ADP1196ACBZ-02-R7

5 V, 3 A Logic Controlled High-Side or Low-Side Load Switch ADP1196 Data Sheet TYPICAL APPLICATIONS CIRCUITS Low RDSON of 10 mΩ in 6-ball WLCSP Wide input voltage range: 0 V to 5.5 V 3 A continuous operating current at 70°C Bias supply voltage range: 1.83 V to 5.5 V Low 26 µA ground (quiescent) current, VIN ≤ 3.4 V Low 50 µA quiescent current, VIN = 5.5 V Overtemperature protection circuitry Low shutdown current: 1.2 V or VVB_EN = 1.83 V to 5.5 V, VIN = 0.045 V to VVB_EN 0.0 V < VIN < 5.5 V, VVB_EN ≥ 1.83 V See Figure 3 VIN = 0 V to 5.5 V, VVB_EN ≥ 1.83 V, CLOAD = 1 μF See Figure 3 VIN = 0 V to 5.5 V, VVB_EN ≥ 1.83 V, CLOAD = 1 μF, ILOAD=10 mA Shutdown Current IOFF Continuous Operating Current1 IOUT VIN TO VOUT RESISTANCE VOUT TURN-ON TIME Turn-On Time VOUT TURN-OFF TIME Turn-Off Time THERMAL SHUTDOWN Thermal Shutdown Threshold Thermal Shutdown Hysteresis 1 Symbol VIN VVB_EN RDSON tON tOFF_TIME TSSD TSSD-HYS Min 0 1.83 Typ Max 5.5 5.5 Unit V V 1.83 V V V V MΩ 1.6 1.2 0.4 4 TJ rising 26 26 35 50 3.5 60 60 80 50 3 μA μA μA μA μA μA A 0.01 0.015 Ω 5.5 10 ms 150 800 μsec 125 15 °C °C At an ambient temperature of 85°C, the part can withstand a continuous current of ±2.22 A. At a load current of 3 A, the operational lifetime derates to 2190 hours. TIMING DIAGRAM VEN TURN-ON VOUT 11260-004 90% TURN-OFF 10% Figure 3. Timing Diagram Rev. B | Page 3 of 12 ADP1196 Data Sheet ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 2. Parameter VIN to GND VOUT to GND VB_EN to GND Continuous Drain Current TA = 25°C TA = 85°C Continuous Diode Current Storage Temperature Range Operating Junction Temperature Range Soldering Conditions Rating −0.3 V to +6.5 V −0.3 V to VIN −0.3 V to +6.5 V Table 3. Typical θJA and ΨJB Values ±4 A ±2.22 A −50 mA −65°C to +150°C −40°C to +105°C JEDEC J-STD-020 ESD CAUTION Package Type 6-Ball, 0.5 mm Pitch WLCSP Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Rev. B | Page 4 of 12 θJA 260 ΨJB 58 Unit °C/W Data Sheet ADP1196 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS BALL A1 INDICATOR 1 2 VIN VOUT VIN VOUT A B VB_EN GND TOP VIEW (BALL SIDE DOWN) Not to Scale 11260-003 C Figure 4. Pin Configuration Table 4. Pin Function Descriptions Pin No. A1, B1 A2, B2 C1 C2 Mnemonic VIN VOUT VB_EN GND Description Input Voltage. Output Voltage. Enable/Bias Input. Drive VB_EN high to turn on the switch, and drive VB_EN low to turn off the switch. Ground. Rev. B | Page 5 of 12 ADP1196 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS VIN = 1.8 V, VVB_EN = 1.83 V, CIN = COUT = 1 µF, TA = 25°C, unless otherwise noted. 0.050 0.016 VIN = 0.2V VIN = 1V VIN = 3V VIN = 5.5V 0.014 IOUT = 50mA IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000mA IOUT = 3000mA 0.045 0.040 0.012 DIFFERENCE (V) RDSON (Ω) 0.035 0.010 0.008 0.006 0.030 0.025 0.020 0.015 0.004 0.010 0.002 0 10 20 30 40 50 60 70 80 90 TEMPERATURE (°C) 0 11260-005 0 –40 –30 –20 –10 Figure 5. RDSON vs. Temperature, 50 mA, Different Input Voltages (VIN) 0 50 45 40 GROUND CURRENT (µA) RDSON (Ω) 0.010 0.008 0.006 0.004 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Figure 8. Voltage Drop vs. Input Voltage (VIN), Different Load Currents VIN = 0.2V VIN = 1V VIN = 3V VIN = 5.5V 0.012 1.0 INPUT VOLTAGE (V) 0.016 0.014 0.5 11260-008 0.005 IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000mA IOUT = 3000mA 35 30 25 20 15 10 0.002 10 20 30 40 50 60 70 80 90 TEMPERATURE (°C) 50 45 GROUND CURRENT (µA) 40 0.015 0.010 55 85 115 IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000mA IOUT = 3000mA 35 30 25 20 15 10 0.005 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 INPUT VOLTAGE (V) Figure 7. RDSON vs. Input Voltage (VIN), Different Load Currents 0 –40 –5 25 55 TEMPERATURE (°C) 85 115 11260-010 