LT1226
Low Noise Very High Speed
Operational Amplifier
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DESCRIPTIO
FEATURES
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Gain of 25 Stable
1GHz Gain Bandwidth
400V/µs Slew Rate
2.6nV/√Hz Input Noise Voltage
50V/mV Minimum DC Gain, RL = 500Ω
1mV Maximum Input Offset Voltage
±12V Minimum Output Swing into 500Ω
Wide Supply Range ±2.5V to ±15V
7mA Supply Current
100ns Settling Time to 0.1%, 10V Step
Drives All Capacitive Loads
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APPLICATI
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Wideband Amplifiers
Buffers
Active Filters
Video and RF Amplification
Cable Drivers
Data Acquisition Systems
The LT1226 is a member of a family of fast, high performance amplifiers that employ Linear Technology
Corporation’s advanced bipolar complementary
processing.
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The LT1226 is a low noise, very high speed operational
amplifier with excellent DC performance. The LT1226
features low input offset voltage and high DC gain. The
circuit is a single gain stage with outstanding settling
characteristics. The fast settling time makes the circuit an
ideal choice for data acquisition systems. The output is
capable of driving a 500Ω load to ±12V with ±15V supplies
and a 150Ω load to ±3V on ±5V supplies. The circuit is also
capable of driving large capacitive loads which makes it
useful in buffer or cable driver applications.
TYPICAL APPLICATI
Photodiode Preamplifier, AV = 5.1kΩ, BW = 15MHz
Gain of +25 Pulse Response
V+
+
LT1226
51Ω
–
5.1k
51Ω
LT1226 TA01
LT1226 TA02
1
LT1226
PACKAGE/ORDER I FOR ATIO
U
W W
W
Total Supply Voltage (V+ to V –) ............................... 36V
Differential Input Voltage ......................................... ±6V
Input Voltage ............................................................±VS
Output Short Circuit Duration (Note 1) ............ Indefinite
Operating Temperature Range
LT1226C ................................................ 0°C to 70°C
Maximum Junction Temperature
Plastic Package .............................................. 150°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec.)................. 300°C
ELECTRICAL CHARACTERISTICS
U
RATI GS
W
AXI U
U
ABSOLUTE
ORDER PART
NUMBER
TOP VIEW
NULL
1
8
NULL
–IN
2
7
V+
+IN
3
6
OUT
V–
4
5
NC
LT1226CN8
LT1226CS8
S8 PART MARKING
N8 PACKAGE
S8 PACKAGE
8-LEAD PLASTIC DIP 8-LEAD PLASTIC SOIC
1226
LT1226 PO01
VS = ±15V, TA = 25°C, VCM = 0V unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
VOS
Input Offset Voltage
(Note 2)
IOS
Input Offset Current
IB
Input Bias Current
en
Input Noise Voltage
f = 10kHz
in
Input Noise Current
f = 10kHz
RIN
Input Resistance
VCM = ±12V
Differential
CIN
Input Capacitance
Input Voltage Range +
MIN
TYP
MAX
UNITS
0.3
1.0
mV
100
400
nA
