to AVDD
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REFIN to GND
Operating Temperature
Maximum Junction Temperature
CSP θJA Thermal Impedance
Paddle Soldered
Paddle Not Soldered
Peak Soldering Reflow Temperature
1
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
150°C
50°C/W
88°C/W
260°C
Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
This device is a high performance RF integrated circuit with an
ESD rating of
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