5 11260-007 RDSON (Ω) 25 TEMPERATURE (°C) IOUT = 50mA IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000mA IOUT = 3000mA 0.020 –5 Figure 9. Ground Current vs. Temperature, Different Load Currents, VIN = 1.8 V Figure 6. RDSON vs. Temperature, 3 A, Different Input Voltages (VIN) 0.025 0 –40 11260-006 0 11260-009 5 0 –40 –30 –20 –10 Figure 10. Ground Current vs. Temperature, Different Load Currents, VIN = 3.6 V Rev. B | Page 6 of 12 Data Sheet 90 GROUND CURRENT (µA) 80 20 IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000mA IOUT = 3000mA SHUTDOWN CURRENT (µA) 100 ADP1196 70 60 50 40 30 VIN = 0.2V VIN = 0.3V VIN = 0.4V VIN = 0.5V VIN = 1.0V VIN = 2.0V VIN = 3.0V VIN = 4.0V VIN = 5.0V VIN = 5.5V 16 12 8 4 20 25 –5 55 85 115 TEMPERATURE (°C) 0 –40 11260-011 0 –40 90 GROUND CURRENT (µA) 80 70 60 0 20 60 40 80 100 TEMPERATURE (°C) Figure 11. Ground Current vs. Temperature, Different Load Currents, VIN = 5 V 100 –20 11260-014 10 Figure 14. Shutdown Current vs. Temperature, VOUT = 0 V, Different Input Voltages (VIN) T VIN = 0.2V VIN = 0.3V VIN = 0.4V VIN = 0.5V VIN = 1.0V VIN = 2.0V VIN = 3.0V VIN = 4.0V VIN = 5.0V VIN = 5.5V ENABLE 2 INPUT CURRENT 1 50 VOUT 40 30 20 10 10000 1000 LOAD CURRENT (mA) CH1 20mAΩ BW CH3 500mV BW Figure 12. Ground Current vs. Load Current, Different Input Voltages (VIN) 8 VIN = 0.2V VIN = 0.3V VIN = 0.4V VIN = 0.5V VIN = 1.0V BW M1ms T 10.6% A CH2 1.18V Figure 15. Typical Turn-On Time and Inrush Current, VIN = 1.8 V, COUT = 47 μF, 330 Ω Load VIN = 2.0V VIN = 3.0V VIN = 4.0V VIN = 5.0V VIN = 5.5V T 2 ENABLE 6 INPUT CURRENT 1 VOUT 4 2 3 –20 0 20 40 60 80 TEMPERATURE (°C) 100 CH1 50mAΩ BW CH3 500mV BW Figure 13. Shutdown Current vs. Temperature, Different Input Voltages (VIN), VOUT Open CH2 1V BW M1ms T 10.6% A CH2 1.18V Figure 16. Typical Turn-On Time and Inrush Current, VIN = 1.8 V, COUT = 100 μF, 330 Ω Load Rev. B | Page 7 of 12 11260-016 0 –40 11260-013 SHUTDOWN CURRENT (µA) 10 CH2 1V 11260-015 100 11260-012 3 0 10 ADP1196 Data Sheet T T 2 2 ENABLE ENABLE INPUT CURRENT INPUT CURRENT 1 1 VOUT VOUT 3 BW M1ms T 10.6% A CH2 1.18V 3 CH1 20mAΩ BW CH3 2V BW Figure 17. Typical Turn-On Time and Inrush Current, VIN = 3.3 V, COUT = 47 μF, 330 Ω Load CH2 1V BW M1ms T 10.6% A CH2 1.18V 11260-019 CH2 1V 11260-017 CH1 20mAΩ BW CH3 1V BW Figure 19. Typical Turn-On Time and Inrush Current, VIN = 5 V, COUT = 47 μF, 330 Ω Load T T 2 2 ENABLE ENABLE INPUT CURRENT INPUT CURRENT 1 1 VOUT VOUT CH2 1V BW M1ms T 10.6% A CH2 1.18V 11260-018 CH1 50mAΩ BW CH3 1V BW CH1 50mAΩ BW CH3 2V BW CH2 1V BW M1ms T 10.6% A CH2 1.18V Figure 20. Typical Turn-On Time and Inrush Current, VIN = 5 V, COUT = 100 μF, 330 Ω Load Figure 18. Typical Turn-On Time and Inrush Current, VIN = 3.3 V, COUT = 100 μF, 330 Ω Load Rev. B | Page 8 of 12 11260-020 3 3 Data Sheet ADP1196 THEORY OF OPERATION VIN VOUT VIN VOUT The ADP1196 supports 3 A of continuous current as long as TA is less than or equal to 70°C. At 85°C, the derated load current falls to ±2.22 A. The overtemperature protection circuit is activated if the load current causes the junction temperature to exceed 125°C. When this occurs, the overtemperature protection circuitry disables the output until the junction temperature falls below approximately 110°C, at which point the output is reenabled. If the fault condition persists, the output cycles off and on until the fault is removed. GND SUPPLY SWITCH ENABLE LOGIC CHARGE PUMP, OVERCURRENT, AND SLEW RATE CONTROL OVERTEMPERATURE PROTECTION 11260-021 VB_EN Figure 21. Functional Block Diagram The ADP1196 is a high-side or low-side N-channel metal oxide semiconductor (NMOS) load switch that is controlled by an internal charge pump. The ADP1196 operates with voltages from 1.83 V to 5.5 V on either VIN