4
8
µA
2.6
nV/√Hz
1.5
pA/√Hz
24
40
15
MΩ
kΩ
2
pF
12
14
V
Input Voltage Range –
– 13
– 12
V
CMRR
Common-Mode Rejection Ratio
VCM = ±12V
94
103
dB
PSRR
Power Supply Rejection Ratio
VS = ±5V to ±15V
94
110
dB
AVOL
Large Signal Voltage Gain
VOUT = ±10V, RL = 500Ω
50
150
V/mV
VOUT
Output Swing
RL = 500Ω
12.0
13.3
±V
IOUT
Output Current
VOUT = ±12V
24
40
mA
SR
Slew Rate
(Note 3)
250
400
V/µs
Full Power Bandwidth
10V Peak, (Note 4)
6.4
MHz
GBW
Gain Bandwidth
f = 1MHz
1
GHz
tr, tf
Rise Time, Fall Time
AVCL = + 25,10% to 90%, 0.1V
5.5
Overshoot
AVCL = +25, 0.1V
35
%
Propagation Delay
50% VIN to 50% VOUT
5.5
ns
Settling Time
10V Step, 0.1%, AV = – 25
100
ns
Differential Gain
f = 3.58MHz, AV = +25, RL = 150Ω
0.7
%
Differential Phase
f = 3.58MHz, AV = +25, RL = 150Ω
0.6
Deg
RO
Output Resistance
AVCL = +25, f = 1MHz
3.1
IS
Supply Current
ts
2
7
ns
Ω
9
mA
LT1226
ELECTRICAL CHARACTERISTICS VS = ±5V, TA = 25°C, VCM = 0V unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
VOS
Input Offset Voltage
(Note 2)
IOS
Input Offset Current
IB
Input Bias Current
MIN
Input Voltage Range +
2.5
Input Voltage Range –
TYP
MAX
1.0
1.4
mV
100
400
nA
4
8
µA
4
UNITS
V
–3
–2.5
V
CMRR
Common-Mode Rejection Ratio
VCM = ±2.5V
94
103
dB
AVOL
Large Signal Voltage Gain
VOUT = ±2.5V, RL = 500Ω
VOUT = ±2.5V, RL = 150Ω
50
100
75
V/mV
V/mV
VOUT
Output Voltage
RL = 500Ω
RL = 150Ω
3.0
3.0
3.7
3.3
±V
±V
IOUT
Output Current
VOUT = ±3V
20
40
mA
SR
Slew Rate
(Note 3)
250
V/µs
Full Power Bandwidth
3V Peak, (Note 4)
13.3
MHz
GBW
Gain Bandwidth
f = 1MHz
700
MHz
tr, tf
Rise Time, Fall Time
AVCL = +25, 10% to 90%, 0.1V
8
ns
Overshoot
AVCL = +25, 0.1V
25
%
Propagation Delay
50% VIN to 50% VOUT
8
ns
ts
Settling Time
– 2.5V to 2.5V, 0.1%, AV = – 24
IS
Supply Current
60
ns
7
ELECTRICAL CHARACTERISTICS
9
mA
0°C ≤ TA ≤ 70°C, VCM = 0V unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
VOS
Input Offset Voltage
VS = ±15V, (Note 2)
VS = ± 5V, (Note 2)
MIN
Input VOS Drift
TYP
MAX
0.3
1.0
1.3
1.8
UNITS
mV
mV
µV/°C
6
IOS
Input Offset Current
VS = ±15V and VS = ± 5V
100
600
nA
IB
Input Bias Current
4
9
µA
CMRR
Common-Mode Rejection Ratio
VS = ±15V and VS = ± 5V
VS = ±15V, VCM = ±12V and VS = ± 5V, VCM = ± 2.5V
92
103
dB
PSRR
Power Supply Rejection Ratio
VS = ±5V to ±15V
92
110
dB
AVOL
Large Signal Voltage Gain
VS = ±15V, VOUT = ±10V, RL = 500Ω
VS = ±5V, VOUT = ±2.5V, RL = 500Ω
35
35
150
100
V/mV
V/mV
VOUT
Output Swing
VS = ±15V, RL = 500Ω
VS = ±5V, RL = 500Ω or 150Ω
12.0
3.0
13.3
3.3
±V
±V
IOUT
Output Current
VS = ±15V, VOUT = ±12V
VS = ±5V, VOUT = ±3V
24
20
40
40
mA
mA
SR
Slew Rate
VS = ±15V, (Note 3)
250
IS
Supply Current
VS = ±15V and VS = ± 5V
Note 1: A heat sink may be required to keep the junction temperature
below absolute maximum when the output is shorted indefinitely.
Note 2: Input offset voltage is tested with automated test equipment
in