or VB_EN. ESD protection structures are shown in the block diagram as Zener diodes (see Figure 21). The ADP1196 is a low quiescent current device with a nominal 4 MΩ pull-down resistor on its enable pin (VB_EN). The package is a space-saving 1.0 mm × 1.5 mm, 6-ball WLCSP. Internal circuitry monitors the VIN and VB_EN pins, connecting the internal power supply to the higher of the two voltages. This operation allows the NMOS load switch to operate on the low side of a particular load. An internal charge pump biases the NMOS switch to achieve a relatively constant, ultralow on resistance of 10 mΩ across the entire supply range. The use of the internal charge pump also allows for controlled turn-on times. Turning the NMOS switch on and off is controlled by the enable input, VB_EN, which can interface directly with 1.83 V logic signals when VIN is greater than 1.8 V. Rev. B | Page 9 of 12 ADP1196 Data Sheet APPLICATIONS INFORMATION CAPACITOR SELECTION ENABLE FEATURE Output Capacitor The ADP1196 uses the VB_EN pin to enable and disable the VOUT pin under normal operating conditions. As shown in Figure 23, when a rising voltage (VVB_EN) on the VB_EN pin crosses the active threshold, VOUT turns on. When a falling voltage (VVB_EN) on the VB_EN pin crosses the inactive threshold, VOUT turns off. The ADP1196 is designed for operation with small, spacesaving ceramic capacitors; however, it functions with most commonly used capacitors when the effective series resistance (ESR) value is carefully considered. The ESR of the output capacitor affects the response to load transients. Use a typical 1 µF capacitor with an ESR of 0.1 Ω or less for good transient response. Using a larger value of output capacitance improves the transient response to large changes in load current. 4.0 VOUT AT 3.6V 3.5 3.0 Input Bypass Capacitor 2.5 VOUT (V) Connecting at least 1 µF of capacitance from VIN to GND reduces the circuit sensitivity to the PCB layout, especially when high source impedance or long input traces are encountered. When greater than 1 µF of output capacitance is required, increase the input capacitor to match it. 1.0 IOUT = 50mA IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000mA IOUT = 3000mA GROUND CURRENT (µA) 80 70 0 0 0.2 0.6 0.4 0.8 1.0 1.2 ENABLE VOLTAGE (V) 11260-023 0.5 The major source of ground current in the ADP1196 is the internal charge pump for the field effect transistor (FET) drive circuitry. Figure 22 shows the typical ground current when VVB_EN = 1.83 V and VIN varies from 0.2 V to 5.5 V. 90 VVB_EN RISING 1.5 GROUND CURRENT 100 VVB_EN FALLING 2.0 Figure 23. Typical VB_EN Operation As shown in Figure 23, the VB_EN pin has hysteresis built into it. This built-in hysteresis prevents on/off oscillations that can occur due to noise on the VB_EN pin as it passes through the threshold points. The VB_EN pin active/inactive thresholds derive from the VIN voltage; therefore, these thresholds vary with changing input voltages. Figure 24 shows the typical VB_EN active/inactive threshold when the input voltage varies from 1.83 V to 5.5 V. 60 50 40 1.2 30 VVB_EN RISE VVB_EN FALL 20 1.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 INPUT VOLTAGE (V) 4.0 4.5 5.0 5.5 Figure 22. Ground Current vs. Input Voltage, Different Load Currents 0.8 0.6 0.4 0.2 0 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 INPUT VOLTAGE (V) Figure 24. Typical VB_EN Threshold vs. Input Voltage (VIN) Rev. B | Page 10 of 12 11260-024 0 VB_EN THRESHOLD (V) 0 11260-122 10 Data Sheet ADP1196 TIMING Turn-on delay is defined as the interval between the time that VVB_EN exceeds the rising threshold voltage and when VOUT rises to ~10% of its final value. The ADP1196 includes circuitry that has a typical 2 ms turn-on delay and a controlled rise time to limit the VIN inrush current. As shown in Figure 25 and Figure 26, the turn-on delay is nearly independent of the input voltage. The turn-off time is defined as the time it takes for the output voltage to fall from 90% to 10% of VOUT. It is also dependent on the RC time constant of the output capacitance and load resistance. Figure 27 shows the typical turn-off times with VIN = 1.8 V, VIN = 3.3 V, and VIN = 5.0 V, COUT = 47 μF, and RLOAD = 330 Ω. 6.0 VVB_EN VIN = 5.0V VIN = 3.3V VIN = 1.8V 5.0 T VOUT (V) 4.0 2 ENABLE 3.0 INPUT CURRENT 2.0 1 VOUT 0 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 TIME (SEC) 3 CH2 1V BW M1ms T 10.6% A CH2 1.18V Figure 27. Typical Turn-Off Time, VIN = 1.8 , VIN = 3.3 V, and VIN = 5.0 V, COUT = 47 μF, RLOAD = 330 Ω 11260-025 CH1 20mAΩ BW CH3 500mV BW THERMAL OVERLOAD PROTECTION Figure 25. Typical Turn-On Time and Inrush Current, VIN = 1.8 V, COUT = 47 μF, 330 Ω Load Thermal overload protection is included, which limits the junction temperature to a maximum of 125°C (typical). Under extreme conditions (that is, high ambient temperature and/or high power dissipation), when the junction temperature starts to rise above 125°C, the output is turned off, reducing the output current to zero. When the junction temperature falls below 110°C, the output is turned on again, and output current is restored to its operating value. T 2 ENABLE INPUT CURRENT If the self-heating of the junction is great enough to cause its temperature to rise above 125°C, thermal shutdown is activated, turning off the output and reducing the output current to zero. As the junction temperature cools and falls below 110°C, the output turns on and conducts current into the load, again causing the junction temperature to rise above 125°C. This thermal oscillation between 110°C and 125°C causes a current oscillation between the load current and 0 mA that continues as long as the load remains connected to the output. 1 CH1 20mAΩ BW CH3 2V BW CH2 1V BW M1ms T 10.6% A CH2 1.18V 11260-026 VOUT 3 0.08 0.09 0.10 11260-027 1.0 Figure 26. Typical Turn-On Time and Inrush Current, VIN = 5 V, COUT = 47 μF, 330 Ω Load The rise time is defined as the time it takes the output voltage (VOUT) to rise from 10% to 90% of its final value. The output voltage rise time is dependent on the rise time of the internal charge pump. The thermal limit protection is intended to protect the device against accidental overload conditions. For reliable operation, device power dissipation must be externally limited so that the junction temperature does not exceed 125°C. For very large values of output capacitance, the RC time constant (where C is the load capacitance (CLOAD) and R is the RDSON||RLOAD) can become a factor in the rise time of the output voltage. Because RDSON is much smaller than RLOAD, an adequate approximation for RC is RDSON × CLOAD. An input or load capacitor is not required for the ADP1196, although capacitors can be used to suppress noise on the board. Rev. B | Page 11 of 12 ADP1196 Data Sheet OUTLINE DIMENSIONS 1.000 0.950 0.900 2 1 A BALL A1 IDENTIFIER 1.500 1.450 1.400 1.00 REF C 0.50 BSC TOP VIEW (BALL SIDE DOWN) 0.675 0.595 0.515 B 0.50 BSC BOTTOM VIEW 0.380 0.355 0.330 SIDE VIEW (BALL SIDE UP) 0.345 0.295 0.245 SEATING PLANE 0.270 0.240 0.210 11-08-2012-B COPLANARITY 0.075 Figure 28. 6-Ball Wafer Level Chip Scale Package [WLCSP] (CB-6-2) Dimensions shown in millimeters ORDERING GUIDE Model1 ADP1196ACBZ-02-R7 1 Temperature Range −40°C to +85°C Package Description 6-Ball Wafer Level Chip Scale Package [WLCSP] Z = RoHS Compliant Part. ©2013–2014 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D11260-0-4/14(B) Rev. B | Page 12 of 12 Package Option CB-6-2 Branding CK